CI 952 Search Results

A1000-REV00k9040-IE

Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
Contextual Info: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/23
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1n52318

Abstract: 1N5231B CAT525 CAT525JI-TE13
Contextual Info: CI A K T A K L-V' S T Advance Information CAT525 8-Bit Quad Digital POT With Independent Reference Inputs FEATURES APPLICATIONS • Buffered Outputs ■ Automated product calibration. ■ Output settings retained without power ■ Remote control adjustment of equipment

IR3C07

Abstract: lt015 LT023MC IR3C07N LT026MD LT023 LT026 lt024 LT024 LASER
Contextual Info: IR3C07/IR3C07N Pin Assignment Pin No. Symbol IR3C07/IR3C07N Function 'I o ?r ci 1 OUT 2 Cp Phase C om pensation 3 IM M o n ito r input 4 GND 5 INH 6 So O p e ra tin g signal output 7 Vcc Control Circuit Power Supply 8 V ps Laser Drive Power S upply O u tp ut

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

packard 56-Series

Abstract: Packard 56 Series R-69323
Contextual Info: DRAWING AND DESIGN HEREON CON­ STITUTES A PRO PRIETARY DESIGN OF E £ ci!£ R.S.I.L £ P T F l c d iv is io n and is n o t R y i i y ^ J I 0 0R r e p r o d u c e d w it h S H J . ^ L HOflITY 0 F PACKARD ELEC TR IC u ly ISlUN DATE 3YM 25JA85 - REVISION RECORD

BS3643

Abstract: R4453 R4451 R4457 R4051
Contextual Info: mg urmwawapta« .lAV/WG NUMBER g \- R Z , 4 5 1 ;- : 0 2 THIRD Amai n ANGLE PROJECTION DO NOT SCALE £ j L 4£ ? _ -Q A . X L CD ^ 0 -1 5 WHECC MAÊlCÊO TWOS I t I STOCK s •<r Ci J3_ IZ R4457- 02 8 6 i«. 2 5 Ì 8 1-000 ^ 2 5 4 NOTE R 44-56 » 0 2 7 6 1 .2 2 4 -

panasonic rotational encoder

Abstract: encoder Matsushita encoder Matsua rotary Encoder oka 100N panasonic rotary encoder circuit diagram 6036C mini encoder
Contextual Info: THIRD ANGLE PROJECTION ALL DIMENSIONS ARE IN M ILLIM ETERS. 10 NOT SCALE DRAWING G en eral d im ension to le ro n c e : ± 0 . 5 eI x c e p t s a f e a r e a A A- 1 .5 GÎ q: oo oò c x a 'S A ,P 2 .5x4 = 1 0 , C ro ss section of shaft A-A' P . W . B pier ci ng plan.

A12Q

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

IRGB6B60KDPBF

Abstract: AN-994 C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRF53
Contextual Info: PD - 95229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

Contextual Info: PD - 95229C IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

IRF 1640 G

Abstract: IRF 1630 47W surface mount transistor IRF 1640 NAT 3 transistor
Contextual Info: PD - 95229 IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

AN-994

Abstract: C-150 IRF530S IRGS6B60KD IRGSL6B60KD
Contextual Info: PD - 95229 IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95269 IRF7842PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated DC-DC Converters l Lead-Free Benefits l Very Low RDS on at 4.5V VGS

EIA-541

Abstract: IRF7101
Contextual Info: PD - 95269 IRF7842PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated DC-DC Converters l Lead-Free Benefits l Very Low RDS on at 4.5V VGS

AN-1005

Abstract: IRFL014
Contextual Info: PD - 95250 AUTOMOTIVE MOSFET IRFL024ZPbF HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 57.5mΩ G ID = 5.1A

AN-1005

Contextual Info: PD - 95250A AUTOMOTIVE MOSFET IRFL024ZPbF HEXFET Power MOSFET Features l l l l l l D Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS on = 57.5mΩ

Contextual Info: PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDSS R DS on max Qg(typ.) 30V 13.8m @V GS = 10V

c k 7101 switch

Abstract: EIA-541 IRF7101 IRF7842PBF
Contextual Info: PD - 95269 IRF7842PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated DC-DC Converters l Lead-Free Benefits l Very Low RDS on at 4.5V VGS

Contextual Info: PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDSS R DS on max Qg(typ.) 30V 13.8m @V GS = 10V

MOSFET IRF 3710

Abstract: IC 7486 F7101 EIA-541 IRF7101
Contextual Info: PD - 95292 IRF7834PbF Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free HEXFET Power MOSFET VDSS : Qg typ. 30V 4.5m @VGS = 10V 1 8 S 2 7 S 3 6 4

Contextual Info: PD - 95292 IRF7834PbF Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free HEXFET Power MOSFET VDSS : Qg typ. 30V 4.5m @VGS = 10V 1 8 S 2 7 S 3 6 4

Contextual Info: PD - 95211A IRF7807ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance