CI 7456 Search Results

CI 7456

Abstract: 44 128
Contextual Info: DATE REV ECN APP'D. BY 2/1/06 A2 7456 JM B s o ci |— .135 [3.43] MAX T NOTES: 1. CONNECTOR MATERIALS: |— .503 [12.78] MAX -*3.536 [B9.B1]- HOUSING: .125 [3.17]±.Û1 Û [0.25] THERMOPLASTIC UL94 V -0 CONTACTS/SHIELD: COPPER ALLOY SHIELD PLATING: NICKEL OR TIN

74374

Abstract: 74574 HCT 74576 74575 ALSB76 74576
Contextual Info: - 74576 263- Octal 3-State D-FFs Inverted Vcc Q0 5T Iff Q3 5? Q5 Q6 T37 CLO CK J 2 o1 4 T # 1 J 7 7 | J 7 7 1 ^ ^ 7 1 ,i J o e 3 OE Q O E Q OE 3 OE 1 d c,k d c.k 1 ! L L m n L 01 01 PTPOT DO (3JNTRCC q CK dck 1 r u 02 | m 03 CaK I I I 1 i OE Q OE Q OE .CK

BKC Semiconductors

Abstract: tag 8944 TR 13003 lnk 304 pn
Contextual Info: Introduction 1 Functional Description 2 System Operation 3 MC92501 External Interfaces 4 MC92501 Data Path Operation 5 MC92501 Protocol Processing Support 6 MC92501 Programming Model 7 Test Operation 8 MC92501 Product SpeciÞcations 9 UPC/NPC Design A Maintenance Slot Calculations

74008

Abstract: 74067 74004 74016 74220 c 74067 cI 74150 74470 ci 74390 74006
Contextual Info: •'<% SILICON TUNING VARACTORS / This series o f high tuning ratio e pi-ju nctio n m icro w a ve tuning varactors 90 V incorporates a passivated mesa te ch n o lo g y. It is well suited for fre q u e n cy tuning a p p lica tio n s up to L b an d . CHIP AND

M58LT128HSB

Abstract: CR10 M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

CR10

Abstract: M58LT128HSB M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

CR10

Abstract: M58LT256JSB M58LT256JST
Contextual Info: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O Buffers – VPP = 9 V for fast program

Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

CR10

Abstract: 4047N
Contextual Info: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)

Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

CR10

Abstract: M58LR128HB M58LR128HT VFBGA56
Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program

BP 109

Abstract: CR10 M58LR128HB M58LR128HT VFBGA56
Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program

M58LT128HB

Abstract: M58LT128HT CR10 VFBGA56 026h
Contextual Info: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

M58LR128GL

Abstract: M58LR128GU M58LR256GL M58LR256GU VFBGA44 882F
Contextual Info: M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit x16, Mux I/O, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

M58LT256GT1ZA

Abstract: M58LT256G M58LT256GT m58lr256 CR10
Contextual Info: M58LT256GT M58LT256GB 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory Features summary • ■ Supply voltage – VDD = 1.7V to 2.0V for Program, Erase and Read – VDDQ = 2.7V to 3.6V for I/O buffers – VPP = 9V for fast program

XCF128XFTG64C

Abstract: XCF128XFT64C xilinx jtag cable xcf128x XC5VLX330 DS617
Contextual Info: R 9 Platform Flash XL High-Density Configuration and Storage Device DS617 v2.2 October 29, 2008 Preliminary Product Specification Features • In-System Programmable Flash Memory Optimized for Virtex -5 FPGA Configuration • High-Performance FPGA Bitstream Transfer up to

HDT722525DLA380

Abstract: ST3250824AS HDT72502 a63a ST3300555SS ST9146803SS western digital sata WD5002ABYS-01B1B0 HDE721010SLA330 HDP72503
Contextual Info: End User Center of Competence Interoperability Report for MegaRAID 6Gb/s SAS Controllers This represents basic compatibility and is only a guide to hardware which is known to function with the listed MegaRAID SATA+SAS controllers. July 2009 The End User Center of Competence performs comprehensive functionality testing in order to demonstrate compatibility of the MegaRAID

A0-A21

Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
Contextual Info: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

VFBGA60

Abstract: CR10 M58WR128EB M58WR128ET
Contextual Info: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

CR10

Abstract: J-STD-020B M58LR128GB M58LR128GT VFBGA56
Contextual Info: M58LR128GT M58LR128GB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

9702H

Abstract: CR10 JESD97 M58LT128GSB M58LT128GST
Contextual Info: M58LT128GST M58LT128GSB 128Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V supply Secure Flash memories Features Summary • ■ Supply voltage – VDD = 1.7 to 2.0V for program, erase and read – VDDQ = 2.7 to 3.6V for I/O Buffers – VPP = 9V for fast program

CR10

Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0
Contextual Info: M30L0R7000T0 M30L0R7000B0 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

117h68

Abstract: CR10 J-STD-020B
Contextual Info: M30L0R7000T1 M30L0R7000B1 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

a6583

Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers