CL-200 IR Search Results

stec

Contextual Info: SL72A8M64M8M-C75xW U (Where x = CAS Latency; U selects RoHS Compliant, lead-free version.) 64M X 72 Bits (512MB) 200-Pin DDR SDRAM SO-DIMM with ECC (PC2100) FEATURES GENERAL DESCRIPTION • PC2100 Compliant (DDR266A 133MHz-7.5ns@CL = 2) (DDR266B 133MHz-7.5ns@CL = 2.5)

QVL21653

Abstract: SLOTTED OPTICAL SENSOR 2611 sensor
Contextual Info: SLOTTED OPTICAL SWITCH QVL21653 PACKAGE DIMENSIONS 3 2 .020 .50 .03 (.75) .023 (.60) XXXXXXX XX XXX .020 (.50) 4 1 SECTION X-X X XXXXXX XX XX X 1.150 (29.21) CL .177 (4.50) 2PLCS .276 (7.01) .398 (10.11) .138 (3.51) .638 (16.21) .200 (5.09) CL .350 (8.89)

QVL25335

Contextual Info: SLOTTED OPTICAL SWITCH QVL25335 PACKAGE DIMENSIONS 3 2 .020 .50 .03 (.75) .023 (.60) XXXXXXX XX XXX .020 (.50) 4 1 SECTION X-X X XXXXXX XX XX X 1.150 (29.21) CL .177 (4.50) 2PLCS .276 (7.01) .398 (10.11) .138 (3.51) .638 (16.21) .200 (5.09) CL .350 (8.89)

IGBT welding circuit

Contextual Info: CM300DU-34KA Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD KA-Series Module 300 Amperes/1700 Volts A B F TC MEASURED POINT G CL M T - (4 TYP.) N G2 Z E2 P E2 C2E1 C1 C E CL X Q G1 E1 AA LABEL R Y P Description:

Contextual Info: CM800DU-12H Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD U-Series Module 800 Amperes/600 Volts A B F G CL T - (4 TYP.) M N Z P C E CL X LABEL R Q AA Y P Description: Powerex IGBTMOD™ Modules are designed for use in switching

CM600DU-24F

Contextual Info: CM600DU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD F-Series Module 600 Amperes/1200 Volts A TC MEASURED POINT B F G CL T - (4 TYP.) M N Z P C E X CL LABEL R Q AA Y P W(4 PLACES) Description: Powerex IGBTMOD™ Modules are

Contextual Info: SG572288FG8EWUU April 26, 2010 Ordering Information Part Numbers Description Module Speed SG572288FG8EWDB 128Mx72 1GB , DDR2, 200-pin SO-DIMM, Registered, ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, Green Module (RoHS-6 Compliant). PC2-3200 @ CL 3.0 SG572288FG8EWDG

IRFD2Z3

Abstract: IRFD2Z0 A0025 43538
Contextual Info: Standard Power MOSFETs- IRFD2Z0, IRFD2Z1, IRFD2Z2, IRFD2Z3 File N u m b e r 2329 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -CHANNEL EN HANCEM ENT MODE 0.30 A and Cl.32 A, 150 V- 200 V

Contextual Info: CM200DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts A T - (4 TYP.) D TC MEASURED POINT U (4 PLACES) G2 E2 B E CM CL E2 C2E1 J C1 E1 G1 Q H P Q H Description:

dual DIODE 200A 600V

Abstract: CM200DU-24F
Contextual Info: CM200DU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts TC MEASURING POINT A D F T (4 TYP.) G2 B E CM C2E1 H E2 CL E2 J E1 C1 H G1 U Q P Q N K K K Description:

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TP10N B20 STP10N B20FP • . . . . dss 200 V 200 V R D S(on) Id < 0.4 0 Q. < 0.4 0 Cl 10 A 6 A TYPICAL RDS(on) = 0.3 EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: SG564288TG8NWUU May 7, 2008 Ordering Information Part Numbers Description Module Speed SG564288TG8NWDB 128Mx64 1GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS-6 Compliant), PC2-3200 @ CL 3.0

Contextual Info: SG564568TG8NWUU May 6, 2008 Ordering Information Part Numbers Description Module Speed SG564568TG8NWDB 256Mx64 2GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS-6 Compliant), PC2-3200 @ CL 3.0

Contextual Info: SG564283TG8NWUU1 June 18, 2008 Ordering Information Part Numbers Description Module Speed SG564283TG8NWDB1 128Mx64 1GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 25.40mm, 22Ω DQ termination, Green Module (RoHS Compliant), PC2-3200 @ CL 3.0

Contextual Info: SG564128FG8NZUU March 4, 2009 Ordering Information Part Numbers Description Module Speed SG564128FG8NZDB 512Mx64 4GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 256Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

Contextual Info: SG564288FG8NWUU June 13, 2008 Ordering Information Part Numbers Description Module Speed SG564288FG8NWDB 128Mx64 1GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

Contextual Info: SG564568FG8NWUU May 28, 2008 Ordering Information Part Numbers Description Module Speed SG564568FG8NWDB 256Mx64 2GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

SG572648FG8EZIL

Contextual Info: SG572648FG8EZUU July 29, 2008 Ordering Information Part Numbers Description Module Speed SG572648FG8EZDB 64Mx72 512MB , DDR2, 200-pin SO-RDIMM, Registered, ECC, 64Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS-6 Compliant). PC2-3200 @ CL 3.0

bad sec lar

Contextual Info: I p|-0 mationa I 9.1554 Provisional Data Sheet No. PD- M R Rectifier HEXFET POWER MOSFET IRFN9240 N -C H A N N E L -200 Volt, 0.51 Cl HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

F923

Abstract: IRF9230 IRF9232 IRF9231 IRF9233 transistors bipolar
Contextual Info: _ Rugged Power MOSFETs File Number IRF9230, IRF9231, IRF9232, IRF9233 2226 Avalanche-Energy-Rated P-Channel Power MOSFETs TERMINAL DIAGRAM -5.5 A and -6.5 A, -150 V and -200 V rDs on = 0.8 i l and 1.2 Cl D Features: • ■ ■ ■ • S ingle pulse avalanche e n ergy ra ted

QML-38534

Abstract: hxa 400
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 99-02-02 K.A. Cottongim Table I; Changed the max limit for the Capacitve load test (Cl ) from 200 |xf to 100 |xf. Redrew entire document, -s ld _ REV SHEET REV SHEET REV STATUS REV A A A A

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL03C200JA3GNNH  Product : Multi-layer Ceramic Capacitor  Description : CAP, 20㎊, 25V, ±5%, C0G, 0201 A. Samsung Part Number ① Series CL 03 C 200 J A 3 G N N H ① ② ③

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL21C201JBANFNC  Product : Multi-layer Ceramic Capacitor  Description : CAP, 200㎊, 50V, ±5%, C0G, 0805 A. Samsung Part Number ① Series CL 21 C 201 J B A N F N C ① ② ③

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N : CL03C200JA3GNNC • Product : Multi-layer Ceramic Capacitor • Description : CAP, 20㎊, 25V, ±5%, C0G, 0201 A. Samsung Part Number ① Series CL 03 C 200 J A 3 G N N C ① ② ③