CHIP BASE LEAD PLASTIC Search Results

MS450RAB-823JSZ

Contextual Info: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations

Contextual Info: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations

TEST+INSTRUMENTS+4192A+Impedance+Analyzer

Contextual Info: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations

marking code k3n

Contextual Info: MMDT3906 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

Contextual Info: MMDT4403 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

Contextual Info: MMDT4401 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Low Power Amplification and Switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

mml 600

Contextual Info: BASIC ORDER UNIT itic k ic o n B Request on Order Quantity: Please note the order quantity must be in multiples of the following base quantity. ALUMINUM ELECTROLYTIC CAPACITORS Size of product Bulk | — — — — Long lead * 3 *4 Chip Type _

XD250

Abstract: mml 600 100VD
Contextual Info: nîcKîcon BASIC ORDER UNIT • R e q u e st on O rd e r Q ua ntity: Please note the order quantity must be in multiples of the following base quantity. SOLID ORGANIC POLYMER ALUMINIUM ELECTROLYTIC CAPACITORS Size of product Lonq Lead Bulk I i 6 .3 X 6 Chip

0805CS-080XMBC

Abstract: HBFP-0405 HBFP0420 HBFP-0420 common emitter amplifier circuit designing HBFP-04XX-2
Contextual Info: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Agilent Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420

PTH hole diameter vs lead resistor

Abstract: HBPF-0405 common emitter amplifier circuit designing W202 unconditionally stable HBFP-04XX-2
Contextual Info: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420

HBPF-0420

Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
Contextual Info: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420

VTT9102

Abstract: VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106
Contextual Info: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted

Contextual Info: Package Drawings and Dimensions 8 Lead Plastic Dual Inline Package PDIP – .300" Body Width Inches Symbol Notes: Millimeters Notes Min. Max. Min. Max. A A1 — .015 .210 — — .38 5.33 — A2 B B1 C .115 .014 .045 .008 .195 .022 .070 .014 2.93 .36 1.14

Contextual Info: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability

1206 footprint dimension

Abstract: footprint plcc 32 0805 size footprint
Contextual Info: Low Profile Ceramic Chip Capacitors CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) ➛ NMC-E SERIES PRINTED CIRCUIT BOARD SPECIFICATIONS Z5U SPECIFICATIONS Z5U Y5V Operating Temperature Range +10oC to +85oC -30oC to +85oC Temperature Characteristics (∆C max.)

Contextual Info: SFH303 SFH303FA DAYLIGHT FILTER Siticon NPN Phototransistor Dimensions in inches mm GE006351 FEATURES • Especially suitable for applications - SFH 303:450 nm to 1100 nm - SFH 303 FA: 800 nm • High linearity • T13/ 4 (5 mm) LED plastic package • Also available on tape

variable capacitor

Abstract: air variable capacitor capacitor 47pf GPS ceramic chip 8 ohm 1w capacitor ceramic variable RF Ceramic Resistor 5W PD57045S SURFACE MOUNT RESISTOR Wire wound resistor 5W
Contextual Info: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability

diode mpg06g

Contextual Info: MPG06A, MPG06B, MPG06D, MPG06G, MPG06J, MPG06K, MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A

Contextual Info: MPG06A thru MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability

Contextual Info: MPG06A, MPG06B, MPG06D, MPG06G, MPG06J, MPG06K, MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A

Contextual Info: RMPG06A thru RMPG06K www.vishay.com Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability

MPG06M

Abstract: J-STD-002 MPG06A MPG06B MPG06G
Contextual Info: MPG06A thru MPG06M Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability

Contextual Info: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability