CHIP DIODE M7 Search Results

diode D07-15

Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Contextual Info: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510

p14115

Abstract: NV6510ST P14115EJ1V0DS00
Contextual Info: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NV6510ST,NV6510SU 10 mW, 655 nm VISIBLE LASER DIODE HIGH OUTPUT POWER AND LOW CURRENT DESCRIPTION The NV6510ST and NV6510SU are AlGaInP 650 nm visible laser diodes and especially developed for DVD applications. The newly developed Multiple Quantum Well MQW LD chip, can achieve low operating current, high

Contextual Info: TOX 9003 Gallium Aluminum Arsenide _ Light Emitting Diode DESCRIPTION FEATURES High radiance GaAIAs IR LED optimized for coupling to a variety of fibers. The unique LED chip design combines high power coupling with wide bandwidth operation. • • •

Contextual Info: TIES16A Gallium Arsenide Infrared-Emitting Diode |f W Ê W KêJÊ Texas O ptoelectronics, Inc. DESIGNED TO EMIT NEAR-INFRARED RADIENT ENERGY WHEN FORW ARD BIASED • High Output Power . . . 100 m W Min at 25 °C • Hemispherically Shaped 72-Mil-Diameter Chip

PS9711

Abstract: PS9711-E3 PS9711-E4 PS9711-F3 PS9711-F4
Contextual Info: DATA SHEET PHOTOCOUPLER PS9711 HIGH NOISE REDUCTION HIGH-SPEED DIGITAL OUTPUT TYPE −NEPOC Series− 5-PIN SOP PHOTOCOUPLER TM DESCRIPTION The PS9711 is an optically coupled isolator containing a GaAlAs LED on light emitting diode input and a photodiode and a signal processing circuit on light receiving side (output side) on one chip.

Contextual Info: DATA SHEET PHOTOCOUPLER PS9711 HIGH NOISE REDUCTION HIGH-SPEED DIGITAL OUTPUT TYPE −NEPOC Series− 5-PIN SOP PHOTOCOUPLER TM DESCRIPTION The PS9711 is an optically coupled isolator containing a GaAlAs LED on light emitting diode input and a photodiode and a signal processing circuit on light receiving side (output side) on one chip.

Contextual Info: 6R1TI30Y-080 y 4 TS . y y ' f a 9 ? ^ ± y < r7 - ;e i > 3 . - u u — — DIODE and TYRISTOR MODULE • ¡ftft : Features • 13=7 X ' • a 7 Glass Passivation Chip Easy Connection • Jfeliffi Insulated Type • d i/d tiM # ^ £ Large d i/d t • d v /d tifiift* '1

Contextual Info: 70-W206NBA600SA-M788L flowBOOST 4w 600V/600A Features FlowSCREW 4w ● Symmetrical Booster ● Integrated DC-capacitor ● Low DC Inductance <5nH ● Transient Interface for optional regeneration of switching losses ● Temperature Sensor Target Applications

Contextual Info: 70-W206NBA400SA-M786L flowBOOST 4w 600V/400A Features FlowSCREW 4w ● Symmetrical Booster ● Integrated DC-capacitor ● Low DC Inductance <5nH ● Transient Interface for optional regeneration of switching losses ● Temperature Sensor Target Applications

Contextual Info: 10-FY12M3A040SH-M749F08 10-F112M3A040SH-M749F09 flow3xMNPC 1 1200V/40A Features flow1 housing ● 3 phase mixed voltage component topology ● neutral point clamped inverter ● reactive power capability 12 mm ● low inductance layout Target Applications

Contextual Info: 10-F112M3A025SH-M746F09 10-FY12M3A025SH-M746F08 datasheet flow3xMNPC 1 1200V/25A Features flow1 housing ● 3 phase mixed voltage component topology ● neutral point clamped inverter ● reactive power capability 12 mm ● low inductance layout Target Applications

3160-FH

Abstract: LDR1101 2885 light emission diodes LR 3160 LDG5171 S53S E7500 GLB2885 OLB2685 YLB2785
Contextual Info: SIEMENS AKTIEN6ESELL SCHAF M7E D • S23SbDS 002710T b « S I E G SIEM EN S SUPER-RED YELLOW GREEN OLB 2685 YLB 2785 GLB 2885 UGHTBARS Package Dimensions in Inches mm r PiN FUNCTION 80 (ZO 32) MAX. Anode b 1 40 ( 1015 ) (8 89} MAX Canea*t> Gatoder UMIC ArodeS

SFH 910

Abstract: k 4111 K SFH 910 SFH 705
Contextual Info: SIEMENS AKTIENGESELLSCHAF M7E D ñ23SbQS 0DB73Ô2 2 « S I E G S IE M E N S SFH435 GaAs INFRARED EMITTER DOUBLE EMITTING DIODE * Package: Special Case, G rey Tinted Epoxy Resin, Solder Tabs, 2.54 mm Via" Lead Spacing * Cathode M arking: Short Solder Tab

Contextual Info: Tantalum Chip Capacitors SpeedPower ll, Low ESR Ordering code: Date: B45010B107*M707 July 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: Tantalum Chip Capacitors SpeedPower ll, Low ESR Ordering code: Date: B45006B157*M707 July 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: M IT S U B IS H I HIGH SPEED CMOS M 74H C 138P /FP /D P l-O F -8 D EC O D E R /D E M U L T IP L E X E R DESCRIPTION The M74HC138 is a semiconductor integrated circuit con­ sisting of a 3-bit binary to 8-line decoder/dem ultiplexer with chip select inputs.

IC 74hc266

Abstract: 54HC 74HC M54HC266 M74HC266 EQUIVALENT 74LS266
Contextual Info: M54HC26E M74HC266 H S -C :M 0 S " INTEGRATED CIRCUITS 4iq 7 ö PRELIMINARY DATA QUAD EXCLUSIVE NOR GATE DESCRIPTION The M54/74HC266 is a high speed CMOS QUAD EXCLUSIVE NOR GATE fabricated in silicon gate C 2MOS technology. It has the same high speed perform ance of LSTTL com bined with tru e CMOS

RETICON photodiode array 512

Abstract: pn junction diode Reticon photodiode array 1024 pixel Reticon A512-O rl1024s Reticon E Series
Contextual Info: E G 8, G R E T I C O N M7E D • 3030736 0003hô2 3 - Il C fS c ifS P P T /rD A / G eneral D escription R e tic o n h a s s u c c e s s fu lly c o m b in e d the a d v a n ta g e s of

5B05

Contextual Info: SIEMENS AK TIENGE SEL LSCHAF M7E D fl53SbGS 0D573A2 2 • SIEG SIEM ENS SFH 435 GaAs INFRARED EMITTER DOUBLE EMITTING DIODE * Diametrical Radiation * High Pulse Handling Capability * Good Spectral Matching with Silicon Photodetectors DESCRIPTION The SFH 435 is a two-beam GaAs infrared

pin DIAGRAM OF IC 74ls75

Abstract: 74LS75 74HC75
Contextual Info: M54HC75 M74HC75 SGS-THOMSON Ä 7 # „ üSIDÊIMlilUiÊiriMliODÊS 4-BIT D-TYPE LATCH • HIGH SPEED tPD = 15 ns TYP. at VCc = 5V ■ LOW POWER DISSIPATION Ice = 2 ,JK (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V N IH = V N(L = 28% VCc (MIN.) ■ OUTPUT DRIVE CAPABILITY

Contextual Info: SGS-THOMSON IHHÈTTMOÈS M54HC77 M74HC77 4-BIT D-TYPE LATCH • HIGH SPEED tpD = 15 ns TYP. at VCc = 5V . £\ ■ LOW POWER DISSIPATION Ice = 2 iiA (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY VNIH = VN|L = 28% VCc (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

M74HC73

Contextual Info: M54HC73 M74HC73 SGS-THOMSON RiilDMO i[L[lÊ,Ü,[S ROD©i DUAL J-K FLIP FLOP WITH CLEAR • HIGH SPEED fMAX = 60 MHz TYP.) at VCC= 5V ■ LOW POWER DISSIPATION lCc = 2 11A (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V n i H = VNIL = 28°/o V cc (MIN.) ■ OUTPUT DRIVE CAPABILITY

Contextual Info: SbE D • 7^237 GDa^ôlô ^74 « S Ü T H f Z J S G S -T H O M S O N ^7# M54HC77 M74HC77 S 6 S-THOMSON l Zti i ’ C>7- 4-BIT D-TYPE LATCH ■ HIGH SPEED tPD = 15 ns TYP. at VCc = 5V ■ LOW POWER DISSIPATION lCc = 2 /¿A (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY