CHN 220 DIODE Search Results

ST CHN 226

Abstract: CHN 220 diode
Contextual Info: March 23, 2011 IRS2052MPbF 2 CH Digital Audio Amplifier Features • • • • • • • • • • • Product Summary 2 channel integrated analog input Class D audio amplifier driver Versatile protection control enabling latched, non-latched, or host controlled

DIODE N1100

Abstract: IRS2092 CHN 220 diode IRS2052M
Contextual Info: January 28th, 2011 IRS2052MPbF 2 CH Digital Audio Amplifier Features • • • • • • • • • • Product Summary 2 channel integrated analog input Class D audio amplifier driver Versatile protection control enabling latched, non-latched, or host controlled

CHN 220 diode

Abstract: IRS2092 audio amplifier circuit diagram MLPQ48 ST CHN 226 X2B marking CHN 125 IRS2052M VX2B CHN 51 irs2092
Contextual Info: March 23, 2011 IRS2052MPbF 2 CH Digital Audio Amplifier Features • • • • • • • • • • • Product Summary 2 channel integrated analog input Class D audio amplifier driver Versatile protection control enabling latched, non-latched, or host controlled

CHN 234 diode

Abstract: dali master schematic GRM188B31H104KA92D DMX RECEIVER diode chn 115 dali power supply circuit diagram dmx512 RK73B1 chn 711 dali schematic
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

CHN 747

Abstract: oms 450 DIODE RK 306 CHN 450 E72873 MDD220-06N1 MDD220-08N1 MDD220-12N1 MDD220-14N1 rectifier bridge VU
Contextual Info: H71 B IIX Y 4t>flb22b 000171A n iX Y S Diode Modules MDD220 iTAV= 2 x 270 A VRRM = 600-1600 V Vmm V rm , Type V V Version 1 700 900 1300 1500 1700 600 600 1200 1400 1600 M D D 220-08N1 M D D 220-08N 1 M D D 220-12N 1 / z k S - M D D 220-16N1 Sym bol T e s t conditions

SCR PIN CONFIGURATION CHN 035

Abstract: AD7912 AD7912ARM AD7922 DB10 VT235 16t5t
Contextual Info: PRELIMINARY TECHNICAL DATA a Preliminary Technical Data FEATURES Fast Throughput Rate: 1MSPS Specified for VDD of 2.35 V to 5.25 V Low Power: 3.6 mW typ at 1MSPS with 3V Supplies 12.5mW typ at 1MSPS with 5V Supplies Wide Input Bandwidth: 71dB SNR at 100kHz Input Frequency

TSAL7400

Contextual Info: TSAL7400 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package Description T S A L7400 is a high efficiency infrared em itting diode in G aAIAs on G aAs technology, m olded in clear plastic packages. In com parison w ith the standard G aAs on G aAs

diode chn 940

Abstract: chn 940 TSAL6400 L6400
Contextual Info: TSAL6400 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package Description T S A L6400 is a high efficiency infrared em itting diode in G aAIAs on G aAs technology, m olded in clear, bluegrey tinted plastic packages. In com parison w ith the standard G aAs on G aAs

7600S

Abstract: OP550 OP560 SQ63 0P550
Contextual Info: OPTEK TE CHN OLO GY D | t 7 c1âSflO GOO OIEO INC DtE Optoelectronics Division T R W Electronic Components Group T - m i-i3 - Product Bulletin SQ63 Janu ary 198 5 1 I T‘ R w ' Y . • G a A IA s Plastic Infrared Em ittin g Diodes Types 0P240SL, QP240SLC, 0P240SLB, OP24QSLA

VT235

Abstract: AD7911 AD7921 DB10 chn 135 CHN 804 ad7802
Contextual Info: PRELIMINARY TECHNICAL DATA a 2-Channel, 2.35 V to 5.25 V, 250 KSPS,10-/12-Bit ADCs AD7911/AD7921 Preliminary Technical Data FEATURES Throughput Rate: 250 KSPS Specified for VDD of 2.35 V to 5.25 V Low Power: TBD mW typ at 250 KSPS with 3V Supplies TBD mW typ at 250 KSPS with 5V Supplies

ntc siemens

Contextual Info: SIEMENS I n  f G a A s - t a s e r D io d e 1 DO m W S FH 487401 w it h F C - c o n n e c t o r 7 6 0 m W <•;> SFH 437406 F lo ta re s Moriochfofnaiic. coherent : sei;8^co source fo; cu&se a^d cw-Qpeifaiion MGCVQ q:.iá'!Í!.i?T':-w«í¡ •Kïri.icîtir*5 ivi i fi: nêo i;:ty;>r' technology

CHN 507

Abstract: LUPA-1300-2 AN54468 CYIL2SM1300-EVAL FPN 82 LUPA1300 LUPA-1300 7B 1284 AN54214 CRC10
Contextual Info: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels FPN correction enables the sensor to output ready to use image data for most applications. To enable simple and reliable system

