CHIP T 409 ES Search Results

Contextual Info: Publication D/409/2 March 1984 Preliminary Information Features • FFSK M odem • Few External Parts "T- 1 5 S 3 - 0 5 • Single Chip C M O S LSI • Carrier D e tec t Facility • Low Pow er Operation • Full Duplex 1200 Baud FX409 TX OUT PUT Fig. 1 Internal Block Diagram

M5E capacitor

Abstract: cm capacitor m5e FX409 FX409L ffsk
Contextual Info: C0NSUI1ER M I C R O C I R C U I T S 4SE D 2374371a □ □ □□ S öt . 4 • CHCR Publication D/409/2 M a rc h 1984 Prelim inary In fo rm ation Features • FFSK M o d e m • F e w External Parts • S ingle Chip C M O S LSI • C arrier D e te c t Facility

D03316P-472

Abstract: up 6261 CHIP T 409 ES 20-PIN EL7564 EL7564CM EL7564CRE VJ0805Y104KXXA 330uF 35 v capacitor el75xx
Contextual Info: ES EW D Using the EL7564 Demo Board IGNS OR N ED F 5 4 D N M M E E E E L7 5 EC O Technical Brief S R T NO May 23, 2003 Introduction TB409 This demo board is operated at about 350kHz switching frequency. The input voltages are 4.5V to 5.5V. This document outlines the design consideration and lists the bill

AMI+729/829

Contextual Info: Surface Mount Multilayer Ceramic Capacitors SMD MLCCs for High Power Applications CBR Series, C0G Dielectric, Ultra High Q, Low ESR, 6.3 – 500 VDC (RF & Microwave) Overview KEMET’s CBR Series surface mount multilayer ceramic capacitors (MLCCs) in C0G dielectric feature a robust and

Contextual Info: Surface Mount Multilayer Ceramic Capacitors SMD MLCCs for High Power Applications CBR Series, C0G Dielectric, Ultra High Q, Low ESR, 6.3 – 500 VDC (RF & Microwave) Overview KEMET’s CBR Series surface mount multilayer ceramic capacitors (MLCCs) in C0G dielectric feature a robust and

ls 487

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat 4.0 3.6 0iffei 5 2 9 - ^ 6.3 27 5.9 ^ C a th o d e S F H 409 Anode (SFH 487) — (3.5) Chip position . _0.6 ,.v^ V 0.4 GEX06250 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: LOGIC DEVICES INC 5 bE D • 5 S b 5 TGS G G Q 1 1 7 G Q ■ T 64 x 8- and 9-bit FIFO with Flags + OE L8C408/409 DESCRIPTION FEATURES □ First-In/First Out FIFO using Dual-Port Memory □ Maximum Shift Rate— 45 MHz □ Asychronous and Simultaneous Read and Write

EM 4093

Contextual Info: bOE D ÔS35büS ÜQ4titi07 3 m ISIEG T^/-// SFH 409 SIEMENS INFRARED EMITTER SIEMENS AKTIENÛESELLSCHAF Package Dimensions in Inches mm Surface not flat - 204 (5 2) 177 (4 5) 024 (.6) .0 1 6 ( 4 ) 100 (2 54) .0 2 8 (7 ) 0 1 6 (4 ) f L a 1 2 2 (3 1) h w 114 (2 9 )

JY 222 M capacitor

Contextual Info: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408

sfh diode

Abstract: sfh siemens Hall Siemens
Contextual Info: SIEMENS SFH 409 INFRARED EMITTER FEATURES Maximum Ratings • Radiant Intensity Selections SFH 409-1, 6 .3 -1 2.S mW/sr SFH 409-2, 1 0 -2 0 mW/sr SFH 409-3, ¿16 mW/sr Operating and Storage Temperature Range Top, TSTe . -55° to +100“C

AN201

Abstract: DG408 DG408DJ DG408DY DG409 avo meter schematic diagram dde143
Contextual Info: Tem ic DG408/409 Siliconix 8-Ch/Dual 4-Ch High Performance CMOS Analog Multiplexers Features Benefits Low On-Resistance—rDS on : 100 & Low Charge Injection—Q: 20 pC Fast Transition Time—txRANS; 160 ns Low Power—I su p p l y : 10 (iA Single Supply Capability

avo meter schematic diagram

Abstract: AN201 DG408 DG408DJ DG408DY DG409 ci80e
Contextual Info: S ilic o n ix DG408/409 A M e m b e r o f th e TEMIC G ro u p 8-Channel/Dual 4-Channel High Performance CMOS Analog M ultiplexers Features Benefits • • • • • • • • • • • • • Low On-Resistance— it>s on : 100 Q Low Charge Injection— Q: 20 pC

