CHIP BASE LEAD PLASTIC Search Results

Contextual Info: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations

marking code k3n

Contextual Info: MMDT3906 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

Contextual Info: MMDT4403 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

Contextual Info: MMDT4401 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Low Power Amplification and Switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

mml 600

Contextual Info: BASIC ORDER UNIT itic k ic o n B Request on Order Quantity: Please note the order quantity must be in multiples of the following base quantity. ALUMINUM ELECTROLYTIC CAPACITORS Size of product Bulk | — — — — Long lead * 3 *4 Chip Type _

0805CS-080XMBC

Abstract: HBFP-0405 HBFP0420 HBFP-0420 common emitter amplifier circuit designing HBFP-04XX-2
Contextual Info: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Agilent Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420

Contextual Info: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability

1206 footprint dimension

Abstract: footprint plcc 32 0805 size footprint
Contextual Info: Low Profile Ceramic Chip Capacitors CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) ➛ NMC-E SERIES PRINTED CIRCUIT BOARD SPECIFICATIONS Z5U SPECIFICATIONS Z5U Y5V Operating Temperature Range +10oC to +85oC -30oC to +85oC Temperature Characteristics (∆C max.)

Contextual Info: SFH303 SFH303FA DAYLIGHT FILTER Siticon NPN Phototransistor Dimensions in inches mm GE006351 FEATURES • Especially suitable for applications - SFH 303:450 nm to 1100 nm - SFH 303 FA: 800 nm • High linearity • T13/ 4 (5 mm) LED plastic package • Also available on tape

variable capacitor

Abstract: air variable capacitor capacitor 47pf GPS ceramic chip 8 ohm 1w capacitor ceramic variable RF Ceramic Resistor 5W PD57045S SURFACE MOUNT RESISTOR Wire wound resistor 5W
Contextual Info: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability

diode mpg06g

Contextual Info: MPG06A, MPG06B, MPG06D, MPG06G, MPG06J, MPG06K, MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A

MPG06M

Abstract: J-STD-002 MPG06A MPG06B MPG06G
Contextual Info: MPG06A thru MPG06M Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability

capacitor 0.1uf 500v

Abstract: 945 TRANSISTOR PD57030S LDMOS 1W AN1294 PD57030 transistor 945 transistor C 945 transistor d 945
Contextual Info: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION

945 TRANSISTOR

Abstract: PD57045S
Contextual Info: PD57045 - PD57045S RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE

Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: FET SP4T Non-Reflective Switch With Integral Driver In PLCC 28 Package DC-3 GHz E3A^>ha AK002M4-47 Features Integral Driver +5V, -5V Bias Supplies; CMOS and TTL Compatible Low DC Power Consumption ~ 20 mW per Arm 28 Lead Plastic Chip Carrier PLCC Individual TTL Control for Each Port

Contextual Info: External Lead Finish for Plastic Packages For plastic packages, National Semiconductor offers two primary lead finishes: solder plate and solder dip. The component lead finish serves as a protective coating to prevent oxidation of the lead base material prior to use. The lead finish

LDMOS transistor 1W

Abstract: J-STD-020B LET9060S PD57030S AN1294 smd transistor AO capacitor 0.1uf 500v
Contextual Info: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE

945 TRANSISTOR

Abstract: PD57030S AN1294 PD57030 le5012
Contextual Info: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION

Contextual Info: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead

BFG134

Abstract: BJE 247
Contextual Info: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for