CJAB Search Results
CJAB Datasheets (22)
JCET Group
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CJAB20SN06
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JCET Group | N-Channel Power MOSFET CJAB20SN06 with 60V drain-source voltage, 20A continuous drain current, 8mΩ typical RDS(on) at 10V VGS, and 3.1W power dissipation in a 3x3-8L DFN package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB65N04
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JCET Group | N-Channel Power MOSFET with 40V drain-source voltage, 65A continuous drain current, ultra-low RDS(on) of 6.2mΩ at 4.5V VGS, advanced trench technology, and high density cell design for efficient power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB55P03A
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JCET Group | P-Channel Power MOSFET CJAB55P03A with -30V drain-source voltage, -55A continuous drain current, 6.5mΩ typical RDS(on) at -10V VGS, available in PDFN WB3.3x3.3-8L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB25P03
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JCET Group | P-Channel Power MOSFET CJAB25P03 with -30V drain-source voltage, -25A continuous drain current, 20mΩ typical RDS(on) at -10V VGS, advanced trench technology, low gate charge, and high ESD capability in a PDFN WB3.3×3.3-8L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB60N03
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JCET Group | N-Channel Power MOSFET CJAB60N03 with 30V drain-source voltage, 60A continuous drain current, and low RDS(on) of 4.2mΩ at 10V VGS, utilizing advanced trench technology for high efficiency and excellent thermal performance in a PDFN WB3.3×3.3-8L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB40N03
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JCET Group | N-Channel Power MOSFET CJAB40N03 with 30V drain-source voltage, 40A continuous drain current, 6.5mΩ typical RDS(on) at 10V VGS, available in PDFN WB3.3×3.3-8L package for high-density switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB40SN10
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JCET Group | N-Channel Power MOSFET CJAB40SN10 with 100V drain-source voltage, 40A continuous drain current, 8.5mΩ typical RDS(ON) at 10V VGS, SGT technology for low gate charge, and ultra-low on-resistance in a 3.3x3.3mm 8L PDFN package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB25SN06
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JCET Group | N-Channel Power MOSFET CJAB25SN06 with 65V drain-source voltage, 25A continuous drain current, 1.5W power dissipation, and low RDS(on) of 13.5mΩ at VGS=10V, housed in a PDFNWB3.3x3.3-8L package for high-density switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB55N03
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JCET Group | N-Channel Power MOSFET CJAB55N03 with 30V drain-source voltage, 55A continuous drain current, and low RDS(on) of 5.5mΩ at 10V, designed for high-density applications requiring efficient switching and power management. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB25N03
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JCET Group | N-Channel Power MOSFET CJAB25N03 with 30V drain-source voltage, 25A continuous drain current, and ultra-low on-resistance of 10mΩ at 10V gate-source voltage, designed for high-density switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB35N03
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JCET Group | CJAB35N03 N-Channel Power MOSFET with 30V drain-source voltage, 35A continuous drain current, and low on-resistance of 7mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency and thermal performance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB35P03
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JCET Group | P-Channel Power MOSFET CJAB35P03 with -30V drain-source voltage, -35A continuous drain current, 15mΩ typical RDS(on) at VGS=-10V, and low gate charge, suitable for battery and load switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB30N02
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JCET Group | N-Channel Power MOSFET CJAB30N02 with 20V drain-source voltage, 30A continuous drain current, and ultra-low RDS(on) of 6.2mΩ at 4.5V VGS, housed in a PDFNWB3.3x3.3-8L package for high-density applications requiring efficient switching and thermal performance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB25N04S
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JCET Group | N-Channel Power MOSFET CJAB25N04S with 40V drain-source voltage, 25A continuous drain current, 9.4mΩ on-resistance at 10V VGS, and 3W power dissipation in a PDFN 3.3×3.3-8L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB35N03S
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JCET Group | N-Channel Power MOSFET CJAB35N03S with 30V drain-source voltage, 35A continuous drain current, and low on-resistance of 5.2mΩ at 10V gate-source voltage, housed in a 3x3.3mm PDFN package for high-density switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB75N03U
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JCET Group | N-Channel Power MOSFET CJAB75N03U with 30V drain-source voltage, 75A continuous drain current, and low RDS(on) of 2.2mΩ at 10V, designed for high-density applications requiring efficient power switching. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB14P04
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JCET Group | P-Channel Power MOSFET CJAB14P04 with -40V drain-source voltage, -14A continuous drain current, 68mΩ typical RDS(on) at -10V VGS, and low gate charge, suitable for battery and load switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB3R9SN04C
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JCET Group | N-Channel Power MOSFET CJAB3R9SN04C with 40V drain-source voltage, 70A continuous drain current, and ultra-low on-resistance of 3.0mΩ at 10V VGS, suitable for high-efficiency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB55N03S
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JCET Group | N-Channel Power MOSFET CJAB55N03S with 30V drain-source voltage, 55A continuous drain current, 3.8mΩ RDS(on) at 10V VGS, and 5.9mΩ at 4.5V VGS, housed in a PDFNWB3.3×3.3-8L package for high-density switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB55P03
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JCET Group | P-Channel Power MOSFET CJAB55P03 with -30V drain-source voltage, -55A continuous drain current, 8.0mΩ RDS(on) at -10V VGS, and 59W power dissipation in a PDFN WB3.3x3.3-8L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAB Price and Stock
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Micron Technology Inc MT29F256G08CJABAWP-IT:B TR- Tape and Reel (Alt: MT29F256G08CJABAWP-IT:B TR) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MT29F256G08CJABAWP-IT:B TR | Tape & Reel | 31 Weeks | 1,000 |
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Get Quote | |||||
Seiko Epson Corporation SG3225EEN 150.000000M-CJGABStandard Clock Oscillators SG3225EEN 150.000000M-CJGAB: XTAL OSC 3.3V 50PPM-40 85C BULK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SG3225EEN 150.000000M-CJGAB |
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Get Quote | ||||||||
Seiko Epson Corporation SG3225VEN 135.000000M-CJGABStandard Clock Oscillators SG3225VEN 135.000000M-CJGAB: XTAL OSC 3.3V +/-50PPM -40 85C BULK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SG3225VEN 135.000000M-CJGAB |
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Get Quote | ||||||||
Seiko Epson Corporation SG3225VEN 150.000000M-CJGABStandard Clock Oscillators SG3225VEN 150.000000M-CJGAB: XTAL OSC 3.3V +/-50PPM -40 85C BULK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SG3225VEN 150.000000M-CJGAB |
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Get Quote | ||||||||
Seiko Epson Corporation SG3225EEN 125.000000M-CJGABStandard Clock Oscillators SG3225EEN 125.000000M-CJGAB: XTAL OSC 3.3V +/-50PPM-40 85C BULK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SG3225EEN 125.000000M-CJGAB |
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Get Quote | ||||||||