CJB RESISTORS Search Results

CJB RESISTORS

Contextual Info: Low Profile Power Resistor Type CJB Series Type CJB Series Characteristics Electrical The CJB range of power resistors are aluminium housed and wirewound, designed to withstand high adiabatic pulses in a compact package. These devices offer a high power dissipation capacity

100 CJB

Contextual Info: No. 1773034 Low Profile Power Resistor Created 5-04 Type CJB Series Key Features • 250W To 1000W Power Dissipation ■ 2.5kV Isolation Voltage ■ High Overload Power Dissipation ■ High Adiabatic Pulse Energy Absorption ■ High Degree of Environmental Protection

CABLEFORM

Contextual Info: Cableform - Beman C a r b o n F ilm R e s is to r s • H i- V o lt a g e • H i-M e g o h m HIGH VOLTAGE RESISTORS Type Volts Max. CFA CFB CFC CFD CFE CFF CFG CFH CFJ 2,500 5,000 3,500 10,000 15,000 30,000 15,000 25,000 40,000 3 5 4 6 10 CJA CJB CJC CJD

Contextual Info: MITEL* b 5 4 T 3 7 0 D D G 7 2 cJb Q4b • M I T C M H 8 8 6 0 0 Global SLIC Preliminary Information ISSUE 4 9161-002-129-NA Features • • • • • • • • • • • • March 1992 Pin Connections Programmable line impedance matching Internal complex impedance networks

INA159-EP

Contextual Info: INA159 SBOS333B − JULY 2005 − REVISED OCTOBER 2005 Precision, Gain of 0.2 Level Translation DIFFERENCE AMPLIFIER FEATURES DESCRIPTION D GAIN OF 0.2 TO INTERFACE ±10V SIGNALS TO SINGLE-SUPPLY ADCs D D D D D D GAIN ACCURACY: ±0.024% max WIDE BANDWIDTH: 1.5MHz

atc100a101kp

Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK REFERENCE DATA

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Differential Clock D Flip-Flop MC10EL51 MC100EL51 The MC10EL/100EL51 is a differential clock D flip-flop with reset. The device is functionally similar to the E151 device with higher performance capabilities. With propagation delays and output transition times

RF5812

Abstract: motorola MRF5812 MRF5812 mrf5812 equivalent
Contextual Info: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MRF581 MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion

transistor 2222a

Abstract: k019 2222A transistor M2907A 2222a tm2907 2222A transistors ip 2222A
Contextual Info: SEC SILICON TRANSISTORS ELECTRON DEVICE N T M 2 2 2 2 A ,N T M 2 2 2 2 A R GENERAL PURPOSE AMPLIFIER, HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR "M INI MOLD TYPE” DESCRIPTION The N TM 2222A , N TM 2222A R are designed fo r general purpose am p lifie r and high speed sw itching applications, especially

32d4661

Abstract: 32F8030 32F8030-CL 32F8030-CN FC 0137
Contextual Info: SSI 32F8030 éwmsiiskms* Programmable Electronic Filter A TDK Group/Company December 1993 DESCRIPTION FEATURES TheS SI32F8030 Programmable Electronic Filter pro­ vides an electronically controlled low-pass filterw ith a separate differentiated low-pass output. A sevenpole, 0.05° Equiripple-type linear phase, low-pass

MRF5811

Abstract: ADC IC 0808
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz

Contextual Info: Ç ; /r^ T v j ‘v " ^ }X 2 0 2 0 1 ï s _ A-1/-2/-3 C X20202A-1/-2/-3 10/9/8-bit 160MSPS D/A Converter Descriptions A series of D/A converters CX20201A/ CX20202A convert binary data into an analog signal at rates higher than 160 MHz. The devices

jis z 0237

Abstract: l 0734 HP11590B
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1, T3 NPN Silicon High-Frequency TVansistors M o to r o la P r e fe r r e d D e v ic e s Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz

r5609

Abstract: RETICON R5609 RETICON reticon filter Pin-for-Pin Compatible with the 1015CP 1016CP xr1015
Contextual Info: XR-1015/1016 g ’ E X q R Seventh Order Elliptic Low Pass Filters PIN ASSIGNMENT GENERAL DESCRIPTION - ^ The XR-1015 and XR-1016 are seven pole and six zero elliptic low pass switched capacitor filters. The posi­ tion of the passband of the filter is set by the frequency

Contextual Info: INA159 SBOS333B − JULY 2005 − REVISED OCTOBER 2005 Precision, Gain of 0.2 Level Translation DIFFERENCE AMPLIFIER FEATURES DESCRIPTION D GAIN OF 0.2 TO INTERFACE ±10V SIGNALS TO SINGLE-SUPPLY ADCs D D D D D D GAIN ACCURACY: ±0.024% max WIDE BANDWIDTH: 1.5MHz

CLC220

Contextual Info: Fast Settling, Wideband Operational Amplifiers APPLICATIONS: FEATURES: • • • • • • • • • • very high speed D to A, A to D conversion high speed fiber optics systems baseband and video communications radar and IF processors very fast risetime pulse amplifiers

Contextual Info: INA159 SBOS333A − JULY 2005 − REVISED SEPTEMBER 2005 Precision, Gain of 0.2 Level Translation DIFFERENCE AMPLIFIER FEATURES DESCRIPTION D GAIN OF 0.2 TO INTERFACE ±10V SIGNALS TO SINGLE-SUPPLY ADCs D D D D D D GAIN ACCURACY: ±0.024% max WIDE BANDWIDTH: 1.5MHz

ADS7861

Abstract: ADS8325 ADS8361 INA159 INA159AIDGKR INA159AIDGKT INA159AIDGKTG4
Contextual Info: INA159 SBOS333B − JULY 2005 − REVISED OCTOBER 2005 Precision, Gain of 0.2 Level Translation DIFFERENCE AMPLIFIER FEATURES DESCRIPTION D GAIN OF 0.2 TO INTERFACE ±10V SIGNALS TO SINGLE-SUPPLY ADCs D D D D D D GAIN ACCURACY: ±0.024% max WIDE BANDWIDTH: 1.5MHz

ADS7861

Abstract: ADS8325 ADS8361 INA159 INA159AIDGKR INA159AIDGKRG4 INA159AIDGKT
Contextual Info: INA159 SBOS333B − JULY 2005 − REVISED OCTOBER 2005 Precision, Gain of 0.2 Level Translation DIFFERENCE AMPLIFIER FEATURES DESCRIPTION D GAIN OF 0.2 TO INTERFACE ±10V SIGNALS TO SINGLE-SUPPLY ADCs D D D D D D GAIN ACCURACY: ±0.024% max WIDE BANDWIDTH: 1.5MHz

Sdec Technology

Contextual Info: SX-Key Development System Manual Version 1.0 Warranty Parallax warrants its products against defects in materials and workmanship for a period of 90 days. If you discover a defect, Parallax will, at its option, repair, replace, or refund the purchase price. Simply call our sales department for an

Contextual Info: INA159 SBOS333B − JULY 2005 − REVISED OCTOBER 2005 Precision, Gain of 0.2 Level Translation DIFFERENCE AMPLIFIER FEATURES DESCRIPTION D GAIN OF 0.2 TO INTERFACE ±10V SIGNALS TO SINGLE-SUPPLY ADCs D D D D D D GAIN ACCURACY: ±0.024% max WIDE BANDWIDTH: 1.5MHz

4.7b1

Abstract: LC7538JM 0ELF LC7538
Contextual Info: Ordering number : EN4799A C M O S LSI No. 4799A LC7538JM Electronic Volume Control System for Car Audio Overview Package Dimensions The LC7538JM is a fully equipped electronic volume IC which permits significant reductions in externally connected components while providing ample volume,

INA159AIDGKRG4

Contextual Info: INA159 SBOS333B − JULY 2005 − REVISED OCTOBER 2005 Precision, Gain of 0.2 Level Translation DIFFERENCE AMPLIFIER FEATURES DESCRIPTION D GAIN OF 0.2 TO INTERFACE ±10V SIGNALS TO SINGLE-SUPPLY ADCs D D D D D D GAIN ACCURACY: ±0.024% max WIDE BANDWIDTH: 1.5MHz

Contextual Info: INA159 SBOS333B − JULY 2005 − REVISED OCTOBER 2005 Precision, Gain of 0.2 Level Translation DIFFERENCE AMPLIFIER FEATURES DESCRIPTION D GAIN OF 0.2 TO INTERFACE ±10V SIGNALS TO SINGLE-SUPPLY ADCs D D D D D D GAIN ACCURACY: ±0.024% max WIDE BANDWIDTH: 1.5MHz