CHIP DIODE 047 Search Results

BB914

Abstract: BCW66
Contextual Info: BB914. Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio at low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity for C- V curve • High figure of merit

sot363 marking qs

Abstract: BAS16TW
Contextual Info: BAS16TW Multi-Chip Switching Diode Array Elektronische Bauelemente RoHS Compliant Product FEATURES • · · · A suffix of "-C" specifies halogen & lead-free SOT-363 Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion .055 1.40

Contextual Info: BB814. Silicon Variable Capacitance Diodes • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking • Coded capacitance groups and group matching

pin diode switch up to 10 GHz

Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant Rev. 3 Features ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer Protective Coating

Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant Rev. 3 Features ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer Protective Coating

NTE30002

Abstract: NTE30003 NTE30004
Contextual Info: NTE30002, NTE30003, NTE30004 Light Emitting Diode LED 0805 Surface Mount Description: The NTE30002 thru NTE30004 are 2.0mm x 1.2mm chip LED lamps in a 0805 surface mount type package. The High Efficiency Red source color device (NTE30002) is made with Gallium Arsenide

NTE30005

Abstract: LED-0603 NTE30006 NTE30007
Contextual Info: NTE30005, NTE30006, NTE30007 Light Emitting Diode LED 0603 Surface Mount Description: The NTE30005 thru NTE30007 are 1.6mm x 0.8mm chip LED lamps in a 0603 surface mount type package. The Super Bright Red source color device (NTE30005) is made with Gallium Aluminum

Contextual Info: NTE30005, NTE30006, NTE30007 Light Emitting Diode LED 0603 Surface Mount Description: The NTE30005 thru NTE30007 are 1.6mm x 0.8mm chip LED lamps in a 0603 surface mount type package. The High Efficiency Red source color device (NTE30005) is made with Gallium Arsenide

Schottky diode Die flip chip

Abstract: police radar detector MADS-001317-1320AG
Contextual Info: GaAs Solder Bump Flip Chip Schottky Diode MADS-001317-1320AG V1 Features • Low Series Resistance, 4 Ω • Low Capacitance, 45 fF • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Solderable Bump Die Attach Mounting Side with Solder Bumps

Contextual Info: MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance, 4 Ω Low Capacitance, 45 fF High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Solderable Bump Die Attach

police radar detector

Abstract: Schottky diode Die flip chip Schottky diode Die MADS-001317-1320AG police radar
Contextual Info: MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance, 4 Ω Low Capacitance, 45 fF High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Solderable Bump Die Attach

ca3096

Abstract: CA3096AE
Contextual Info: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

Contextual Info: InGaN-High Brightness Lumineszenzdiode 470 nm, High Power InGaN High Brightness Light Emitting Diode (470 nm, High Power) F 0470B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 6 mW @ 20 mA (im 5mm Radial Gehäuse)

48416

Contextual Info: SIEMENS SFH 484 SFH 435 GaAs INFRARED EMITTER Package Dimensions in Inches mm SFH 484 Surface not flat Chip Position .224 (5.7) .200 (5.1) ” f ’ .í' 9 i l •. I • : •; - .200(5.1) .189 (4.8) • •: w .232 (5.9) .217 (5.5) .071 (1.8) .047 (1.2)

a1t diode

Contextual Info: SIEM ENS SFH 487 GaAs INFRARED EMITTER Package Dimensions in Inches mm Surface not flat— 204 (5 2) 177(4 5) 024 ( 6) 028 ( 7) 016( 4) (X _ ¿ r T 100 (2 54) I 071 (1 8} ^047(1 2) 1 140(29) 1 061 (27} FEATURES C h a ra c te ris tic s (T A= 2 5 °C ) • Radiant Intensity Selections

