CJ 24 Search Results

C S 6822

Abstract: S 6822 7818a 7812a DH 514 89052 DH822 DH 636 MH 74150 60034
Contextual Info: PART NUMBER INDEX Type pg Type CJ 1023 C J 1024 C J 1201 CJ 2002 CJ 2501 CJ 4002 CJ 5001 CJ 8002 C S 1010 C S 1020 C S 1021 C S 1033 C S 1210 C S 1220 C S 1221 C S 1222 C S 1510 C S 1520 C S 1521 C S 1522 C S 1810 C S 1821 C S 1822 C S 2200 C S 2210 C S 2221

RS3150CJ

Abstract: triode rs 3150 cj "Power Triode" thales THALES tube a 3150 data sheet TRIODE P539 rs tube
Contextual Info: INDUSTRIAL RF HEATING RS 3150 CJ Water-cooled triode 240 kW Output power: 240 kW in CW mode Anode voltage: 15 kV Anode dissipation: 100 kW max. Frequency up to 100 MHz INDUSTRIAL RF HEATING The RS 3150 CJ is a RF power triode designed specifically for industrial

CRYSTAL SMD 8MHZ

Abstract: osc 50.0MHz
Contextual Info: Cal Crystal Lab, Inc./Comclok, Inc. 800-333-9825 CERAMIC SURFACE MOUNT OSCILLATORS MODEL MODEL CJ Model CJ 3.3V SMD CH 5.0V SMD CH Frequency Range Frequency Stability 1.8000MHz ~ 100.000MHz 100ppm Standard, Optional Tolerances Available 1.8000MHz ~ 100.000MHz

SMD A1W

Abstract: 1470 LM BSM 214 A NMA0505 A1W SMD NMA0515 MIL-HDBK-21 NMH 80 NMA1215
Contextual Info: 5ll5ûS5i! ifi7 N M A Series Isolated 1W Dual Output CJ Input/Output isolation 1OOOVDC □ Low profile O High efficiency up to 80% CJ DIP, SIP and surface mount styles □ 3.3V, 5V, 12V, 24V and 48V input O P'n compatible with NMH series □ Power density 1.41 W /cm3

Contextual Info: EUAA18-20.000M-CJ Pb RoHS EU A A 18 -20.000M - CJ Series RoHS Compliant Pb-free Resistance Welded HC-49/U Crystal Cut Leads Cut Leads to 7.620 ±0.500 (0.300" ±0.020") Value Added Option Prefix Frequency Tolerance/Stability ±50ppm at 25°C, ±100ppm over 0°C to +70°C

Contextual Info: Crossover Quads Features • ■ ■ ■ ■ ■ V ery low Cj .08 pF typical designed for optim ized broadband perform ance R educed Parasitics Hi Reliability M etal System 3 0 0 ° C Rugged Physical Construction W ell M atched Diode Junctions Low Drive, low Cj, low Rs

Contextual Info: E1UFA18-20.480M-CJ Pb RoHS E1U F A 18 -20.480M - CJ Series RoHS Compliant Pb-free Resistance Welded Short HC-49/US Crystal Cut Leads Cut Leads to 7.620 ± 0.500 (0.300" ±0.020") Value Added Option Prefix Frequency Tolerance/Stability ±30ppm at 25°C, ±50ppm over -40°C to +85°C

omron proximity sensor

Abstract: omron cj1m programming cable pin CJ1M-CPU22 CJ1W-ID211 Omron r88d-wt W395-E1-01 Omron Programming Console PRO 27 pls2 acc CJ1M-CPU23 omron plc CJ1M CPU 11 configuration
Contextual Info: Cat. No. W395-E1-01 CJ-series Built-in I/O CJ1M-CPU22/CPU23 CJ1M CPU Units OPERATION MANUAL CJ-series Built-in I/O CJ1M-CPU22/CPU23 CPU Units Operation Manual Produced July 2002 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator

OMRON PRO01 programming console

Contextual Info: Cat. No. W345-E1-11 SYSMAC CS/CJ Series CS1W-AD/DA CS1W-MAD CJ1W-AD/DA CJ1W-MAD Analog I/O Units OPERATION MANUAL SYSMAC CS/CJ Series CS1W-AD041-V1/AD081-V1/AD161 CS1W-DA041/DA08V/DA08C CS1W-MAD44 CJ1W-AD041-V1/AD081-V1/AD042 CJ1W-DA021/DA041/DA08V/DA08C/DA042V

Sysmac CJ1M ID211

Abstract: Sysmac CJ1M OD211 CJ1M-CPU22 counter pv read W395-E1-03 omron cj1m programming cable pin CJ1W-id211 Omron r88d-wt omron plc CJ1M CPU 13 troubleshooting CJ1M-CPU21
Contextual Info: Cat. No. W395-E1-03 CJ-series Built-in I/O CJ1M-CPU21/22/23 CJ1M CPU Units CJ-series Built-in I/O CJ1M-CPU21/22/23 CPU Units Operation Manual Revised August 2004 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.

Contextual Info: SKD 25 @N$[G @NN[ @@N[$ MO X K? ] VL/ X ^I _PZ P4'¥ N4.6 @ K? c? d? =K? =c? @ LC* , $aO KJb?K $aO KJb?c $aO KJb?d $aO KJb=K $aO KJb=c TU ` ?G=J ?GI ?G^ = =GK =>? Symbol MO Power Bridge Rectifiers MOPE $aO KJb=> Conditions L' X cJ _PG .,2+'-)3=Z L' X cJ _PG /1',.,KZ

Contextual Info: 2 7 LD OT LD .O O <J E D □ 0-5^^o CAMBER s 0.5 MAX. , J - J ' / h N O . H NO." 1 D m CIRCUIT NO.: I ONLY. 43.56 39.6 35.64 3 1.68 27.72 23.76 19.8 15.84 1.88 7.92 3.96 B <r cc O < * CJ m JtC x T N O . CAVITY NO. o o o CJ cE: i— Ld 09- 50 > - 12 i I

SR1M-2

Abstract: SR1K-4 SR1K4 SR1K-12 SR1G16 SR1G-16 SR1K-20 SR1G-8 SR1FM-16 SR1G-12
Contextual Info: 259E 259E 259E 259E 259E üè c-j o o o c_> «_> O O O O C- cj>o o e? o CT> CT> •—1 •—i —i co co co co co « i « M n CO CO co co co CO co co co co O CJ> O O IO CO OO co co to tD «5 SOU U rH O CO CO «O » Si # Q g S * § •< II. ts 200 400 600

SR1G-16

Abstract: SR1K-12 SR1FM-16 SR1FM-20 SR1G-12 SR1HM-12 SR1HM-16 SR1K-16 SR1K-20 SR1K-24
Contextual Info: 259E 259E 259E 259E 259E üè c-j o o o c_> «_> O O O O C- cj>o o e? o CT> CT> •—1 •—i —i co co co co co « i « M n COCO co co co CO co co co co O CJ> O O IO CO OO co co to tD «5 SOU U rH O CO CO «O » Si # Q g S *r ll^* >v * § •< II. ts

octal isolator

Abstract: loc a6-5 NM1608 300C newport components
Contextual Info: 0000471 b?l HINCLB NEWPORT COMPONENTS LTD Microprocessor Support Circuit Type N M1608 Octo-lsolator 8 bit Active Data-Bus Isolator □ 5Volt-only operation □ Standard 24 pin outline □ Low profile □ Bi-directional CJ High isolation □ Low power consumption

SR1G-16

Abstract: SR1K-4 SR1K-12 SRIM SR1G-8 SR1M-4 srig-8 SR1K-8 SR1K4 SR1FM-4
Contextual Info: 259E 259E 259E 259E 259E üè cj>o c-j o e? o CT> CT> •—1 •—i —i co co co co co « i « M n o CO o o c_> «_> O O O O C- O CJ> O O IO CO co co co CO co co co co CO OO co co to tD «5 SOU U rH O CO CO«O » Si # Q g S *r ll^* >v 100 50 150 j 600

SR1K-4

Abstract: SR1K4 SR1K8 SR1K-8 SR1K-12 sr1k20 SR1K-16 SR1FM-4 SR1K-20 SR1G-16
Contextual Info: 259E 259E 259E 259E 259E üè c-j o o o c_> «_> O O O O C- cj>o o e? o CT> CT> •—1 •—i —i co co co co co « i « M n CO CO co co co CO co co co co O CJ> O O IO CO OO co co to tD «5 SOU U rH O CO CO «O » Si # Q g S *r ll^* >v * § •< II. ts

Contextual Info: DKV6533-24 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10p C1/C2 Min. Capacitance Ratio2.0 V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)200m Semiconductor MaterialSilicon Package StyleAxial

Contextual Info: 2403 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.210p C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage2.5 Q Factor Min.55 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 2401 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.155p C1/C2 Min. Capacitance Ratio6.4 V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.70 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 2402 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.155p C1/C2 Min. Capacitance Ratio2.4 V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.70 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

SR1G-16

Abstract: SR1K-12 SR1FM-16 SR1FM-20 SR1G-12 SR1HM-12 SR1HM-16 SR1K-16 sr1k-4 SR1G12
Contextual Info: 259E 259E 259E 259E 259E üè c-j co co co co cj>o o e? o CT> CT> •—1 •—i —i co « i « M n o o c_> «_> O O O O C- CO co co co co o CO CO co co co O CJ> O O IO CO OO co co to tD «5 SOU U rH O CO CO «O » Si # Q g S *r ll^* >v § 10 0 OO O OO

SR1G-16

Abstract: SR1K-12 SR1S-4 SR1FM-4 SR1K-16 SR1K-4 SR1FM-16 SR1FM-20 SR1G-12 SR1HM-12
Contextual Info: 259E 259E 259E 259E 259E üè c-j co co co co cj> o o e? o CT> CT> •—1 •—i —i co « i « M n o o c_> «_> O O O O C- CO co co co co o CO CO co co co O CJ> O O IO CO OO co co to tD «5 SO U U rH O CO CO «O » S i # Q g S *r ll^* >v II. O g O O

Contextual Info: + cu 1 1 CL Q_ CY in i cu Cl iy : + i Cl CO Cl CO Cl i— ty : CY \— i— i— ru cn ^0 ty + i i— ty CL iy : i— Q_ iy : i— in h- 03 3 PL, CJ w N OJ CD 1 •^r PI a 1— a CY \— 1— i— CU CO /ft? 00 g E CO ^cu m + cu CJ in VJ3 <Y i CU + cu a cy