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    CHN 523 Search Results

    CHN 523 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD5380BSTZ-3 Analog Devices 40-Chn 5V Single Supply 14-Bit Visit Analog Devices Buy
    AD5381BSTZ-5-REEL Analog Devices 40-Chn 5V Single Supply 12-Bit Visit Analog Devices Buy
    AD5381BSTZ-5 Analog Devices 40-Chn 5V Single Supply 12-Bit Visit Analog Devices Buy
    AD5390BSTZ-5 Analog Devices 16-Chn 5V Single Supply 14-Bit Visit Analog Devices Buy
    AD5380BSTZ-5 Analog Devices 40-Chn 5V Single Supply 14-Bit Visit Analog Devices Buy

    CHN 523 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V ishay I n t e r t e chn o l o g y, I nc . Capacitors - High Reliability and Life Expectancy AND TEC I INNOVAT O L OGY HDMKP N HN VISHAY ESTA POWER CAPACITORS O 19 62-2012 Capacitors for Power Electronics Key Benefits • • • • • • High RMS current rating: up to 150 A


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    PDF 17-Mar-10 VMN-PT9067-1201

    CHN 550

    Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
    Text: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12


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    PDF 6004K12 ZNC-B10 ZN-B14 ZNC-B19 ZNC3-B22 ZNC-K19 VXI-11 CHN 550 CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent

    1/CHN 326

    Abstract: No abstract text available
    Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


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    PDF SST39SF020 1/CHN 326

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    Abstract: No abstract text available
    Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection


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    PDF SST38UF166

    CHN 512

    Abstract: CHN 314 1/CHN 852
    Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


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    PDF SST39SF512 CHN 512 CHN 314 1/CHN 852

    chn 348

    Abstract: CHN 314 chn 317 CHN 852 chn 440
    Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    PDF SST37VF020 32-Pin SST37VF020 chn 348 CHN 314 chn 317 CHN 852 chn 440

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/


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    PDF SST32LH802 128Kx16 SST32LH802

    Untitled

    Abstract: No abstract text available
    Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:


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    PDF SST39SF010

    Untitled

    Abstract: No abstract text available
    Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


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    PDF SST39VF080Q_ SST39VF080Q

    27721

    Abstract: No abstract text available
    Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


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    PDF SST39VF016Q_ SST39VF016Q Multi58-4276 27721

    oasis

    Abstract: SST39VF400 SST39VF400 read code
    Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time:


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    PDF 16-Bit) SST39VF400 oasis SST39VF400 SST39VF400 read code

    CHN 345 X

    Abstract: No abstract text available
    Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    PDF SST37VF040 32-Pin SST37VF040 CHN 345 X

    CHN 602

    Abstract: CHN 847
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020


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    PDF SST29EE020 SST29LE020 SST29VE020 CHN 602 CHN 847

    CHN 847

    Abstract: chn 734
    Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption


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    PDF SST29EE010 SST29LE010 SST29VE010 and-1102 CHN 847 chn 734

    Untitled

    Abstract: No abstract text available
    Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    PDF SST37VF512 32-Pin SST37VF512 pro-657-0204

    Untitled

    Abstract: No abstract text available
    Text: f r 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • Uniform 32 KWord blocks Fast Read Access Time: - • Uniform 2 KWord sectors


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    PDF 16-Bit) SST39VF200

    TEKELEC te 306

    Abstract: 30601
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A


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    PDF SST29EE020A SST29LE020A SST29VE020A Reliability526-1102 TEKELEC te 306 30601

    actron ab

    Abstract: 11a18 CHN 949 VF800
    Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


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    PDF 16-Bit) SST39VF800Q SST39VF800 SST39VF800Q actron ab 11a18 CHN 949 VF800

    CHN 329

    Abstract: DP 904C
    Text: 21Ü 16 Megabit 1M x 16-Bit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information FEATURES: • Organized as 1 M X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


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    PDF 16-Bit) SST39VF160Q SST39VF160 SST39VF160Q CHN 329 DP 904C

    chn 347

    Abstract: No abstract text available
    Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    PDF SST37VF010 32-Pin SST37VF010 chn 347

    Untitled

    Abstract: No abstract text available
    Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)


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    PDF SST29EE512A SST29LE512A SST29VE512A SST29EE512A SST29LE512A SST29EE512A/29LE512A/29VE512A

    Ff-352

    Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
    Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •


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    PDF 16-Bit) SST39LH160Q SST39LH160 SST39LH160Q Ff-352 Ff352 HE 301 chn 511 CHN 549 chn 440

    CHN 949

    Abstract: tr/pcb-2-1/TRANSISTOR chn 602
    Text: 21Ü 4 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH041_ Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:


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    PDF SST31LH041_ CHN 949 tr/pcb-2-1/TRANSISTOR chn 602

    CHN 519

    Abstract: CHN 524 CHN 517 CHN 523
    Text: g -c i-r -r iM C » MF TRUNK RECEIVERS & TRANSMITTERS INNOVAI INO SOLUTIONS M-986-1R2 & -2R2 MF Transceivers Teltone M-986-1R2 and -2R2 MFC Transceivers contain all the logic necessary to transmit and receive CCITT R2F forward and R2B (backward) multifrequency signals on one


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    PDF M-986-1R2 M-986-1R2 M-986-2R2 M-986-1R1 M-986 -20th 22121-20th CHN 519 CHN 524 CHN 517 CHN 523