LD275 led

Contextual Info: SIEMENS LD274 LD275 GaAs INFRARED EMITTER Package Dimensions in Inches mm Surfacs not flat 0 2 4 (0 6) 0 1 6 (0 4) 2 2 4 (5 7) 2 0 0 (5 1) 031 (0 6) 0 1 6 (0 4) Í \ 0 7 1 (1 8 ) 200 (5 1) 189 (4 8) T r~ Calhode 307 (7 8) * 295 (7 5) 047(1 2) 1 140(29) t 061 (27)

Contextual Info: SFH 409 SIEMENS INFRARED EMITTER Package Dimensions in Inches mm 204 (5 2) 024 ( 6) 0 1 6 (4 ) 1S7 (4 0) 141 (3 6) 028 ( 7) 0 1 6 (4 ) *122(3 1) 100 (2 54) 114(2 9) 024(6)11 071 (1 6) 047(1 2) 0 1 6 (4 )^ ^ ^ 1 140(29) 1.061 (27) FEATURES M a x im u m R atings

Contextual Info: SFH 217 SFH217F SIEMENS DAYLIGHT FILTER SILICO N PIN PHOTODIODE Package Dimensions in Inches mm .071 (1 « ) , .047 ( U p .100 (2-54) Cathode .024(06) .016(04) Chip Position .232(5.9) .216 (S 5) _J 1^039 (1,0) .031 (08)_ .020 (0.4) “ H)20(0.5) ~~T 0.200(5.1)

SFH495P

Contextual Info: SFH 495P SIEMENS GaAIAs Infrared Emitter Dimensions in inches mm Surface not flat Chip Position .024 (0.6) .018 (0.4) ~l .03 9(1.0 ) .02 0(0.5 ) .100 l - 2 0 1 (5.1) 5 189 (4.8) (2.54) j .031 (0.8) •Q71(1.8) .047(1.2) .050 (Ö.4) .15 2(3.8 5) -.132(3.35)

Contextual Info: PHOTONIC DETECTORS INC. High-Power & Current GaAs Infrared Emitters Peak Wavelength 940 nm,Type PDI-E913 PACKAGE DIMENSIONS inch mm .257 [6.5] .223 [5.7] .045 [1.1] .030 [0.8] .015 [0.38] MAX LENS CAP (WELDED) .047 [1.2] .035 [0.9] CL HEADER Ø.019 [0.5] TYP

PDI-E917

Contextual Info: PHOTONIC DETECTORS INC. High-Power & Current GaAs Infrared Emitters Peak Wavelength, 940 nm,Type PDI-E917 PACKAGE DIMENSIONS inch mm .045 [1.1] .030 [0.8] .174 [4.42] .015 [0.38] MAX LENS CAP (WELDED) .047 [1.2] .035 [0.9] CL HEADER Ø.019 [0.5] TYP 45°

a950

Abstract: A950 O
Contextual Info: SIEMENS SFH 205 SFH 205Q2 SFH 206 SILICON PIN PHOTODIODE DAYLIGHT FILTER Package Dimensions in Inches mm 1.336(34) 1.258(32) .100 (2S4) ,-Cathode .024 (.6) 016,(4) ~T~ .145(4.1) ?1»1 (3.7) .161 (4.1 .145 (3.J * =¥ .031 (.8) .016 (.4) *071 (1.8) .047 (1.2)

Contextual Info: SFH 206K SIEMENS PIN PHOTODIODE Package Dimensions in Inches mm .100 (2.54) ±=c .024 (.6) .016 (.4) 1.336(34) 1.258(32) LL TÉ? 33^ .031 (.8) JT .016 (.4) .071 (1.8) .047(1.2) Cathode .157 (4) Surface not flat _271 (6.9) .248 (6.3) .020 (.5) .012 (.3)~|

Contextual Info: SFH 225 SIEMENS SILICON PIN PHOTODIODE DAYLIGHT FILTER Package Dimensions in Inches mm 1.395(35.5) 1.317(33.5) .100 (254) .024 (0.6) 0 1 6 « 4) .020 ( . 5 ) , .012 ( .3 p | .028 (0.7) Max! f .Cathode I* .071 (1.8) r*?i "047(1.2) T — — ¡-H — .03118)