CM 8600 C Search Results

Contextual Info: RF Radiation Safety Products 8600 SERIES PROBES • Compatible with All 8600 Series Meters • 300 kHz to 40 GHz • Electric and Magnetic Fields • Isotropic Response • RMS Average Detection • Near Field or Far Field Measurements • Calibration Data Supplied

Contextual Info: 8600 SERIES PROBES • Compatible with All 8600 Series Meters • 300 kHz to 40 GHz • Electric and Magnetic Fields • Isotropic Response • RMS Average Detection • Near Field or Far Field Measurements • Calibration Data Supplied APPLICATION These probes are available fo r use as replacements or

cm 8600 c

Contextual Info: 40E D EB □ □ □ 0 cn 4 1 I-3SENI FASCO INDS/ SENISYS CLD71 CLD72 CLD71BB Silicon Planar CLD72BB Photovoltiac Diodes "["-•-ll-'ol Product Data — H .283 0IA . l-«- — .283 DIA. GENERAL DESCRIPTION — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic

DYMEC 8612

Abstract: 8600 Digital Weighing Scale circuit diagram cm 8600
Contextual Info: 8600 Series 5 MHz Voltage to Frequency Converters Models 8610, 8612 BLOCK DIAGRAM OFFSET 10 M I IN 10 K v REF INTEGRATOR R A1 SCHMITT + v S TRIGGER A2 Iav One-Shot F/ F 2.2 K 10 K 10 K 10 K v IN Q Dispenser Q=CV Features: • • • • • • • Guaranteed Minimum /

H928

Abstract: CLD41 CLD41BB CLD42 CLD42BB
Contextual Info: CLD41 CLD42 CLD41BB CLD42BB Silicon Planar Photovoltiac Diodes Product Data G E N E R A L D E SC R IP T IO N — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic characteristics. They are all Silicon PN Planar diodes in herm etic cases for stringent environmental applications. All

CM500

Contextual Info: 0 . 283* 0.005 ù 0 . 248* 0.005 J_ Jm Active Area *Light source is a frosted incandescent lamp @ 2854 C *Measured in an unsaturated condition with IR source resistor of 1KÎ2. OATE DIMENSIONS U StO REVISIONS NO. 13/10/i 2 1 ,1 Spec.Changed v APP'O iL M ILLIM ETER S

CM500

Abstract: IA-100
Contextual Info: I DATE DIMENSIONS USEO i NO. 1 9/10/' 12 REVISIONS BY Spec Changed f : APP'D YL M ILLIM ETERS ✓ INCHES il PROJECTION l»tl> a. _ - r ~ 1 OPTOELECTRONIC CHARACTERISTICS fl T=25 C Parameter Test Condition Max Symbol Min Typ I sc 60 100 UA V Unit 2 Short Circuit

69C1

Abstract: SLD6 CM500 IA-100
Contextual Info: DATE DIMENSIONS USCOj REVISIONS NO. .3/10/9 1 1 I BY Spec Changed APP’ D YL M ILLIM E TE R S J V INCHES PROJECTION USED OPTOELECTRONIC CHARACTERISTICS @ T=25 C Test Condition Parameter Symbol Min Typ Isc 600 950 Short Circuit Current H*=25mw/cm 500 Ftc

nortel accelar 8010

Abstract: NORTEL accelar 8000 38438 ACCELAR 8010 100BASE-FX CFR47 ICES-003 TBA 8010 ACCELAR "Spanning Tree"
Contextual Info: Enterprise Switches Accelar 8000 Family Data Sheet High Availability Operational Simplicity Low Cost of Ownership The Accelar* 8000 enterprise switch is a new platform providing high availability and multi-service integration for LAN and MAN/WAN applications. It leverages

Contextual Info: Submersible Motors & Accessories Catalog Commitment To Quality Franklin Electric is committed to provide customers with defect free products through our program of continuous improvement. Quality shall, in every case, take precedence over quantity. Submersible Motors

