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    CJAB Search Results

    CJAB Datasheets (22)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge CJAB20SN06
    		JCET Group N-Channel Power MOSFET CJAB20SN06 with 60V drain-source voltage, 20A continuous drain current, 8mΩ typical RDS(on) at 10V VGS, and 3.1W power dissipation in a 3x3-8L DFN package. Original PDF
    badge CJAB25P03
    		JCET Group P-Channel Power MOSFET CJAB25P03 with -30V drain-source voltage, -25A continuous drain current, 20mΩ typical RDS(on) at -10V VGS, advanced trench technology, low gate charge, and high ESD capability in a PDFN WB3.3×3.3-8L package. Original PDF
    badge CJAB65N04
    		JCET Group N-Channel Power MOSFET with 40V drain-source voltage, 65A continuous drain current, ultra-low RDS(on) of 6.2mΩ at 4.5V VGS, advanced trench technology, and high density cell design for efficient power management applications. Original PDF
    badge CJAB55P03A
    		JCET Group P-Channel Power MOSFET CJAB55P03A with -30V drain-source voltage, -55A continuous drain current, 6.5mΩ typical RDS(on) at -10V VGS, available in PDFN WB3.3x3.3-8L package. Original PDF
    badge CJAB25SN06
    		JCET Group N-Channel Power MOSFET CJAB25SN06 with 65V drain-source voltage, 25A continuous drain current, 1.5W power dissipation, and low RDS(on) of 13.5mΩ at VGS=10V, housed in a PDFNWB3.3x3.3-8L package for high-density switching applications. Original PDF
    badge CJAB55N03
    		JCET Group N-Channel Power MOSFET CJAB55N03 with 30V drain-source voltage, 55A continuous drain current, and low RDS(on) of 5.5mΩ at 10V, designed for high-density applications requiring efficient switching and power management. Original PDF
    badge CJAB40SN10
    		JCET Group N-Channel Power MOSFET CJAB40SN10 with 100V drain-source voltage, 40A continuous drain current, 8.5mΩ typical RDS(ON) at 10V VGS, SGT technology for low gate charge, and ultra-low on-resistance in a 3.3x3.3mm 8L PDFN package. Original PDF
    badge CJAB60N03
    		JCET Group N-Channel Power MOSFET CJAB60N03 with 30V drain-source voltage, 60A continuous drain current, and low RDS(on) of 4.2mΩ at 10V VGS, utilizing advanced trench technology for high efficiency and excellent thermal performance in a PDFN WB3.3×3.3-8L package. Original PDF
    badge CJAB40N03
    		JCET Group N-Channel Power MOSFET CJAB40N03 with 30V drain-source voltage, 40A continuous drain current, 6.5mΩ typical RDS(on) at 10V VGS, available in PDFN WB3.3×3.3-8L package for high-density switching applications. Original PDF
    badge CJAB25N03
    		JCET Group N-Channel Power MOSFET CJAB25N03 with 30V drain-source voltage, 25A continuous drain current, and ultra-low on-resistance of 10mΩ at 10V gate-source voltage, designed for high-density switching applications. Original PDF
    badge CJAB30N02
    		JCET Group N-Channel Power MOSFET CJAB30N02 with 20V drain-source voltage, 30A continuous drain current, and ultra-low RDS(on) of 6.2mΩ at 4.5V VGS, housed in a PDFNWB3.3x3.3-8L package for high-density applications requiring efficient switching and thermal performance. Original PDF
    badge CJAB35N03
    		JCET Group CJAB35N03 N-Channel Power MOSFET with 30V drain-source voltage, 35A continuous drain current, and low on-resistance of 7mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency and thermal performance. Original PDF
    badge CJAB35P03
    		JCET Group P-Channel Power MOSFET CJAB35P03 with -30V drain-source voltage, -35A continuous drain current, 15mΩ typical RDS(on) at VGS=-10V, and low gate charge, suitable for battery and load switching applications. Original PDF
    badge CJAB3R9SN04C
    		JCET Group N-Channel Power MOSFET CJAB3R9SN04C with 40V drain-source voltage, 70A continuous drain current, and ultra-low on-resistance of 3.0mΩ at 10V VGS, suitable for high-efficiency switching applications. Original PDF
    badge CJAB14P04
    		JCET Group P-Channel Power MOSFET CJAB14P04 with -40V drain-source voltage, -14A continuous drain current, 68mΩ typical RDS(on) at -10V VGS, and low gate charge, suitable for battery and load switching applications. Original PDF
    badge CJAB55N03S
    		JCET Group N-Channel Power MOSFET CJAB55N03S with 30V drain-source voltage, 55A continuous drain current, 3.8mΩ RDS(on) at 10V VGS, and 5.9mΩ at 4.5V VGS, housed in a PDFNWB3.3×3.3-8L package for high-density switching applications. Original PDF
    badge CJAB75N03U
    		JCET Group N-Channel Power MOSFET CJAB75N03U with 30V drain-source voltage, 75A continuous drain current, and low RDS(on) of 2.2mΩ at 10V, designed for high-density applications requiring efficient power switching. Original PDF
    badge CJAB35N03S
    		JCET Group N-Channel Power MOSFET CJAB35N03S with 30V drain-source voltage, 35A continuous drain current, and low on-resistance of 5.2mΩ at 10V gate-source voltage, housed in a 3x3.3mm PDFN package for high-density switching applications. Original PDF
    badge CJAB25N04S
    		JCET Group N-Channel Power MOSFET CJAB25N04S with 40V drain-source voltage, 25A continuous drain current, 9.4mΩ on-resistance at 10V VGS, and 3W power dissipation in a PDFN 3.3×3.3-8L package. Original PDF
    badge CJAB20N03
    		JCET Group N-Channel Power MOSFET CJAB20N03 with 30V drain-source voltage, 20A continuous drain current, 8.5mΩ typical RDS(on) at 10V VGS, available in PDFN WB3.3×3.3-8L package. Original PDF
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    Bulgin RFSMACJABB

