CLASS E POWER AMPLIFIER Search Results

Contextual Info: Ordering number : EN*A1595A Thick-Film Hybrid IC STK433-120-E 2-channel class AB audio power IC, 120W+120W Overview The STK433-120-E is a hybrid IC designed to be used in 120W x 2ch class AB audio power amplifiers. Applications • Audio power amplifiers.

Contextual Info: Ordering number : EN*A1476A Thick-Film Hybrid IC STK433-760-E 2-channel class AB audio power IC, 50W+50W Overview The STK433-760-E is a hybrid IC designed to be used in 50W x 50W 2-channel class AB audio power amplifiers. Applications • Audio power amplifiers.

A1488

Abstract: Transistor a1488 stk403-090
Contextual Info: Ordering number : EN*A1488 Thick-Film Hybrid IC STK433-070-E 2-channel class AB audio power IC, 60W+60W Overview The STK433-070-E is a hybrid IC designed to be used in 60W x 2ch class AB audio power amplifiers. Applications • Audio power amplifiers. Features

Contextual Info: LM 48411 LM48411 Ultra-Low EMI, Filterless, 2.5W, Stereo, Class D Audio Power Amplifierwith E2S Texas In s t r u m e n t s Literature Number: SNAS399F & Semiconductor LM 48411 H oom er A udio Power Amplifier Series Ultra-Low EMI, Filterless, 2.5W, Stereo, Class D Audio

Contextual Info: LM 48510 LM48510 Boosted Class D Audio Power Amplifier Texas In s t r u m e n t s Literature Number: SNAS275D a l Semiconductor LM48510 Boom er Audio Power Amplifier Series Boosted Class D Audio Power Am plifier General Description Key Specifications The LM48510 integrates a boost converter with a high effi­

POE-15

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
Contextual Info: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP

Contextual Info: RF3110 Preliminary 2 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Typical Applications • 3V Dual-Band GSM Handsets • GSM, E-GSM and DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible 2 POWER AMPLIFIERS • Portable Battery-Powered Equipment

ASI10530

Abstract: ASI2010 ASI20
Contextual Info: ASI2010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG A The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. ØD B .060 x 45° C HA M F E R C E FEATURES: G L • PG = 5 dB min. at 10 W/ 2,000 MHz

Contextual Info: LM 49200 LM49200 Stereo Class AB Audio Subsystem with a True Ground Headphone Amplifier Texa s In s t r u m e n t s Literature Number: SNAS459 t t i o n LM49200 a l Sem iconductor M ay 21, 2009 B O O m r Audio Power Am plifier Series Stereo Class AB Audio Subsystem with a True Ground

ASI1005

Abstract: ASI10524
Contextual Info: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz

ASI2003

Abstract: TRANSISTOR D 570 ASI10528
Contextual Info: ASI2003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min. at 3 W/ 2,000 MHz

ASI10541

Abstract: ASI4000
Contextual Info: ASI4000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4000 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 0.5 W / 4,000 MHz

ASI1002

Abstract: ASI10523 class E power amplifier
Contextual Info: ASI1002 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 2.0 W / 1,000 MHz

ASI1001

Abstract: ASI10522
Contextual Info: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz

ASI2307

Abstract: ASI10536 9533a k 2057
Contextual Info: ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 7.0 W/2300 MHz

ASI2304

Abstract: ASI10535
Contextual Info: ASI2304 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2304 is Designed for General Purpose Class C Power Amplifier Applications up tp 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 4 W / 2300 MHz

Contextual Info: G C E IM O R P IM O R U A T IV I High Power Class B Output Stage I O M 551 LC551 DATA SHEET FEATURES DESCRIPTION • adjustable gain to 48 dB The LC551 is a 10 pin low voltage, class B artlplitier w hich • capable of driving low impedance receiver 110 Q

ASI3005

Abstract: ASI10540
Contextual Info: ASI3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package

MRA0510-50H

Contextual Info: MRA0510-50H NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 4L FLG. DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. E FEATURES: B C B C • Omnigold Metalization System • Diffused Ballast Resistors.

ASI2302

Abstract: ASI10534
Contextual Info: ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG A The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 3000 MHz. 2 ØD B .060 x 45° CHAMFER 3 C E 1 G FEATURES: L • PG = 9.5 dB min. at 2 W / 2300 MHz

power supply ax 322

Contextual Info: TL322I, TL322C DUAL LOW-POWER OPERATIONAL AMPLIFIERS D 2 5 6 7 , OCTOBER 1 9 7 9 -R E V IS E D OCTOBER 1 9 8 8 Wide Range of Supply Voltages Single Supply . . . 3 V to 36 V or Dual Supplies • Class AB Output Stage • True Differential Input Stage • Low Input Bias Current

Contextual Info: LM 4682 LM4682 10 Watt Stereo CLASS D Audio Power Amplifier with Stereo Headphone Amplifier and DC Volume Control Texa s In s t r u m e n t s Literature Number: SNAS271D t OBSOLETE LM4682 a l Sem iconductor Septem ber 24, 2011 B O O m r Audio Power Amplifier Series

tube 805

Abstract: power amplifier 1000 watts rms 210 radiotron RCA tube crest audio pro 8200 RADIOTRON RCA 2A3 rca company Rca 805
Contextual Info: 805 R-F POWER AMPLIFIER, OSCILLATOR, CLASS B MODULATOR_ F ila m e n t V o lt a g e C u rre n t T h o ria te d T un gste n 10 3,25 D ir e c t In t e r e le c t r o d e C a p a c ita n c e s G r id t o P la t e 6 .5 G r id t o F ila m e n t 8.5 P la t e t o F ila m e n t

Contextual Info: MICRO E LE CT RONI CS LTD 41E D b G T I TÛ ê 0 0 0 0 cl ci2 3 MEHK T -3 3 "/^ 2N3055 NPN HIGH POWER SILICON PLANER TRANSISTOR MECHANICAL UUTblWE. GENERAL DESCRIPTION The 2N3055 is an NPN silicon planer power transistor. It is intended for use in class B