CK 78 SMD Search Results

Contextual Info: SMD 4MM SQUARE / SINGLE-TURN CERMET / 5-TURN SEALED • Elastom er seal allow s m ultiple adjustm ents while m aintaining environm ental protection ■ R ecom m ended for reflow and w ave solder processing ■ Cross-slot rotor design suitable for autom atic adjustm ent equipm ent

CXD2408R

Abstract: ICX074AK ICX074AL
Contextual Info: CXD2408R Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2408R is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing circuits. Features • EIA support • Electronic shutter function

1M preset, horizontal

Abstract: CXD2408R ICX074AK ICX074AL CXD2311AR
Contextual Info: CXD2408R Timing Generator for Progressive Scan CCD Image Sensor For the availability of this product, please contact the sales office. Description The CXD2408R is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing

CXD2408R

Abstract: ICX074AK ICX074AL
Contextual Info: CXD2408R Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2408R is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing circuits. Features • EIA support • Electronic shutter function

sony ccd cmos camera

Abstract: CXD2408AR ICX074AK ICX074AL CXD2311AR
Contextual Info: CXD2408AR Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2408AR is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing circuits. Features • EIA support • Electronic shutter function

Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 B D S201/203/77 NPN silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN silicon epitaxial base transistors DESCRIPTION in a miniature SMD envelope 1

Contextual Info: PD-94584J S-SERIES 28V Input, Single/Dual Output HYBRID-HIGH RELIABILITY RADIATION HARDENED LOW POWER DC-DC CONVERTER Description The S-Series of DC-DC converters are low power radiation hardened, high reliability devices designed for hostile radiation environments such as those

Contextual Info: PD-94584H S-SERIES 28V Input, Single/Dual Output HYBRID-HIGH RELIABILITY RADIATION HARDENED LOW POWER DC-DC CONVERTER Description The S-Series of DC-DC converters are low power radiation hardened, high reliability devices designed for hostile radiation environments such as those

5962-04239

Abstract: S2805S/CK
Contextual Info: PD-94584H S-SERIES 28V Input, Single/Dual Output HYBRID-HIGH RELIABILITY RADIATION HARDENED LOW POWER DC-DC CONVERTER Description The S-Series of DC-DC converters are low power radiation hardened, high reliability devices designed for hostile radiation environments such as those

Contextual Info: For technical assistance call the Multifuser Products number on the back cover. > Features Applications • 4.5mm SMD ■ Fast tripping resettable circuit protection ■ Surface mount packaging for automated assembly ■ Reduced component size and resistance

Contextual Info: CERAMOS Lead Pb Free Product - RoHS Compliant LUW C9EN Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 78 lm bei 500 mA • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf

Contextual Info: CERAMOS Lead Pb Free Product - RoHS Compliant LUW C9EN Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 78 lm bei 500 mA • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf

Contextual Info: W3J512M72K-XPBX W3J512M72K-XLBX *ADVANCED 4GB – 512M x 72 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included

Contextual Info: CERAMOS Lead Pb Free Product - RoHS Compliant LUW C9EN Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 78 lm bei 500 mA • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf

w3j128m72

Abstract: w3j512m72
Contextual Info: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included

Contextual Info: Lattica ispLSI and pLS/0 1048C ;Semiconductor I Corporation High-Density Programmable Logic Features Functional Block Diagram HIGH-DENSITY PROGRAMMABLE LOGIC — 8000 PLD Gates — 96 I/O Pins, 12 Dedicated Inputs, 2 Global Output Enables — 288 Registers

Contextual Info: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

mt47h256m8EB

Abstract: 09005aef824f87b6 MT47H128M16 2Gb: x4, x8, x16 DDR2 SDRAM Features
Contextual Info: 2Gb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H512M4 – 64 Meg x 4 x 8 banks MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • Configuration

MT41K256M32

Abstract: FBGA DDR3 x32 MT41K256M3 MT41K256M16
Contextual Info: Preliminary‡ 8Gb: x32 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (11mm x 14mm x 1.2mm) Rev. D

MT41K256M32

Abstract: MT41K256M3 8Gb DDR3 SDRAM twindie MT41K256M16
Contextual Info: 8Gb: x32 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (11mm x 14mm x 1.2mm) Rev. D – 136-ball FBGA

capacitor 0.1 k 100 MKT

Contextual Info: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

IEC60063

Abstract: capacitor mkt 100nf
Contextual Info: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

capacitor 100nf 63v MKT

Abstract: smd code marking CK suppressor diode smd CK 78 smd varistor ck 100nF 63V polyester capacitor capacitor mkt 100nf
Contextual Info: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

FBGA DDR3 x32

Abstract: MT41K256M32 MT41K256M16 MT41K256M3 MICRON fBGA package code
Contextual Info: Preliminary‡ 8Gb: x32 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (11mm x 14mm x 1.2mm) Rev. D