CKE 8002 Search Results

sdram 4 bank 4096 16

Abstract: HM5264165DLTT-80 HM5264165DTT-80 HM5264805DTT-80 HM5264405DTT-80 Hitachi DSA00196 HM5264165DTT
Contextual Info: HM5264165D Series HM5264805D Series HM5264405D Series 64M LVTTL interface SDRAM 125 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank/ 4-Mword × 4-bit × 4-bank ADE-203-910 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi

HM5264805 Series

Abstract: HM5264165DTT-A60 sdram 4 bank 4096 16 Hitachi DSA00196
Contextual Info: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-909 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi

sdram 4 bank 4096 16

Abstract: HM5264165DTT-B60 Hitachi DSA00196
Contextual Info: HM5264165D-B60 HM5264805D-B60 HM5264405D-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-908 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi

HM5264165-B60

Abstract: HM5264805-B60 sdram 4 bank 4096 16 HM5264165 HM5264165TT-B60 Hitachi DSA00196
Contextual Info: HM5264165-B60 HM5264805-B60 HM5264405-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-832C Z Rev. 1.0 Jun. 25, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi

Hitachi DSA00164

Contextual Info: HM5221605 Series 2 M LVTTL interface SDRAM 64-kword x 16-bit × 2-bank 66 MHz / 58 MHz / 50 MHz ADE-203-199C (Z) Rev. 3.0 Nov. 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.

HM5221605TT-20

Abstract: HM5221605 HM5221605TT-15 HM5221605TT-17 1993 synchronous dram hitachi Hitachi DSA00196
Contextual Info: HM5221605 Series 2 M LVTTL interface SDRAM 64-kword x 16-bit × 2-bank 66 MHz / 58 MHz / 50 MHz ADE-203-199C (Z) Rev. 3.0 Nov. 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.

HM5221605

Abstract: HM5221605TT-15 HM5221605TT-17 HM5221605TT-20
Contextual Info: HM5221605 Series 2 M LVTTL interface SDRAM 64-kword x 16-bit × 2-bank 66 MHz / 58 MHz / 50 MHz ADE-203-199C (Z) Rev. 3.0 Nov. 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.

Contextual Info: HM5216326 Series 16M LVTTL interface SGRAM 2-Mword x 32-bit 125 MHz/100 MHz/83 MHz ADE-203-678B (Z) Preliminary Rev. 0.3 Jan. 14, 1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided

Nippon capacitors

Contextual Info: HB52E88EM-B6, HB52E89EM-B6, HB52E168EN-B6, HB52E169EN-B6 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M × 8 Components) (HB52E89EM) 8-Mword × 72-bit, 1-Bank Module (9 pcs of 8 M × 8 Components)

Contextual Info: HM5216805-A60, HM5216405-A60, HM5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword × 4-bit PC/100 SDRAM ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805, HM5216405 are

HM5216326

Abstract: HM5216326FP-10 HM5216326FP-12 HM5216326FP-8 Hitachi DSA00196
Contextual Info: HM5216326 Series 16M LVTTL interface SGRAM 125 MHz/100 MHz/83 MHz 256-kword x 32-bit × 2-bank ADE-203-678D Z Rev. 1.0 Jul. 6, 1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided

361BL

Contextual Info: HM5283206 Series 8M LVTTL interface SGRAM 1-Mword x 32-bit 125 MHz/100 MHz/83 MHz ADE-203-223D (Z) Rev. 4.0 Jan. 20, 1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided for

b6 ss 89

Abstract: HB52E168EN-B6 HB52E169EN-B6 HB52E88EM-B6 HB52E89EM-B6 Hitachi DSA00243 Nippon capacitors
Contextual Info: HB52E88EM-B6, HB52E89EM-B6, HB52E168EN-B6, HB52E169EN-B6 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M × 8 Components) (HB52E89EM) 8-Mword × 72-bit, 1-Bank Module (9 pcs of 8 M × 8 Components)

HB526C464EN-10IN

Abstract: Nippon capacitors
Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 64-bit, 66 MHz Memory Bus, 1/2-Bank Module 8/16 pcs of 2 M × 8 Components ADE-203-737D (Z) Rev. 4.0 Nov. 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

pec 630

Abstract: Nippon capacitors
Contextual Info: HB52C88EM, HB52C89EM HB52C168EN, HB52C169EN 64 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus HB52C88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M × 8 Components) (HB52C89EM) 8-Mword × 72-bit, 1-Bank Module (9 pcs of 8 M × 8 Components) 128 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB526C272EN-10IN, HB526C472EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 72-bit, 66 MHz Memory Bus, 1/2-Bank Module 9/18 pcs of 2 M × 8 Components ADE-203-693D (Z) Rev. 4.0 Nov. 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

Nippon capacitors

Contextual Info: HB526C272EN-10IN, HB526C472EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 72-bit, 66 MHz Memory Bus, 1/2-Bank Module 9/18 pcs of 2 M × 8 Components ADE-203-693D (Z) Rev. 4.0 Nov. 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

HB526C464EN-10IN

Abstract: Hitachi DSA00164 Nippon capacitors
Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 64-bit, 66 MHz Memory Bus, 1/2-Bank Module 8/16 pcs of 2 M × 8 Components ADE-203-737D (Z) Rev. 4.0 Nov. 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB52E89E1-B6 64 MB Registered SDRAM DIMM 8-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 9 pcs of 8 M × 8 Components PCSDRAM-0.8 ADE-203-890 (Z) Preliminary, Rev.0.0 Feb. 20, 1998 Description The HB52E89E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and have been

CDC2509

Abstract: BST R68 Nippon capacitors
Contextual Info: HB52E169E1-B6 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PCSDRAM-0.8 ADE-203-891 (Z) Preliminary Rev. 0.0 Feb. 20, 1998 Description The HB52E169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

equivalent transistor TT 3034

Abstract: TT 3034 HM5283206 HM5283206FP-10 HM5283206FP-12 HM5283206FP-8 Hitachi DSA00196
Contextual Info: HM5283206 Series 8M LVTTL interface SGRAM 125 MHz/100 MHz/83 MHz 128-kword x 32-bit × 2-bank ADE-203-223E Z Rev. 5.0 May. 19, 1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided for

Contextual Info: HM5216805-A60, HM5216405-A60, HM5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword x 4-bit PC/100 SDRAM HITACHI ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The H M 5216805, H M 5216405 are

Nippon capacitors

Contextual Info: HB52E48EM-B6 32 MB Unbuffered SDRAM DIMM 4-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 Components PCSDRAM-0.9 ADE-203-892 (Z) Preliminary Rev. 0.0 Feb. 20, 1998 Description The HB52E48EM belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

Nippon capacitors

Contextual Info: HB52C48EM Series 32 MB Unbuffered SDRAM DIMM 4-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 Components ADE-203-887 (Z) Preliminary Rev. 0.0 Feb. 20, 1998 Description The HB52C48EM belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been