CHIP BASE LEAD PLASTIC Search Results

Contextual Info: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations

marking code k3n

Contextual Info: MMDT3906 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

Contextual Info: MMDT4403 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

Contextual Info: MMDT4401 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Low Power Amplification and Switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

mml 600

Contextual Info: BASIC ORDER UNIT itic k ic o n B Request on Order Quantity: Please note the order quantity must be in multiples of the following base quantity. ALUMINUM ELECTROLYTIC CAPACITORS Size of product Bulk | — — — — Long lead * 3 *4 Chip Type _

0805CS-080XMBC

Abstract: HBFP-0405 HBFP0420 HBFP-0420 common emitter amplifier circuit designing HBFP-04XX-2
Contextual Info: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Agilent Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420

PTH hole diameter vs lead resistor

Abstract: HBPF-0405 common emitter amplifier circuit designing W202 unconditionally stable HBFP-04XX-2
Contextual Info: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420

VTT9102

Abstract: VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106
Contextual Info: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted

Contextual Info: Package Drawings and Dimensions 8 Lead Plastic Dual Inline Package PDIP – .300" Body Width Inches Symbol Notes: Millimeters Notes Min. Max. Min. Max. A A1 — .015 .210 — — .38 5.33 — A2 B B1 C .115 .014 .045 .008 .195 .022 .070 .014 2.93 .36 1.14

Contextual Info: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability

0805 footprint dimension

Abstract: 1206 footprint dimension 1210 footprint
Contextual Info: Low Profile Ceramic Chip Capacitors CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) ➛ NMC-E SERIES PRINTED CIRCUIT BOARD SPECIFICATIONS Z5U SPECIFICATIONS Z5U Y5V Operating Temperature Range +10oC to +85oC -30oC to +85oC Temperature Characteristics (∆C max.)

1206 footprint dimension

Abstract: footprint plcc 32 0805 size footprint
Contextual Info: Low Profile Ceramic Chip Capacitors CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) ➛ NMC-E SERIES PRINTED CIRCUIT BOARD SPECIFICATIONS Z5U SPECIFICATIONS Z5U Y5V Operating Temperature Range +10oC to +85oC -30oC to +85oC Temperature Characteristics (∆C max.)

Contextual Info: SFH303 SFH303FA DAYLIGHT FILTER Siticon NPN Phototransistor Dimensions in inches mm GE006351 FEATURES • Especially suitable for applications - SFH 303:450 nm to 1100 nm - SFH 303 FA: 800 nm • High linearity • T13/ 4 (5 mm) LED plastic package • Also available on tape

variable capacitor

Abstract: air variable capacitor capacitor 47pf GPS ceramic chip 8 ohm 1w capacitor ceramic variable RF Ceramic Resistor 5W PD57045S SURFACE MOUNT RESISTOR Wire wound resistor 5W
Contextual Info: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

diode mpg06g

Contextual Info: MPG06A, MPG06B, MPG06D, MPG06G, MPG06J, MPG06K, MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A

MPG06M

Abstract: J-STD-002 MPG06A MPG06B MPG06G
Contextual Info: MPG06A thru MPG06M Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability

GaAsTEK

Contextual Info: 3.6V 0.5W RF Power Amplifier IC for DECT ITT2206GJ Preliminary FEATURES • • • • • • • • Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 to 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package

capacitor 0.1uf 500v

Abstract: 945 TRANSISTOR PD57030S LDMOS 1W AN1294 PD57030 transistor 945 transistor C 945 transistor d 945
Contextual Info: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION

d5703

Abstract: SMD surface mount transistor BR PD57030S d57030s 945 TRANSISTOR transistor d 945 AN1294 PD57030 transistor C 945 capacitor 0.1uf 500v
Contextual Info: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

IN 4007 data sheet

Abstract: DO-204AL UF4004 UF4005 UF4007
Contextual Info: UF4001 - UF4007 Pb RoHS 1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers COMPLIANCE DO-41/DO-204AL Features — — — — — — — — Plastic package has Underwriters Laboratory Flammability Classification 94V0 O 1.0 ampere operation at TA=55 C with no thermal

IC A 2388

Abstract: 647c dead bug 780 AC phoenix contacts 30 03 34 7 socket 940 4166 ic equivalent
Contextual Info: Burn-In Test Sockets 647 Series A&C Plastic Leaded Chip Carrier Socket • • • • • • Direct entry with Zero Insertion Force Series 647A dead bug device insertion Series 647C live bug device insertion Heat evenly dissipates on all four sides Designed-in contact over-stress protection

Contextual Info: UF4001-UF4007 1.0AMP. Glass Passivated High Efficient Plastic Rectifiers DO-41 / DO-204AL Features Plastic package has Underwriters Laboratory Flammability Classification 94V0 O 1.0 ampere operation at T A =55 C with no thermal runaway Glass passivated chip junction

945 TRANSISTOR

Abstract: PD57045S
Contextual Info: PD57045 - PD57045S RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: MPG06A thru MPG06M Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability