CI-4010
Abstract: CISS 3010 50 Hz notch filter ldr used in light sensitive alarm motion DETECTOR CIRCUIT using LDR dark light sensor using LDR AND transistor LIGHT ALARM CIRCUIT WITH LDR motion DETECTOR CIRCUIT DIAGRAM dual bright 3mm LDR simple circuit design of ldr sensor
Contextual Info: CISS Motion Detector MOTION DETECTOR CI-3010 Information Brochure ➫ CI-3010 Motion Detector IC ➫ CI-3010 Application Notes ➫ CI-3010 Motion Detector Set → PIR Sensor → Fresnel Lens → LDR ➫ CI-3010 Demonstration Board 1.0 27. August 1997 Creations In Silicon & Software
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ci-3010ci-4010ciss 301050 hz notch filter+7ldr used in light sensitive alarmmotion detector circuit using ldrdark light sensor using ldr and transistorlight alarm circuit with ldrmotion detector circuit diagram dual bright3mm ldrsimple circuit design of ldr sensor
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APT*1002R4BN
Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0
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o-247apt1001rbnapt1001r1bnapt1001rbnr+16apt1001r1bnrapt1001r3bnapt1001r6bnapt1002rbnapt1002r4bnapt1002rbnrapt*1002r4bnapt5040bnffredfetapt802r4bnapt5020bnrapt5085bnapt5020bnfapt5025bnapt6040bnrapt5085bnf
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2SJ583LS
Abstract: TO-220FI-LS
Contextual Info: 注文コード No. N 6 4 0 9 2SJ583LS No. N 6 4 0 9 30100 新 2SJ583LS 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・マイカレスパッケージで取り付け作業性が良い。
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J584
Abstract: IT01500 2SJ584LS
Contextual Info: 注文コード No. N 6 4 1 0 2SJ584LS No. N 6 4 1 0 30100 新 2SJ584LS 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・マイカレスパッケージで取り付け作業性が良い。
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2SJ585LS
Abstract: 2SJ585 TA-2756 TO-220FI
Contextual Info: 注文コード No. N 6 4 1 2 2SJ585LS No. N 6 4 1 2 30100 新 2SJ585LS 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・マイカレスパッケージで取り付け作業性が良い。
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TA-2770
Abstract: 2SJ416 FX856 53723
Contextual Info: 注文コード No. N 5 3 7 2 A FX856 No. N 5 3 7 2 A 30100 新 開発速報 No. ※ 5372 とさしかえてください。 FX856 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
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n-channel dual 3010
Abstract: CISS 3010 SL-30101 SL-3010 SL-30102 SL3010 j177 equivalent transistor
Contextual Info: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
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3010 MOS
Abstract: j177 equivalent transistor
Contextual Info: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
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sl-3010sl-30101sl-301023010 mos+1j177 equivalent transistor
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CPH5603
Abstract: sanyo 2168
Contextual Info: Ordering number:ENN6388 P-Channel Silicon MOSFET CPH5603 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5603] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Composite type with 2 MOSFETs contained in a
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FTS1003
Abstract: TA212
Contextual Info: Ordering number:ENN6154A P-Channel Silicon MOSFET FTS1003 Load Switching Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. unit:mm 2147A [FTS1003] 0.65 5 4 Specifications 0.25 0.95 1 1 : Drain 2 : Source
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2SK3021
Contextual Info: Ordering number:ENN6230 N-Channel Silicon MOSFET 2SK3021 DC/DC Converter Applications Features Package Dimensions • Low ON-resistance. · 4V drive. unit:mm 2083B [2SK3021] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 2.3 1 : Gate
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marking ku
Abstract: 2SK3121
Contextual Info: Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3121] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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CPH3306
Abstract: TA-2307
Contextual Info: Ordering number:EN6438 P-Channel Silicon MOSFET CPH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3306] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05
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TA306
Abstract: CPH3413
Contextual Info: Ordering number : ENN6924 CPH3413 N-Channel Silicon MOSFET CPH3413 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3413] 2.9 0.15 0.4 0.6 3 0.2 • 2 1
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2062A
Abstract: 2SK3122 DS-17 SANYO
Contextual Info: Ordering number:ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3122] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
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DS-17 SANYO
Abstract: 2SK3122 marking KW
Contextual Info: Ordering number:ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3122] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
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2SK3120
Contextual Info: Ordering number:ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3120] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
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2SK3119
Abstract: TA2494
Contextual Info: Ordering number:ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3119] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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TA-2307
Abstract: CPH3306
Contextual Info: Ordering number:EN6438 P-Channel Silicon MOSFET CPH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3306] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05
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MARKING KU
Abstract: 2SK3121
Contextual Info: Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3121] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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2SK3119
Abstract: TA2494
Contextual Info: Ordering number:ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3119] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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FTS2004
Abstract: S2004
Contextual Info: Ordering number:ENN5949A N-Channel Silicon MOSFET FTS2004 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. · Mounting height 1.1mm. unit:mm 2147A [FTS2004] 0.65 5 4 Specifications 0.25 0.95 1 1 : Drain
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S2004
Abstract: FTS2004
Contextual Info: Ordering number : ENN5949A SANYO Semiconductors DATA SHEET FTS2004 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON resistance. · 4V drive. · Mounting height 1.1mm. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter
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CPH5601
Contextual Info: Ordering number:ENN6439 P-Channel Silicon MOSFET CPH5601 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5601] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a
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