74c73

Abstract: DG408DY 409DJ 408AK
Contextual Info: T em ic DG408/409 S e m i c o n d u c t o r s 8-Ch/DuaI 4-Ch High Performance CMOS Analog M ultiplexers Features Benefits Applications • L o w O n - R e s is ta n c e — r o s 0n : 1 00 Q • R e d u c e d S w itc h in g E rro rs • D a ta A c q u is itio n S y s te m s

Contextual Info: SIEMENS Preliminary data BTS409 PRO FET Description High-side switch Overtemperature protection Overload protection Short circuit protection by overtemperature protection Overvoltage protection Input protection Clamp of negative output voltage with inductive loads

417m

Abstract: MAX418ESD AX419
Contextual Info: /VXSVAAJVX 19-4739; Rev 2; 7/93 1.2\±A M ax, Single/Dual/Quad, Single-Supply Op Am ps The common-mode input-voltage range extends from the negative rail to within 1.1V of the positive supply for the singles, 1,2V for the duals and quads , and the output stage

DG408

Abstract: DG408AK DG408DJ DG408DQ DG408DY DG409
Contextual Info: DG408/409 Vishay Siliconix 8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low On-Resistance—rDS on : 100 W Low Charge Injection—Q: 20 pC Fast Transition Time—tTRANS: 160 ns

DG409DY

Abstract: DG408 DG408DJ DG408DJ-E3 DG408DY DG408DY-E3 DG409
Contextual Info: DG408/409 Vishay Siliconix 8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG408 is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address A0, A1, A2 . The

DG408

Abstract: DG408DJ DG408DJ-E3 DG408DY DG408DY-E3 DG409
Contextual Info: DG408/409 Vishay Siliconix 8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG408 is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address A0, A1, A2 . The

TC538000A

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC538000AP/AF 8M BIT 1M W O R D x 8 B IT CM O S M A S K ROM D ESCR IPTIO N The TC538000A P / A F is a 8,388,608 b its read only memory organized a s 1,048,576 words by Sbits. The TC 538000A P / A F is fabricated u sin g T oshiba’s advanced CMOS technology which provides the

SC409

Abstract: IOW24 80486* diagram circuits
Contextual Info: SYSTEM CLOCK CHIP IMISC409 CMOS LSI PLL FREQUENCY SYNTHESIZER May 1993 PRODUCT DESCRIPTION PRODUCT FEA TURES Generates All Essential Clock Signals for the Motherboards. 4V to 7V Operating Supply Range. Supports 80286,80386 and 80486 Based Designs. Integrates Keyboard Clock, CPU Clocks and Buffered

PKM2113D PINB

Abstract: PKM2113D 2113D
Contextual Info: Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other SEC/S Kevin Zhou Approved 1 (1) (4) No. 1/1301-BMR637/31 Checked Date PKM 2000D PINB Series 7/3/2009 6/2/2009 DC/DC converters, Input 18-36 V, Output 10 A/120 W

4801a 8 pins

Abstract: 4801A 1024x1 static ram EMM Semi 4kx1 static ram 4801 4096 bit static RAM 4096 bit RAM 4801ACC
Contextual Info: *» '•*«>+• »»»V' «*•»,-r/- -» „¿ ÿ î^ - rtSiÈ Em m SEM I FEA TU R ES ■ Single + 5 V Power Supply ■ 4Kx1 Organization ■ Replaces 4 1024x1 Static RAMs ■ Com pletely S tatic—No C locks or Refresh ■ 18 Pin Package ■ A cce ss/C ycle Times As Low As 400 nsec max

analog device known good die

Contextual Info: FEATURES Qualified for automotive applications High common-mode voltage range −8 V to +28 V operating at 5 V supply Buffered output voltage Gain = 20 V/V Low-pass filter 1-pole or 2-pole Excellent ac and dc performance ±1 mV voltage offset 1 ppm/°C typical gain drift

T126A

Contextual Info: SN54BCT126A, SN74BCT126A QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS SCBS252A – SEPTEMBER 1988 – REVISED APRIL 1994 • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 3-State Outputs Drive Bus Lines or Buffer