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    chip 5511 Datasheets

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    GCM31CD70J226KE02K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
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    sc 6200 8pin

    Abstract: chip 5511 5X715-ND 2D 1002 pg-3000 smd 1034 370-1042-ND LX1FS-ND 370-1022-ND CFE4-A7BP-212
    Text: , all active circuitry on the chip within the oscillator is shut down. For reactivation, time in which , 45.61 45.61 45.61 55.11 55.11 45.61 45.61 45.61 55.11 55.11 45.61 45.61 45.61 55.11 55.11 45.61 45.61 45.61 55.11 55.11 CFE4-A7BP-155.52 CFE4-A7BP-156.25 CFE4-A7BP-212.5 CFE4-A7BP , 68.00 58.00 58.00 58.00 68.00 68.00 55.11 55.11 55.11 64.61 64.61 55.11 55.11 55.11 , 58.00 58.00 68.00 68.00 58.00 58.00 58.00 68.00 68.00 55.11 55.11 55.11 64.61 64.61


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    PDF 000MHz 000MHz Conn55 CTED-A5B3-155 CTED-A5B3-156 CTED-A5B3-212 CTED-A5B3-311 sc 6200 8pin chip 5511 5X715-ND 2D 1002 pg-3000 smd 1034 370-1042-ND LX1FS-ND 370-1022-ND CFE4-A7BP-212

    2001 - LT5507

    Abstract: LT5507 s-parameters 5511 567 tone LT5503 Switching Transformers zo 607 LT5500 LT5502 LT5504
    Text: DESCRIPTIO The LT® 5511 mixer is designed to meet the high linearity requirements of cable TV , /TONE) 44MHz GND ­20 ­30 ­40 ­50 LO­ ­70 ­90 5511 F01a LO INPUT 994MHz ­10dBm , °C ­15 ­5 0 ­10 IF INPUT POWER (dBm/TONE) 5 5511 F01b Figure 1. High Signal Level Upmixer for , 25°C, unless otherwise noted. Shutdown Current ( Chip Disabled) EN = Low Enable Mode , °C LO TO RF LEAKAGE (dBm) 17 6 ­2 ­20 5 5511 G03 TA = 25°C GAIN ­10 0 ­5 IF


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    PDF LT5511 3000MHz 17dBm 950MHz) Out05 300MHz LT5506 500MHz LT5507 100kHz LT5507 LT5507 s-parameters 5511 567 tone LT5503 Switching Transformers zo 607 LT5500 LT5502 LT5504

    2001 - 567 tone

    Abstract: balun diode mixer capacitor 1.8ghz 100pF 0402 capacitor 1nF 0402 LT5503 ZO 607 MA zo 607 p 408 LT5500 LT5502 LT5511
    Text: DESCRIPTIO FEATURES s s s s s s s s s s The LT® 5511 mixer is designed to meet the high , ­60 ­80 GND POUT 5511 F01a LO INPUT 994MHz PLO = ­10dBm fRF1 = 950MHz fRF2 = 949MHz TA = 25°C ­15 ­5 0 ­10 IF INPUT POWER (dBm/TONE) 5 5511 F01b Figure 1. High Signal Level , otherwise noted. Shutdown Current ( Chip Disabled) EN = Low Enable Mode EN = High Disable Mode , ­10 300 500 700 900 1100 RF OUTPUT FREQUENCY (MHz) ­50 ­60 1300 5511 G07 IIP3, IIP2


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    PDF LT5511 3000MHz 17dBm Input00 LT5502 400MHz 70MHz LT5503 120MHz 567 tone balun diode mixer capacitor 1.8ghz 100pF 0402 capacitor 1nF 0402 LT5503 ZO 607 MA zo 607 p 408 LT5500 LT5502 LT5511

