CI 386 D Search Results

U18 524

Contextual Info: B Y i â i C a n H D MICRON D I TECHNOLOGY. INC. 2805 East C olu m bia Road z^txIVI"T88512DN/ MT89512DN / ’ /W(5VK x 8 BIT DYNAMIC RAM /r '" -'^Ci^r>lr x v °9 DIT n vM A uir RAM dam * , vfe08X^12K BIT DYNAMIC Boise, Idaho 83706 TEL. (208 386-3900 Y TW X 910-970-5973

5118 ericsson

Abstract: MN5000 smd resistor 2491
Contextual Info: E Ericsson Internal PRODUCT SPECIFICATION Prepared also subject responsible if other EBOZHAO Approved 1 (4) No. 1/1301-BMR656 5118 Checked TechnicalReference Specification Date Rev PMN 5000 SEC/D (Juliaseries You) 2011-10-18 DC/DC regulator, Input 4.5-5.5 V, Output 30 A/108 W

I.T.E. Power Supply 306

Abstract: 9948 MB89123R
Contextual Info: IC dependence of oscillating characteristics MB89123R. FCR4.0MC5 - STD Itra a. IC N O N . CV] V2H/V2L V1H/V1L 5.9 358 386 b. CV] 6 / 5.5 -.8 / ‘.1 Room Temp. Vdd CV] e. [Ufa] Fo«c d. CuS] Trite e. 5 »3 Item a~e> f. M 8> CV] Duty Vittrt Vhold 4.8888 46.8

T2D 53

Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
Contextual Info: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In

CSB500E5

Abstract: BA7004 tv pattern generator ic tv pattern generator cost of tv pattern generator CSB500E Horizontal frequency kHz 15.625
Contextual Info: Video ICs Test pattern generator •Features 1 Few external components required. 3)Good temperature stability. 2)Provides an accurate video signal without adjustment. •B lo ck diagram GND Vcc 3 1 •Absolute maximum ratings Ta=25°C) Parameter Power supply voltage

80287 microprocessor block diagram and pin diagram

Contextual Info: irrtel' MILITARY 387 SX MATH COPROCESSOR Military • Interfaces with Military 3 8 6 tm SX Microprocessor ■ Expands Military 386 SX CPU Data Types to Include 32-, 64-, 80-Bit Floating Point, 32-, 64-Bit Integers and 18-Digit BCD Operands ■ High Performance 80-Bit Internal

23C160

Contextual Info: GM23C16050 2M x8/lM x 16BIT GoldStar CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description The GM23C16050 high performance read only memory is organized either as 2,097,152x8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The GM23C16050

CM04RC04

Abstract: CM04RC08T CM04RC01 Common Mode Choke taiyo yuden BU05MC02 BU05MC02T CM04RC05T CM03MS CM04RC05
Contextual Info: 3 Ï SMD£<7° COMMON MODE CHOKE COILS FOR DC AND SIGNAL LINES SMD TYPE O PERATIN G TEM P. t -25~+105°C (Mpnp g E f £ t & £ # t ; ) v (Including self-generated heat) 4 Lines Type Equivalent circuits -.ifcs-. CM03MS • iïifê'ê'fêjst-J; U y —'e JU í — KY > b: —

capacitor chip 685 35K

Abstract: capacitor 685 35K 685 35K Nippon capacitors CF5741AA CF5741AB CF5741BA CF5741BB alarm clock IC reverse motor clock
Contextual Info: CF5741 series Analog Clock CMOS IC NIPPON PRECISION CIRCUITS INC. OVERVIEW PINOUT The CF5741 series are analog clock driver ICs using 32.768kHz reference frequency of crystal oscillator. Some versions in accordance with the combinations of each motor drive and alarm output

esja52

Abstract: ESJA52-10 CKV15 I/ESJA52-10
Contextual Info: E S J A 5 2 1 0 k V , 12kV, 14kV *±' B g • j g g f t y -i * — v : O utline D raw ings HIGH VOLTAGE SILICON DIODE S !» it* R ttiliJiB iE - ;u K S ! a E S } iilE y > f + - K T to E S JA 52 is h ig h re lia b ility resin m o ld e d typ e h ig h vo lta g e

KM718B90

Abstract: 52-PLCC-SQ
Contextual Info: KM718B90 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • The KM718B90 is a 1,179,648 bit Synchronous Static Random Access Memory designed to support 66MHz of Intel secondary caches. It is organized as 65,536 words

TRANSISTOR BO 345

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

PS8731

Abstract: A115-A PI74AUC16244 PI74AUC16244A PI74AUC16244K
Contextual Info: PI74AUC16244 1.8V 16-Bit Buffer/Driver with 3-State Outputs Features Description • PI74AUC16244 is designed for low-voltage operation, VCC = 0.8V to 2.7V, optimized at 1.8V. Pericom Semiconductor’s PI74AUC series of logic circuits are produced using the Company’s advanced submicron CMOS

