CMOS FULL Search Results

27D014

Contextual Info: HM-92570 H A R R IS SEMICONDUCTOR 256K Buffered Synchronous CMOS RAM Module January 1992 Features Description • The HM-92570 is a fully buffered 256K bit CMOS RAM Module con­ sisting of sixteen HM-6516 2K x 8 CMOS RAMs, two 82C82 CMOS octal latching bus drivers, and two HCT-138 CMOS 3:8 decoders in

Contextual Info: CD4504BT Data Sheet July 1999 File Number 4623.1 Features CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation • QM L Class T, Per MIL-PRF-38535 • Radiation Performance Harris’ Satellite Applications Flow SAF devices are fully

Contextual Info: CD4504BT Semiconductor January 1999 Data Sheet CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation File Number Features • QM L Class T, Per MIL-PRF-38535 • Radiation Performance Harris’ Satellite Applications Flow SAF devices are fully

CD82C85

Abstract: 80C86 80C88 82C85 CS82C85 ID82C85 IS82C85 74HCxx logic table
Contextual Info: 82C85 CMOS Static Clock Controller/Generator March 1997 Features Description • Generates the System Clock For CMOS or NMOS Microprocessors and Peripherals The Intersil 82C85 Static CMOS Clock Controller/Generator provides complete control of static CMOS system operating modes and supports full speed, slow, stop-clock and

level shifter from TTL to CMOS

Abstract: level shifter . CMOS to TTL CD4504BDTR CD4504BKTR voltage level shifter 6kaa CD4504 hex to bin ttl CDFP4-16 "Level Shifter"
Contextual Info: CD4504BT Data Sheet July 1999 CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation File Number 4623.1 Features • QML Class T, Per MIL-PRF-38535 Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML

d 65632

Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Contextual Info: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products

Contextual Info: FMP3217CCx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Dec. 10th, 2007 1 Revision 0.0 Dec. 2007 FMP3217CCx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM

Contextual Info: FMP3217CAx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Oct,17th, 2007 1 Revision 0.0 Oct. 2007 FMP3217CAx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM

KM616FS2000

Abstract: 960i
Contextual Info: Preliminary CMOS SRAM KM616FU2000, KM616FS2000, KM616FR2000 Family 128Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM616FU2000, KM616FS2000 and KM616FR2000 • Organization : 128K x 16

VSON008X2030

Abstract: U6652
Contextual Info: CMOS LDO Regulator Series for Portable Equipments High-speed Load Response Full CMOS LDP Regulators BU6650NUX, BU6651NUX, BU6652NUX, BU6653NUX No.09020EBT06 ●Description BU6650NUX, BU6651NUX, BU6652NUX, BU6653NUX are high-performance 3ch FULL CMOS regulator with 200-mA

Contextual Info: Preliminary KM68FU1000, KM68FS1000, KM68FR1000 Family CMOS SRAM 128Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION Process Technology : 0.4 um Full CMOS The KM68FU1000, KM68FS1000 and KM68FR1000 Organization : 128K x 8

Contextual Info: Preliminary KM68FV2000, KM68FS2000. KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION Process Technology : 0.4 um Full CMOS The KM68FV2000, KM68FS2000 and KM68FR2000 Organization : 256K x 8

Contextual Info: Datasheet CMOS LDO Regulator for Portable Equipments High Ripple Rejection, Low Current Consumption, Versatile Package FULL CMOS LDO Regulator 500mA BUXXTH5WNVX General Description Key Specifications      BUXXTH5WNVX is high-performance FULL CMOS

pal 007a

Abstract: PAL 006A pal 005a pal 003a DIAGRAM pal 005a PAL24V10 Pal programming PALCE24V10 12197-013a
Contextual Info: COM’L PALCE24V1 OH-15/25 Advanced Micro Devices EE CMOS 28-Pin Universal Programmable Array Logic D ISTINCTIVE CHARACTERISTICS • ■ Electrically erasable CMOS technology provides reconf igurable logic and full testability High speed CMOS technology -

Contextual Info: Datasheet CMOS LDO Regulator for Portable Equipments High Ripple Rejection, Low Current Consumption, Versatile Package FULL CMOS LDO Regulator 2.85V / 500mA BU2JTH5WNVX General Description Key Specifications „ „ „ „ „ BU2JTH5WNVX is high-performance FULL CMOS

Contextual Info: COM’L: H-15/25 Advanced Micro Devices PALCE24V1 OH-15/25 EE CMOS 28-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Electrically erasable CMOS technology provides reconfigurable logic and full testability ■ High speed CMOS technology

Contextual Info: Preliminary KM68FU2000, KM68FS2000, KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FU2000, KM68FS2000 and KM68FR2000 • Organization : 256K x 8

Contextual Info: FINAL COM’L: H-15/25 Lattice/Vantis PALCE24V1 OH-15/25 EE CMOS 28-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Electrically erasable CMOS technology provides reconfigurable logic and full testability ■ High speed CMOS technology

5LEC

Contextual Info: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS • Organization : 64K x 16 The KM616FV1000, KM616FS1000 and KM616FR1000 • Power Supply Voltage

44TSOP2

Contextual Info: KM616FV1000, KM616FS1000, KM616FR1000 Famtly CMOS SRAM 64Kx16 bit Super Low Power and Low Voltage Futt CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm Full CMOS • Organization : 64Kx16 bit . Power Supply Voltage KM616FV100Q Family : 3.0V - 3.6V

cs x1 3001 h 05

Abstract: cs X1 3001
Contextual Info: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM 64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION FEATURES • Process Technology : Full CMOS • Organization : 64Kx16 bit • Power Supply Voltage KM 616FV1000 Family : 3.0V ~ 3.6V

Flashrite

Abstract: amd EPROM Am27C4096 amd pin out EPROM AMD
Contextual Info: PROGRAMMING AMD’s CMOS EPROMs PROGRAMMING AMD’s CMOS EPROMs This section contains information on programming AMD CMOS EPROM devices, using AMD’s fast Flashrite programming algorithm. FLASHRITE PROGRAMMING METHODOLOGY AMD EPROMs are shipped from the factory fully

SM-1994

Contextual Info: HY62UF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology

Contextual Info: KM68FV2000, KM68FS2000, KM68FR2000 Family CMOS SRAM 2S6Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : 0.4 miti Full CMOS . Organization : 256Kx8 . Power Supply Voltage The KM68FV2000, KM68FS2000 and KM68FR2000 family is