CHIP EPISTAR Search Results

epistar

Abstract: epistar chip PTD-1040 chip epistar
Contextual Info: Silicon Photodiode Chip Type: PTD-1040 Features: Unit: mil 1 PIN planar type (2) Low dark current Characteristics: (1) Size Chip size : 40 mil x 40 mil (1016±50 µm x 1016±50 µm) Chip thickness : 11 mil (280±25 µm) P bonding pad : 6.8mil (172±10 µm)

epistar

Abstract: PTD-0035 chip epistar Silicon Photodiode Chip 118mil
Contextual Info: Silicon Photodiode Chip Type: PTD-0035 Features: Unit: mil 1 PIN planar type (2) Low dark current Characteristics: (1) Size Chip size : 35 mil x 35 mil (890±25 µm x 890±25 µm) Chip thickness : 11.8 mil (300±25 µm) P bonding pad : 5 mil (127±10 µm)

epistar

Abstract: chip epistar PTD-0060 Silicon Photodiode Chip 118-mil
Contextual Info: Silicon Photodiode Chip Type: PTD-0060 Features: Unit: mil 1 PIN planar type (2) Low dark current Characteristics: (1) Size Chip size : 60 mil x 60 mil (1524±50 µm x 1524±50 µm) Chip thickness : 11.8 mil (300±25 µm) P bonding pad : 6.5 mil (165±10 µm)

epistar

Abstract: chip epistar PTR-1020 optointerrupter epistar chip E3-1200
Contextual Info: Silicon Phototransistor Chip Type: PTR-1020 Features: Unit: mil 1 High DC current/amplification factor (2) Low dark current Characteristics: (1) Size Chip size : 20 mil x 20 mil (508±25 µm x 508±25 µm) Chip thickness : 7.5 mil (190±25 µm) Emitter bonding pad : 4 mil (102±10 µm)

epistar

Abstract: PTR-1024 chip epistar epistar chip
Contextual Info: Silicon Phototransistor Chip Type: PTR-1024 Features: Unit: mil 1 High DC current/amplification factor (2) Low dark current Base Characteristics: (1) Size Chip size : 24 mil x 24 mil (610±25 µm x 610±25 µm) Chip thickness : 7.5 mil (190±25 µm) Emitter bonding pad : 6.2 mil (157±10 µm)

epistar

Contextual Info: WT-C3501DNDU High Power Light Source Product Specification Specification Total Flux Material Quantity Typical 95 lm @350mA/ Ta= 25℃ Correlated Color 6000K~7000K Temperature @350mA/ Ta=25℃ VF 3.03-3.99V @350mA/ Ta=25℃ IR WT standard Chip Epistar Resin

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Abstract: chip epistar epistar LED specification chip epistar LTL72EKEKNN-152 epistar algainP ltl72ek 02-KEE7 epistar ir led
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * High luminous intensity output. * Low power consumption. * High efficiency. * Versatile mounting on P.C. Board or panel. * I.C. Compatible/low current requirement. * Wide viewing angle. * Lead Pb free product – RoHS compliant.

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Abstract: epistar led sumitomo epoxy chip epistar specification chip epistar sumitomo silver epoxy epistar red
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * AllnGaP Red and Gap Green chips are matched for uniform light output. * T-1 3/4 type package. * Long life-solid state reliability. * Low power consumption. * Pb Free and RoHS compliant Package Dimensions

Contextual Info: Through Hole Lamp Product Data Sheet LTL30EKDFGJ Spec No.: DS20-2007-0123 Effective Date: 07/30/2009 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

epistar

Abstract: specification chip epistar epistar LED LTL30EKDFGJ sumitomo epoxy chip epistar chip epistar white LTL30EKDFGJ-004A epistar red epistar led white
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * AllnGaP Red and Gap Green chips are matched for uniform light output. * T-1 3/4 type package. * Long life-solid state reliability. * Low power consumption. * Pb Free and RoHS compliant Package Dimensions