Contextual Info: TPS76130, TPS76132, TPS76133, TPS76138, TPS76150 LOW-POWER 100-mA LOW-DROPOUT LINEAR REGULATORS SLVS178B – DECEMBER 1998 – REVISED MAY 2001 D D D D D D D D DBV PACKAGE TOP VIEW 100-mA Low-Dropout Regulator Fixed Output Voltage Options: 5 V, 3.8 V, 3.3 V, 3.2 V, and 3 V

PCM-4 wandel

Abstract: AM79C202
Contextual Info: 1 ASLACIFG Software Revision H & The ASLAC Interface Boards Rev A Single-DUT & Rev C For use with Am79C202 Advanced Micro Devices Communication Products Division Austin, Texas ASLACIFG Rev H H 2 HARDWARE Introduction The ASLAC Interface Board (ASLACIF board) serves to connect the GCI interface

TPS76301

Abstract: TPS76316 TPS76318 TPS76325 TPS76327 TPS76328 TPS76330 TPS76333 TPS76338 TPS76350
Contextual Info: TPS76301, TPS76316, TPS76318, TPS76325, TPS76327 TPS76328, TPS76330, TPS76333, TPS76338, TPS76350 LOW-POWER 150-mA LOW-DROPOUT LINEAR REGULATORS SLVS181F – DECEMBER 1998 – REVISED MAY 2001 D D D D D D D D DBV PACKAGE TOP VIEW 150-mA Low-Dropout Regulator

pbei

Abstract: TPS76327 TPS76328 TPS76330 TPS76333 TPS76338 TPS76350 TPS76301 TPS76316 TPS76318
Contextual Info: TPS76301, TPS76316, TPS76318, TPS76325, TPS76327 TPS76328, TPS76330, TPS76333, TPS76338, TPS76350 LOWĆPOWER 150ĆmA LOWĆDROPOUT LINEAR REGULATORS www.ti.com SLVS181G − DECEMBER 1998 − REVISED NOVEMBER 2003 D 150-mA Low-Dropout Regulator D Output Voltage: 5 V, 3.8 V, 3.3 V, 3.0 V, 2.8 V,

2N9860

Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

Contextual Info: www.ti.com TPS76301ĆQ1, TPS76316ĆQ1, TPS76318ĆQ1, TPS76325ĆQ1, TPS76327ĆQ1 TPS76328ĆQ1, TPS76330ĆQ1, TPS76333ĆQ1, TPS76338ĆQ1, TPS76350ĆQ1 LOWĆPOWER 150ĆmA LOWĆDROPOUT LINEAR REGULATORS SGLS247 − JUNE 2004 D Qualification in Accordance With

Contextual Info: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

sma 42056

Abstract: H331 ECUV1H330JCG panasonic ECU-V1 RF2104 ECSH1CC106R CE CAPACITOR PANASONIC Panduit ECU-V1H101JCG panasonic ce series Capacitor
Contextual Info: RFEÜ RF2104 M ICRO-DEVICES MEDIUM POW ER A M PLIFIER T y p ic a l A p p lic a tio n s • Portable Battery Powered Equipment • 400M Hz Industrial Radios • Commercial and Consumer Systems • Driver for Higher Power Applications • Base Station Equipment

2 Megabit

Contextual Info: a Advanced Micro Devices Am27X2048 2 Megabit 131,072 x 16-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed - Lower cost ■ As a Mask ROM alternative:

pbei

Abstract: TPS76301 TPS76316 TPS76318 TPS76325 TPS76327 TPS76328 TPS76330 TPS76333 TPS76338
Contextual Info: TPS76301, TPS76316, TPS76318, TPS76325, TPS76327 TPS76328, TPS76330, TPS76333, TPS76338, TPS76350 LOWĆPOWER 150ĆmA LOWĆDROPOUT LINEAR REGULATORS www.ti.com SLVS181H − DECEMBER 1998 − REVISED JANUARY 2004 D 150-mA Low-Dropout Regulator D Output Voltage: 5 V, 3.8 V, 3.3 V, 3.0 V, 2.8 V,

Contextual Info: PD - 96315B AUIRF7737L2TR AUIRF7737L2TR1 AUTOMOTIVE GRADE Automotive DirectFET™ Power MOSFET ‚ V BR DSS 40V • Advanced Process Technology RDS(on) typ. • Optimized for Automotive Motor Drive, DC-DC and 1.5mΩ other Heavy Load Applications max. 1.9mΩ