CI 356 J Search Results

sw 2604 ic

Abstract: UPSC4 AI84 marking 8206 ic sw 2604
Contextual Info: ~Mini.Circuits 50 ohms cnd 75 ohms 42KI-tzto4.2GH~ WAY-00 e PSC-4 ZFSC-4 FREQ ~A.NGE MHz M006. NO. PSC—4 PSC-4-l case AOl PSC—4—IW upsC-4-4-7s 15C4—3 PSC—d—8 •PSC-4-4 PSC-AA PSC-4A-4 ~e c137.PSC—4A-478 ZBSC-4 L f~.-L~ o I-2~ I-sw 1-2w o 25-250

Contextual Info: K D MDIMTES m km l DATA CONTAINED IN T H » OOCLHB/T IS PROPRIETARY TO TBQHPETSt B-ECTTgUICS INC. AMJ SHALL WJT BE OISODSBJ, CEPIH3 DR USED R S p i x n œ e / r dr h a h jf ac tu * v i t k u t S MOTTO PBWISSION, DASH ND -2C -2T -4 C -4T -2CS -2TS MCS -4TS

Contextual Info: T-13/4 InG aA lP U ltra Bright LED Ultra Bright L E D s High Perform ance ITLGA247 Product Featu res • InGaAlP Technology • J-V/* 5 mm Package • High Intensity Green Light (A.p = 574 nm) Emission • Water Clear Lens • Elliptical Radiation Pattern (60° Horizontal, 30°

EDI8F321024C

Contextual Info: EDI8F321024C 1024Kx32 SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.

Contextual Info: GREEN T - I V4 U l t r a B r i g h t L E D Ultra Bright LE D s High P e rfo rm a n c e ITLGD240P $ in JS- P roduct Featu res • G a P T ech n o lo g y ' • T1 ’/« 3 mm P ackag e • H igh Intensity G ree n Lig h t (>.p = 567 nm) E m is s io n • W ater C le a r Le n s

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: Single side polished Si
Contextual Info: AUSTIN SEMICONDUCTOR INC bOE i> m T0Ü2117 D DQG 33 ci IMb M A U S T MT5C2516 DIE 16K x 16 LATCHED SRAM MICRON -T - 4 f c - 2 4 - l 3 MILITARY SRAM DIE 16K x16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • Fast access times: 20,25 and 35ns

Contextual Info: EDI8F321024CA 1024Kx32 SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024CA is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.

EDI8F321024C

Contextual Info: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES  DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ

Contextual Info: EDI8G321024V 1024Kx32 SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features 1024Kx32 bit CMOS Static Random Access Memory • Access Times: 12, 15, 17, and 20ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package

SLIC DIAGRAM

Abstract: br06 BR08 plc array Bc600 OR3T125 OR3T20 OR3T30 ORCA Series 3C ORCA Series 2
Contextual Info: Product Brief January 2002 ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, 0.35 µm and 0.3 µm 4-level metal technology 4- or 5-input look-up table delay of 1.2 ns with -7 speed grade in 0.3 µm .

E80276

Abstract: TM20RA-M
Contextual Info: TM20RA-M,-H m m m m TM 20RA - M ,- H r f i • lT AV 20A • i f ( a v ) s m m w m .2 o a • V rrm b0” ^ # 3 E L / ^ ^ J E E .^-OO/SOON/

sod1c

Abstract: SN74HC356
Contextual Info: SN54HC356, SN74HC356 8-LINE TO M IN E DATA SELECTORS/MULTIPLEXERS/ EDGE TRIGGERED REGISTERS WITH 3-STATE OUTPUTS _ • Transparent Latches on Data Select Inputs • Edge-Triggered Data Registers • High-Current 3-State Outputs Can Drive Up

Contextual Info: S i GEC P L E S S E Y SEPTEMBER 1995 SEMICONDUC TOR S DS4303-1.2 DF685 FAST RECOVERY DIODE KEY PARAMETERS 4500V 445A Jf AV 4500A FSM 650(lC Or APPLICATIONS vRRM • Snubber Diode For GTO Applications. 5|iS FEATURES ■ Double Side Cooling. ■ High Surge Capability.