CHN 507

Abstract: CHN 234 diode LUPA1300-2 crc 13002 LUPA-1300-2 MEET CHN 507 chn 248 chn 630 datachannel12 AN54214
Contextual Info: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels The peak responsivity of the 14 µm x 14 µm 6T pixel is 7350 V.m2/W.s. Dynamic range is measured at 57 dB. In full frame video mode, the sensor consumes 1350 mW from the 2.5V

4N46

Abstract: CHN 220 diode
Contextual Info: OPTEK TECHNOLOGY Optoelsctronics Division TRW Electronic Components Group INC ObE D | bT^flSflO 00002713 0 | 1987 Cost Saver Product! Call TRW for more information! Product Bulletin 5248 January 1985 JT 7 ^ ml WW V S Low Input Current, High Gain Optically Coupled Isolators

LUPA-1300-2

Abstract: LUPA1300-2 AN57864 AN54468 ke63 CHN 816 Color Filter Array CFA transistor CHN 64 149 transistor CHN 64 229 -20/LUPA1300-2
Contextual Info: NOIL2SM1300A LUPA1300-2: High Speed CMOS Image Sensor Features • • • • • • • • • • • • • • • • 1280 x 1024 Active Pixels 14 mm X 14 mm Square Pixels 1.4” Optical Format Monochrome or Color Digital Output 500 fps Frame Rate

AN57864

Abstract: LUPA-1300-2 AN54468 crc 13002 144x128 FIX32 CHN 234 diode
Contextual Info: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels FPN correction enables the sensor to output ready to use image data for most applications. To enable simple and reliable system

AN57864

Abstract: LUPA1300-2 LUPA-1300-2 NOIL2SM1300A-GDC CHN 816 CHN 234 diode LUPA-1300 CHN 633 -20/LUPA1300-2
Contextual Info: NOIL2SM1300A LUPA1300-2: High Speed CMOS Image Sensor Features • • • • • • • • • • • • • • • • 1280 x 1024 Active Pixels 14 mm X 14 mm Square Pixels 1.4” Optical Format Monochrome or Color Digital Output 500 fps Frame Rate

Contextual Info: NOIL2SM1300A LUPA1300-2: High Speed CMOS Image Sensor Features • • • • • • • • • • • • • • • • 1280 x 1024 Active Pixels 14 mm X 14 mm Square Pixels 1.4” Optical Format Monochrome or Color Digital Output 500 fps Frame Rate

AN57864

Abstract: transistor CHN 64 229
Contextual Info: NOIL2SM1300A LUPA1300-2: High Speed CMOS Image Sensor Features • • • • • • • • • • • • • • • • 1280 x 1024 Active Pixels 14 mm X 14 mm Square Pixels 1.4” Optical Format Monochrome or Color Digital Output 500 fps Frame Rate

AN57864

Abstract: LUPA-1300-2 AN-525 AN52561 crc 13002 AN54468 CHN 202 diode CHN 234 diode
Contextual Info: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels FPN correction enables the sensor to output ready to use image data for most applications. To enable simple and reliable system

AN57864

Abstract: LUPA-1300-2 JESD625-A LUPA1300 AN54468 CHN 633 diode AN5256 LUPA-1300 CYIL2SC1300AA-GZDC CHN 633 Diodes
Contextual Info: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels FPN correction enables the sensor to output ready to use image data for most applications. To enable simple and reliable system

circuit diagram of pulse width modulation

Abstract: laser drivers printer AD9560 AD9561 AD9561JR
Contextual Info: a FEATURES 50 MHz Pulse Rate 8-Bit Resolution Center, Left, or Right Justify Low Power: 700 mW typical Minimum Pulse Width: <5 ns Maximum PW: 100% Full Scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM AD9561 RAMP CLOCK INTERNAL TIMING OUTPUT LOGIC

transistor TO-92 crc 13002

Abstract: transistor CHN 137
Contextual Info: CYIL2SM1300AA LUPA-1300-2 High speed CMOS Image Sensor Features n 1280 x 1024 active pixels SXGA resolution . n 14 µm2 square pixels [based on the high-fill factor active pixel sensor technology of FillFactory (US patent No. 6,225,670 and others)] n On-chip 10-bit ADCs

marking CODE 62A general

Abstract: TSM110N06CZ Diode 62a DEVICE MARKING CODE 150A N-Channel power MOSFET TL 413 TSM110N06 GENERAL SEMICONDUCTOR MARKING 62A 5642 tube
Contextual Info: $ Preliminary TSM110N 06 55V N-Channel Power MOSFET T A IW A N S E M IC O N D U C T O R pb RoHS C O M P L IA N C E TO -220 • .s i PRODUCT SUM M ARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS{on)(iYlO) Id (A) 55 8 @ Vcs=10V 62 123 G eneral Description