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    Newark RFSMACJABB Bulk 50
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    Omnivision Technologies Inc OV03640-ECJA-BA0A

    KIT EVAL FOR OV03640 3MP
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    Omnivision Technologies Inc OV05642-ECJA-BA0A

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    Omnivision Technologies Inc OV02722-ECJA-BA0A

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    Infineon Technologies AG S6J336CJABSE20000

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    CJAB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    working of colpitts oscillator

    Abstract: CON2 connector AN-532A
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Carrier Band Modem CBM MC68194 The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase-coherent carrier band Local Area Network (LAN) connection. The CBM


    OCR Scan     		MC68194 MC68824 DL122 1fl71S MC68194 b3b7552 working of colpitts oscillator CON2 connector AN-532A PDF

    MC68824

    Abstract: AN532A working of reactance modulator AN-532A AN535 DL122 MC68000 MC68194 MPS2369 MPSH81
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Carrier Band Modem CBM MC68194 The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase–coherent carrier band Local Area Network (LAN) connection. The CBM


    Original     		MC68194 MC68194 MC68824 DL122 MC68194/D* MC68194/D AN532A working of reactance modulator AN-532A AN535 MC68000 MPS2369 MPSH81 PDF

    bistable multivibrator using ic 555

    Abstract: CBM 4080 mc10116fn 10H351 10h115 MC1658 10h350 MC10197-D G2Q16 MC68824
    Contextual Info: DL122/D Rev. 7, Mar-2000 ON Semiconductor MECL Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original     		DL122/D Mar-2000 m22-3781 r14525 DL122 bistable multivibrator using ic 555 CBM 4080 mc10116fn 10H351 10h115 MC1658 10h350 MC10197-D G2Q16 MC68824 PDF

    mc68194f

    Abstract: capacitor charge indicator 55050A
    Contextual Info: MC68194 Carrier Band Modem CBM The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase−coherent carrier band Local Area Network (LAN) connection. The CBM performs the Physical Layer


    Original     		MC68194 MC68824 MC68194/D mc68194f capacitor charge indicator 55050A PDF

    Contextual Info: M SC23V13258D-xxBS2 98.3.12 OKI semiconductor MSC23V13258D-XXBS2 1,048,576 Word X 32 Bit DYNAMIC RAM MODULE D E S C R IP TIO N The Oki MSC23V13258D-xxBS2 is a fully decoded, 1,048,576-word X 32 bit CMOS dynamic random access memory composed of two 16 Mb (1Mx16) DRAMs in TSOP packages. The mounting of two DRAMs together with


    OCR Scan     		SC23V13258D-xxBS2 MSC23V13258D-XXBS2 MSC23V13258D-xxBS2 576-word 1Mx16) 100-pin 32-Bit cycles/16 Row/10 PDF

    MC68824

    Abstract: AN532A AN535 MC68000 MC68194 MC68194FJ MC68194FJR2 MPSH81 CVCM
    Contextual Info: MC68194 Carrier Band Modem CBM The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase–coherent carrier band Local Area Network (LAN) connection. The CBM performs the Physical Layer


    Original     		MC68194 MC68194 MC68824 r14525 MC68194/D AN532A AN535 MC68000 MC68194FJ MC68194FJR2 MPSH81 CVCM PDF

    AN532A

    Abstract: AN-532A mc6882 mc68194f
    Contextual Info: MC68194 Carrier Band Modem CBM The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase–coherent carrier band Local Area Network (LAN) connection. The CBM performs the Physical Layer


    Original     		MC68194 MC68824 AN532A AN-532A mc6882 mc68194f PDF