Contextual Info: AP A d va n ce d P e rfo rm a n c e Series Voss = 4 5 0 V 2078 N Channel Power MOSFET 3449 F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Micaless package facilitating easy mounting. bsolute M axim um R atin g s a t Ta = 25°C

el 803

Contextual Info: A U S T IN SEMICONDUCTOR IN C hQZ D T 0 0 5 1 1 7 OOGOS^O 1R3 « A U S T M T 5 8 C 1 6 1 8 D IE 1 6K X 18 S Y N C H R O N O U S S R A M MICRON T MILITARY SRAM DIE 4 f c - Z .V & 16K x 18 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • •

EUPEC T 821

Contextual Info: EUPEC 52E D 34032*57 0000550 bbT « U P E C A 358 S - Typenreihe/Type range Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V 15 V 50 V Itrm sm Itavm Itsm /i2dt di/dt cr (dv/dt)cr tp = 1 MS tc = 85°C to = 59°C tp = 10 ms, tv| < 45°C

transistor C 2240

Abstract: cdi unit c 2240 DIO64
Contextual Info: Ordering number: EN 6157 CMOS IC LC7940YC,7941YC Dot-matrix LCD Drivers Overview The LC7940YC and LC7941YC are segment driver ICs for driving large, dot–matrix LCD displays. They read 4– bit parallel or serial input, display data from a controller into an 80–bit latch, and then generate LCD drive signals

Contextual Info: HI-8045 September 1999 GENERAL DESCRIPTION APPLICATIONS The HI-8045 high voltage display driver is a low cost plastic, 80-segment version of the Holt HI-8040 display driver series. The 20 mil package lead pitch allows the maximum number of display driver segments in the smallest space. All

Contextual Info: Bulletin 12018/A International SägRectifier 25F R SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Avalanche types available Stud cathode and stud anode version W ide current range T ypes up to 1200V VRRM Typical Applications

C2818

Contextual Info: A U ST IN S E M I C O N D U C T O R INC bOE D • 'îDDSll? 0 0 0 G 35 7 =ibl « A U S T MICRON 16K X MT5C2818 DIE 18 LATCHED SRAM 'T 'M MILITARY SRAM DIE f e '2 3 - O 16Kx 18 SRA M WITH ADDRESS/ DATA INPUT LATCHES FEATURES DIE OUTLINE (Top View OPTIONS

VEB mikroelektronik

Abstract: E355D D410D mikroelektronik DDR E351D DDR Schaltkreise Transistoren DDR E412D elektronik DDR E345D
Contextual Info: ^ o n ij- c B ip o la r e reise Bipolare digitale Schaltkreise Dekoder, Treiber, Timer Inhaltsverzeichnis Seite Typenübersicht 5 Kurzzeichenübersicht 6 Technische Erläuterungen 7 - Zuverlässigkeit 8 - Definitionen 9 - G renz- und Betriebswerte 12 - Einbau- und Lötvorschriften

AA121SJ03

Abstract: LP141X5 lt141x LT141 samsung ITSV53C L133x2 TM121SV-02L04 AKM4543 tx36d CLEVO
Contextual Info: I S .4 s u i B j ß e ; p o i ; e t u i | o 3 v lì? 7 ~jOU li? I £¿24 ~jlCU Ç423 L 356 I c w j m I 349T : ~I~7U~ÍT?ü~jÜU~ji~?U ~ p U ~|Tl ]c<09 |c3^< c33<]c329)c332JJ ?Tí-f = | VCC.CORE -À=IC14 y]c371 jc285Íc355 j.C4?S i C315 VCC.gORE J ~ 22UC.Z06)

sj1c

Abstract: 00-K-220 1S75 GT31 FCO 202 BC137 N203 277 Hall Effect hall 503 112
Contextual Info: I *CD. SUP CLbS1 5315 +.000 A c -.010 v, — •1 + h ~ 2 LIMITS FOR D1MEN51ONS C Ah~ D NOM1tiAL 1/16 X 1/16 3/32 x 3/32 1/8 X 1/8 3/16 SIZE X x 1/4 5/16 X 3/0 5/16 x MAXIMUM ,0635 .0946 .126 .1885 .251 .3135 .376 MINIMUM ,0625 .0937 .125 .1S75 .250 .3125

Contextual Info: GREEN T-13/4 InG aA lP U ltra Bright LED T LPG A 1 5 9 P Product Featu res • InGaAlP Technology • T-15/* 5 mm Package • High Intensity Green Light (A.p = 562 nm) Emission • Water Clear Lens MAXIMUM RATINGS (Ta = 2 5 X ) RATING UNIT Forward Current