CLASS A PUSH PULL POWER AMPLIFIER Search Results
CLASS A PUSH PULL POWER AMPLIFIER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
CLASS A PUSH PULL POWER AMPLIFIER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
eudyna GaAs FET Amplifier
Abstract: FLL2400IU-2C Eudyna Devices
|
Original |
FLL2400IU-2C FLL2400IU-2C eudyna GaAs FET Amplifier Eudyna Devices | |
FLL2400IU-2C
Abstract: RF POWER amplifier 10 watt
|
Original |
FLL2400IU-2C FLL2400IU-2C 12-R0 RF POWER amplifier 10 watt | |
Fujitsu GaAs FET Amplifier
Abstract: FLL2400IU-2C Fujitsu GaAs FET Amplifier design
|
Original |
FLL2400IU-2C FLL2400IU-2C FCSI1100M200 Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design | |
08120
Abstract: SDM-08120
|
Original |
SDM-08120 SDM-08120 AN054, EDS-103346 08120 | |
Contextual Info: FLL400IP-3 fujÎt su L-Band Medium & High Power GaAs FETs FEATURES • • • • Push-Pull Configuration High PAE: 43% Typ. Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that |
OCR Scan |
FLL400IP-3 FLL400IP-3 | |
120W amplifier
Abstract: SDM-09120 q458
|
Original |
SDM-09120 SDM-09120 AN054, EDS-103478 120W amplifier q458 | |
MP7510DS
Abstract: ic ca 810 audio amp audio amplifier IC 810 4000 w power amplifier circuit diagram class d 810 audio amplifier mono mosfet amplifier diagram power mosfet audio amplifier class-A class A push pull power amplifier mp7510 SOIC8 package
|
Original |
MP7510 MP7510 MP7510DS ic ca 810 audio amp audio amplifier IC 810 4000 w power amplifier circuit diagram class d 810 audio amplifier mono mosfet amplifier diagram power mosfet audio amplifier class-A class A push pull power amplifier SOIC8 package | |
video balun schematic
Abstract: LDMOS 60W POWER AMPLIFIER GSM repeater circuit SDM-09060-B1F video balun AN067
|
Original |
SDM-09060-B1F SDM-09060-B1F AN054 EDS-104211 200oC video balun schematic LDMOS 60W POWER AMPLIFIER GSM repeater circuit video balun AN067 | |
Contextual Info: SDM-09120-1Z Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Z 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The |
Original |
SDM-09120-1Z SDM-09120-1Z AN054, EDS-105407 | |
Contextual Info: SDM-09120-1Y Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Y 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The |
Original |
SDM-09120-1Y SDM-09120-1Y AN054, EDS-105407 | |
Contextual Info: SDM-09120 Product Description 925-960 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-09120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The |
Original |
SDM-09120 SDM-09120 AN054, EDS-103478 | |
Contextual Info: SDM-09120-1Y Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Y 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The |
Original |
SDM-09120-1Y SDM-09120-1Y AN054, EDS-105407 | |
Contextual Info: SDM-08060-B1F Product Description 869-894 MHz Class AB 65W Power Amplifier Module Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. |
Original |
SDM-08060-B1F SDM-08060-B1F EDS-104208 AN054, | |
564 fet
Abstract: FLL810IQ-3C
|
Original |
FLL810IQ-3C FLL810IQ-3C 564 fet | |
|
|||
Eudyna Devices
Abstract: eudyna fet FLL810IQ-3C
|
Original |
FLL810IQ-3C FLL810IQ-3C Symbo4888 Eudyna Devices eudyna fet | |
FLL810IQ-3C
Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
|
Original |
FLL810IQ-3C FLL810IQ-3C FCSI05019M200 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier | |
FLL810IQ-4CContextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design |
Original |
FLL810IQ-4C FLL810IQ-4C | |
Contextual Info: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which |
OCR Scan |
FLL600IQ-2 FLL600IQ-2 FCSI0597M200 | |
FLL600IQ-2Contextual Info: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which |
Original |
FLL600IQ-2 FLL600IQ-2 FCSI0597M200 | |
Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design |
Original |
FLL810IQ-4C FLL810IQ-4C | |
Contextual Info: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which |
Original |
FLL600IQ-2 FLL600IQ-2 | |
Contextual Info: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which |
Original |
FLL600IQ-2 FLL600IQ-2 FCSI0597M200 | |
FLL810IQ-4CContextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design |
Original |
FLL810IQ-4C FLL810IQ-4C Rat4888 | |
Contextual Info: SDM-08120 Product Description 869-894 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-08120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The |
Original |
SDM-08120 SDM-08120 AN054, EDS-103346 |