NORTEL PASSPORT 8600

Abstract: bcn router bcn bln ag13 BLN 71000 NORTEL PASSPORT MSA cards NORTEL PASSPORT datasheet cards Nortel 8600 cable 13-Slot NEMA-5-15R
Contextual Info: PB3785-A.qxd 10/18/00 4:10 PM Page iii Product Brief Backbone Node Backbone Link Node/Concentrator Node Large networks require a high-performance, scalable routing device capable of delivering all types of data quickly and efficiently, over any network topology,

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

Diode SMD SJ 99

Contextual Info: P h ilip s Sem iconductors Product specification Voltage regulator diodes PMLL5225B to PMLL5267B FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The series consists of 43 types with nominal working

R30D14B

Abstract: SD600N16P R30D14A
Contextual Info: INTERNATIONAL RECTIFIER International U S Rectifier 2LE D' • 43SS455 G01013Q 4 ■ "T“ ô | - 2 . 3 Rectifiers \ - Standard Recovery 290-600 Amps Part Number VRRM V R30D4A R30D4B R30D6A R30D6B R30D8A R30D8B R30D10A R30D10B R30D12A R30D12B R30D14A R30D14B

SDP8000

Abstract: SEP8506-003 SDP8106 SDP8406 SEP8506
Contextual Info: Datasheet - SEP8506-003 SEP8506-003 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

500 watts audio amplifier diagram

Abstract: general electric
Contextual Info: 5DH8 ET-T1391 Page 1 5DH8 10-56 TRIODE-PENTODE TUBES DESCRIPTION AND RATING The SDH8 is a miniature tube which contains a sharp-cutoff pentode and a high-mu triode in one envelope. The pentode section is intended for use as a video intermediate-frequency amplifier or as an audio intermediate-frequency

Contextual Info: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: riadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q

W-band diode

Abstract: MA4AGBPL912 Microwave PIN diode MA4AGBLP912 beam lead pin diode MA4AGBLP912 M541 W-band PIN diode SPICE model pin diode model spice
Contextual Info: MA4AGBLP912 AlGaAs Beam Lead PIN Diode Features n n n n n n n V 1.00 Outline Topview Ultra Low Capacitance < 22 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver

Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

BROWN BOVERI

Abstract: BROWN BOVERI dq4 DQ4a BROWN BOVERI DQ 2 DQ 2 BROWN BOVERI Boveri 400168 07K471 BROWN BOVERI 10 BROWN BOVERI DQ4a
Contextual Info: D Q 4 /D Q 4 a /D Q 4 c/ DQ4d Aktiengesellschaft Brown, Boveri & Cie. Baden/Schweiz Q uecksilberdam pf-Gleichrichter­ röhren HR 90140 D 8 .7 0 -3 0 0 0 Die DQ 4 ist eine Einweg-Quecksilberdampf-Gleichrichterröhre mit Glühkathode. Dank des Quecksilberfüllverfahrens mit «Pillen», anstelle flüssigen Queck­

MA4AGBLP912

Contextual Info: MA4AGBLP912 AlGaAs Beamlead PIN Diode V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ Topside Low Series Resistance Low Capacitance 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant

cm 8600 c smd

Abstract: cm 8600 a smd D 94v-0 SUMIKA mtl d 94v-0 PCB- 94v-0
Contextual Info: SMD POWER INDUCTORS SDB1005 SERIES 1. PART NO. EXPRESSION : SDB1005101MZF a (b) (c) (d)(e)(f) (a) Series code (d) Tolerance code : M = ±20% (b) Dimension code (e) X, Y, Z : Standard part (c) Inductance code : 101 = 100uH (f) F : Lead Free 2. CONFIGURATION & DIMENSIONS :

SEP8506-002

Abstract: SDP8106 SDP8406 SEP8506 infrared emitting diode
Contextual Info: Datasheet - SEP8506-002 SEP8506-002 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

SEP8506-001

Abstract: SDP8106 SDP8406 SEP8506 SDP8000
Contextual Info: Datasheet - SEP8506-001 SEP8506-001 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be