    2001 - 5511

    Abstract: LT5503 broadband impedance transformation LT5500 LT5502 LT5511 LT5511EFE LTC5505 169 MHz RF CHIP Transmission-Line Conversion Transformers
    Text: DESCRIPTIO FEATURES s s s s s s s s s s The LT® 5511 mixer is designed to meet the high , ­60 ­80 GND POUT 5511 F01a LO INPUT 994MHz PLO = ­10dBm fRF1 = 950MHz fRF2 = 949MHz TA = 25°C ­15 ­5 0 ­10 IF INPUT POWER (dBm/TONE) 5 5511 F01b Figure 1. High Signal Level , otherwise noted. Shutdown Current ( Chip Disabled) EN = Low Enable Mode EN = High Disable Mode , ­10 300 500 700 900 1100 RF OUTPUT FREQUENCY (MHz) ­50 ­60 1300 5511 G07 IIP3, IIP2


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    PDF LT5511 3000MHz 17dBm Input00 LT5502 400MHz 70MHz LT5503 120MHz 5511 LT5503 broadband impedance transformation LT5500 LT5502 LT5511 LT5511EFE LTC5505 169 MHz RF CHIP Transmission-Line Conversion Transformers

    2001 - LT5503

    Abstract: No abstract text available
    Text: DESCRIPTIO The LT® 5511 mixer is designed to meet the high linearity requirements of cable TV , (dBm/TONE) 44MHz GND –20 –30 –40 –50 LO– –70 –90 5511 F01a LO , 950MHz fRF2 = 949MHz TA = 25°C –15 –5 0 –10 IF INPUT POWER (dBm/TONE) 5 5511 F01b , . Shutdown Current ( Chip Disabled) EN = Low Enable Mode Threshold EN = High Disable Mode , POWER (dBm) 5511 G03 TA = 25°C GAIN –5 –15 5 –10 0 –5 IF INPUT POWER (dBm


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    PDF LT5511 3000MHz 17dBm 950MHz) 300MHz LT5506 500MHz LT5507 100kHz LTC5508 LT5503

    sis 5511

    Abstract: HA20
    Text: S ÌS 5511 PCI/ISA Cache Memory Controller Figure 1.2 SiSSSll Function Block Diagram 2.3 General , has been integrated into 5511 . The SLiC/MP interrupt control module consists of IPI control block and , Silicon Integrated Systems Corporation S ÌS 5511 PCI/ISA Cache Memory Controller The SLiC module will , dirty SRAM chip . This is accomplished by sharing the alter bit with tag address bits in the same 8 , 5511 can support up to 512MBytes (4 banks) of DRAM. Each bank could be single or double sided 64 / 72


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    PDF SiS551 SiS5511 SiS5512 667/60/50MHz. XFC00028h. XFC00030h. 1111b. sis 5511 HA20

    bu 5521

    Abstract: 5731 led 05cc0 ESPY5501 SPY5501 5501 ESAA5501 55D1 SPR5501 m 5701
    Text: 551 1 , 571 1 (E)SBR 5521 5?21 5531, 5731 GaAsP 5501,5701 CAR 5511 ,5711 5521, 5721 5531,5731 GaP 5501, 5701 cprj 5511 ,5711 5521,5721 5531, 5731 Green GaP 5501, 5701 ,E)eBR 5511 , 5711 (t)bbb 5521, 5721 5531,5731 GaP CDf> 5521, 5721 ^^ 5531,5731 Yellow GaP 5501,5701 ipicpv 5511 , 5711 5521,5721 5531, 5731 GaAsP/GaP 5501, 5701 , 5511 ,5711 (h)bAY 5521,5721 5531,5731 Orange GaAsP/GaP 5501, 5701 . , 5511 , 5711 (t)oAA 5521 5721 5531, 5731 ■DESCRIPTION Each LED is encapsulated in epoxy package with


    OCR Scan
    PDF 00S3BA3 572BLE bu 5521 5731 led 05cc0 ESPY5501 SPY5501 5501 ESAA5501 55D1 SPR5501 m 5701

    d6345

    Abstract: PD6345 PD6345GS SCK 054 PD6345I MLT 22 452 sck 083 T10601 NEC UPD6345 sol 4011 be
    Text: ¿¿PD6345 (1) v vaWMb Vcc O- -40 V VDD O + 5 V DD 1 chip CPU EN LAT SO SCK RES 55 777 DD , O -40 V Vnn O + 5 V V DD EN LAT 1 chip CPU SO SCK RES V ss in DD EN LAT SIN , LAT SO SCK RES 777 1 chip CPU DD EN LAT SIN SCK 0, Ö2 RES 0 8 777 //PD6345 R 14 , (0273)26 (0276)46 (0266)21 (0265)24 (0262)35 (0263)35 (0266)53 (0552)24 (048)641 -0161 - 5511 -4344 - 5511 - 5511 - 5511 -2155 -1717 5511 -1255 4011 -2261 -5011 -1444 1666 5350 4141 1411 ÏL * m Kl


    OCR Scan
    PDF D6345 /PD6345IÃ PD6345C 300mil) PD6345GS PD6345GS d6345 PD6345 SCK 054 PD6345I MLT 22 452 sck 083 T10601 NEC UPD6345 sol 4011 be

    MT5LC2568DJ

    Abstract: No abstract text available
    Text: offers chip enable (CE) and output enable (OE) with this organization. These enhancements can place the , Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip Disable to output in High-Z Chip Enable to power-up time `RC 'AA `ACE `OH 'LZCE 'HZCE *PU `PD *AOE `LZOE ` HZOE , ns ns ns ns ns ns ns ns ns ns ns ns ns ns 7 6, 7 6 7 6 ,7 4 4 SRAM Chip Disable to power-down , ITE C ycle WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup


    OCR Scan
    PDF MT5LC2568 28-Pin acces69 160-PIN MT5LC2568DJ

    1995 - pfr 852 diode

    Abstract: Catch-22 National 74hc04 74HC04 oscillator application note 74hc04 oscillator 8 Mhz oscillator 9152 "1N6263" 74hc04 single 1N914 AN-588
    Text: external oscillator signal which is set to the battery voltage plus one diode drop Once the chip is , peak-topeak voltage must not exceed the voltage at the VBB pin When the chip is first time powered up it is , internal inverter If the internal inverter doesn't pass the external signal you cannot program the chip , Continue your regular initialization of the chip The above concept could be applied to any chip that uses , Rue Deputado Lacorda Franco 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex


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    PDF DP857x LP2951 LM611 LP2951onductor 20-3A pfr 852 diode Catch-22 National 74hc04 74HC04 oscillator application note 74hc04 oscillator 8 Mhz oscillator 9152 "1N6263" 74hc04 single 1N914 AN-588

    1995 - TMS320C30

    Abstract: block diagram of tms320c30 D-82256 AN-642 C1995 DP8422A VME bus schematic diagram for the reader
    Text: after this chip access write access programming Programming Bits DESCRIPTION This design consists , the VME bus The DP8422A is operated in access Mode 1 and uses the interleaving capability on chip A , 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor


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    PDF TMS320C30 DP8422A 20-3A block diagram of tms320c30 D-82256 AN-642 C1995 VME bus schematic diagram for the reader

    1995 - SIS5513

    Abstract: SiS5511 T40 N sis 5511 pin configuration of IC 74138 128m simm 72 pin 3-8 decoder 74138 pin diagram intel 8042 103AD sd 7406
    Text: Pentium PCI/ISA Chipset 1. 5511 /5512/5513 Overview SiS5511 SiS5512 SiS5513 PCI/ISA Cache , . SRAM CPU Pentium LVT573 HOST BUS Address Data PCMC DRAM 244 5511 PLDB , . ( 5511 decodes memory space up to 1 Gbytes actually, but limited by current DRAM modules 512Mbytes is , Dual Processor application the SLiC/MP interrupt control module has been integrated into 5511 . The , save the dirty SRAM chip . This is accomplished by sharing the alter bit with tag address bits in the


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    PDF SiS5511 SiS5512 SiS5513 LVT573 T40 N sis 5511 pin configuration of IC 74138 128m simm 72 pin 3-8 decoder 74138 pin diagram intel 8042 103AD sd 7406

    1995 - General Semiconductor SJ diode

    Abstract: national Semiconductor 74f32
    Text: Semiconductor Corporation et 20-Lead Ceramic Leadless Chip Carrier Type C Connection Diagrams 54F 74F , DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small Outline SOIC JEDEC SJ e Small Outline SOIC , Leadless Chip Carrier (L) NS Package Number E20A 3 bs ol et e Temperature Range C e Commercial (0 , Semiconductores Do Brazil Ltda Rue Deputado Lacorda Franco 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor (Australia) Pty Ltd Building


