CM 100N Search Results

optical interrupter darlington

Contextual Info: Ê50C0M COMPONENTS ISO-LOGIC SC HMITT TRIGGER INTERRUPTER SWITCH BUFFER O UTPUT CM CO CO 1— Q O CM CO I— C/5 o CM cn If = 20mA 1.5 1.5 1.5 > 10 10 10 o Paramter Units WITHOUT MOUNTING TAB WITH MOUNTING TAB CM Test Conditions z l'­ ai CO 1— cn :z Test Conditions

PIR203

Abstract: LPC1768 NXP LPC2368 XO53050UITA LPC1768 DaC code example pic508 AN11 AN13 LPC1343 LPC2368
Contextual Info: EDP-CM-LPC2368 CPU Module EDP-CM-LPC2368 Command Module User Manual Version 1.01 10th June 2010 Electrocomponents plc Page 1 EDP-CM-LPC2368 CPU Module Contents 1. Introduction 2. 2.1 2.2 2.3 2.4 2.5 MCU Mapping 3 MCU Pin Allocation . 3

PIR204

Abstract: NXP LPC1768 JP4-16 LPC1768FBD100 PIR203 pic508 LPC2368 user manual PIJP20201 JP414 LPC1768
Contextual Info: EDP-CM-LPC1768 CPU Module EDP-CM-LPC1768 Command Module User Manual Version 2.03 10th June 2010 Electrocomponents plc Page 1 EDP-CM-LPC1768 CPU Module Contents 1. Introduction 2. 2.1 2.2 2.3 2.4 2.5 MCU Mapping 3 MCU Pin Allocation . 3

LPC1768 ADC code example

Abstract: LPC1113 EDP-CM-LPC1113 PIC509 LPC1113FBD48 LPC1343 LPC1768 LPC2368 LPC1768 sd card usb controller using LPC1343
Contextual Info: EDP-CM-LPC1113 CPU Module EDP-CM-LPC1113 CPU Module User Manual Version 1.01 10th June 2010 Electrocomponents plc Page 1 EDP-CM-LPC1113 CPU Module Contents 1. Introduction 2. 2.1 2.2 2.3 2.4 2.5 Pin Allocation 4 Allocation of MCU pins to backplane functions . 4

LPC1768 sd card

Abstract: pir203 PIO24 CT32B0 LPC1768 usb controller using LPC1343 LPC1113 LPC1343 LPC1343FBD48 LPC2368
Contextual Info: EDP-CM-LPC1343 Command Module EDP-CM-LPC1343 Command Module User Manual Version 1.02 10th June 2010 Electrocomponents plc Page 1 EDP-CM-LPC1343 Command Module Contents 1. Introduction 2. 2.1 2.2 2.3 2.4 2.5 Pin Allocation 4 Allocation of MCU pins to backplane functions . 4

PAP102

Abstract: JP2-14 PIC32 P601 tyco rd4
Contextual Info: EDP-CM-PIM Adapter Board dsPIC/PIC ‘Command Module’ – Adapter Board EDP-CM-PIC-PIM User Manual Version 1.04 10th June 2010 Electrocomponents plc Page 1 EDP-CM-PIM Adapter Board Contents 1. Introduction 2. 2.1 2.2 2.3 2.4 2.5 MCU Mapping 3 MCU Pin Allocation . 3

mdc z400

Abstract: ARM str912 external memory interface cortex a15 cpu wua1 SSC P7 led B300 B301 STE100P STR912 X300
Contextual Info: EDP-CM-STR9 CPU Module User Manual This document contains information on the STR9 module for the RS EDP system. Version v5, 10/06/2010 EDP-CM-STR9 Manual Contents 1. EDP-CM-STR9 CPU Module 3 2. Get The Latest Versions 3 3. Module Features 4 4. 4.1 4.2 4.3

Contextual Info: HA-2510/12/15 SI h a f r r i s High Slew Rate Operational Amplifiers tn CM in CM Features Applications • High Slew • Data Acquisition Systems • Fast S e ttlin g . 250ns

webcam circuit diagram

Abstract: OV2640FSL KSZ8721BLI OV2640-fsl webcam circuit PF48F2000P0ZBQ0S RJLBC-060TC1 internal webcam circuit diagram webcam connectors SCHEMATIC webcam board
Contextual Info: Hardware User Manual CM-BF527 v2.x Contact Bluetechnix Mechatronische Systeme GmbH Lainzerstraße 162/3 A-1130 Vienna AUSTRIA/EUROPE office@bluetechnix.at http://www.bluetechnix.com Document No.: 100-1251-2.2 Document Revision 1 Date: 2010-06-28 Blackfin CM-BF527 Hardware User Manual

Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array • For high-speed switching applications • Electrical insulated diodes Ordering Code Pin Configuration BAS 28W JTs Q62702-A3466 1 =C1 CM O Marking II CM Type Package 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter

27C010

Abstract: 27C040 27C080 27C256 27C512 NM27C020
Contextual Info: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM 27C020 is a high speed 2 M egabit CM OS UV-EPROM m anufactured on Fairchild’s advanced sub-m icron technology. Utilizing the AM G architecture, this advanced CM OS process

27C020Q

Contextual Info: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM 27C020 is a high speed 2 M egabit CM OS UV-EPROM m anufactured on Fairchild’s advanced sub-m icron technology. Utilizing the AM G architecture, this advanced CM OS process

Contextual Info: 2 Megabit CM OS SRAM Dense-Pac Microsystems. Inc. ^ DPS256S8P/DPS256S8PL/DPS256S8PLL DESCRIPTION: n ie DPS256S8P/PL/PLL is a 256K X 8 higWensity, low-power static RAM module comprised of two 128K X 8 monolithic SRAM's, an advanced high-speed CM O S decoder and decoupling capacitors surface

SHC804BM

Abstract: SHC803BM SHC804 ADC803 SHC803 Burr-Brown shc804bm step up dd 804
Contextual Info: SHC803BM, CM SHC804BM, CM High Speed SAMPLE/HOLD AMPLIFIER error is guaranteed to be within ±1/2LSB for 12-bit systems. Stability over temperature is excellent, with only ±5ppm/°C of gain drift and ±4ppm of FSR/°C of charge offset drift over the –25 to +85°C temperature

Contextual Info: For Im m M e Assistant, Costaci Your L m l Salts/arson SHC803BM, CM SHC804BM, CM IR W -B R O W N 8 1 Ultra-High Speed SAMPLE/HOLD AMPLIFIER FEATURES error is guaranteed to be within ±1/2LSB for 12-bit systems. Stability over temperature is excellent, with

Contextual Info: A £ SEMICONDUCTOR & & Ë g ! H Y 5 lMxi-Bit 1 C 1cmos 0 0dram M131202A-SEP90 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast

ADC803

Abstract: SHC803BM SHC804 SHC804BM
Contextual Info: SHC803BM, CM SHC804BM, CM High Speed SAMPLE/HOLD AMPLIFIER error is guaranteed to be within ±1/2LSB for 12-bit systems. Stability over temperature is excellent, with only ±5ppm/°C of gain drift and ±4ppm of FSR/°C of charge offset drift over the –25 to +85°C temperature

Contextual Info: Dense-Pac Microsystems. Inc. 4 Megabit CM OS SRAM ^ DPS512S8U DESCRIPTION: The DPS512S8U is a 512K X 8 high-density, low-power static RAM module comprised of four 128K X 8 monolithic SRAM's, an advanced high-speed CM O S decoder and decoupling capacitors surface mounted on a ceram ic Thick Film SIP

NE as7

Abstract: G1712
Contextual Info: Ordering number: EN4794B CMOS LSI LC3564S, SS. SM. ST-70/85/10 64K 8192words X 8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CM OS static RAM s w ith an 8192-word X 8-bit organization. These SRAM s are fu ll CM OS type

Contextual Info: W D I EDI8M8256C/LP/P E lectronic Designs Inc.- Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C/LP/P is a 4096K bit CM O S Static RAM based on eight 32Kx8 Static RAMs mounted on a multi-layered ceramic substrate. 256Kx8 bit CM O S Static

MT42C8257

Contextual Info: MT42C8257 256K X 8 VRAM I^IICRON FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance CM O S silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation) • Fully I'l'L and CM O S compatible inputs and TTL

Contextual Info: ,Aj Hyundai ' f i HY531000 S E M IC O N D U C T O R 1 1 S ™ , M171202A-APR91 DESCRIPTION The HY531000 is a high speed, low power 1,048,576X1 bit CM OS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY531000 offers a fast

MN65761T

Contextual Info: Panasonic Other MOS LSIs MN65761T Low Power 9-Bit CM O S A/D Converter for Image Processing • Pin Assignment ■ O verview The M N 65761T is a high-speed 9-bit CM OS analogto-digital converter for image processing applications. It uses a h alf flash structure based on chopper com ­

cxk5864cm

Abstract: CXK5864CP 192-WORD
Contextual Info: SONY CXK5864CP/CM -70LL71 OLL 8,192-word x 8-bit High Speed CMOS Static RAM Description 2o5 CXK5864CP/CM are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8 bits and operates from a single 5V supply. These IC are suitable for use in high speed and low power