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    PDF 74F32 74F32PC 14-Lead 14-Lead 54F32DM 74F32SC 74F32SJ 54F32FM 54F32LM General Semiconductor SJ diode national Semiconductor 74f32

    1995 - General Semiconductor SJ diode

    Abstract: 54F08DM 54F08FM 54F08LM 74F08 74F08PC 74F08SC 74F08SJ J14A M14A
    Text: 20-Lead Ceramic Leadless Chip Carrier Type C 54F08DM (Note 2) Note 1 Devices also available in , reels Device Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip , -Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 Physical Dimensions inches (millimeters , 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor


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    PDF 74F08 74F08PC 14-Lead 14-Lead 74F08SC 74F08SJ 54F08FM General Semiconductor SJ diode 54F08DM 54F08FM 54F08LM 74F08 74F08PC 74F08SC 74F08SJ J14A M14A

    1995 - 74F10

    Abstract: 54F10DM 54F10FM 54F10LM 74F10PC 74F10SC 74F10SJ J14A M14A N14A
    Text: 14-Lead Cerpack 54F10LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier Type C , Device Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC , -Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 Physical Dimensions inches (millimeters , 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11


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    PDF 74F10 74F10PC 14-Lead 14-Lead 74F10SC 74F10SJ 54F10FM 74F10 54F10DM 54F10FM 54F10LM 74F10PC 74F10SC 74F10SJ J14A M14A N14A

    1995 - J14A

    Abstract: M14A 54F38DM 54F38FM 54F38LM 74F38 74F38PC 74F38SC 74F38SJ
    Text: ) W14B 14-Lead Cerpack 54F38LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier Type C , Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small , Chip Carrier (L) NS Package Number E20A 5 Physical Dimensions inches (millimeters) (Continued , 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11


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    PDF 74F38 74F38PC 14-Lead 14-Lead 74F38SC 74F38SJ 54F38FM J14A M14A 54F38DM 54F38FM 54F38LM 74F38 74F38PC 74F38SC 74F38SJ

    1995 - 74F02

    Abstract: 54F02DM 54F02FM 54F02LM 74F02PC 74F02SC 74F02SJ J14A M14A N14A
    Text: 54F02LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier Type C 54F02DM (Note 2) Note 1 , e Flatpak L e Leadless Chip Carrier (LCC) S e Small Outline SOIC JEDEC SJ e Small Outline SOIC , Dimensions inches (millimeters) 20-Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 , Rue Deputado Lacorda Franco 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor (Australia) Pty Ltd Building 16


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    PDF 74F02 74F02PC 14-Lead 14-Lead 74F02SC 74F02SJ 54F02FM 74F02 54F02DM 54F02FM 54F02LM 74F02PC 74F02SC 74F02SJ J14A M14A N14A

    1995 - Not Available

    Abstract: No abstract text available
    Text: are registered trademarks of National Semiconductor Corporation et 20-Lead Ceramic Leadless Chip , Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small , Dimensions inches (millimeters) O 20-Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 , 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181


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    PDF 74F10 74F10PC 14-Lead 14-Lead 54F10DM 74F10SC 74F10SJ 54F10FM 54F10LM

    national semiconductor dimensions 14-lead

    Abstract: General Semiconductor SJ diode 54F86DM 54F86FM 54F86LM 74F86 74F86PC 74F86SC 74F86SJ J14A
    Text: Chip Carrier Type C Note 1 Devices also available in 13 reel Use suffix e SCX and SJX Note 2 , Chip Carrier (LCC) S e Small Outline SOIC JEDEC SJ e Small Outline SOIC EIAJ Temperature Range C , (millimeters) 20-Terminal Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 ol et e , Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National


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    PDF 74F86 74F86PC 74F86SC 14-Lead 14-Lead 54F86DM 74F86SJ 54F86FM 54F86LM national semiconductor dimensions 14-lead General Semiconductor SJ diode 54F86DM 54F86FM 54F86LM 74F86 74F86PC 74F86SC 74F86SJ J14A

    1995 - 9462

    Abstract: No abstract text available
    Text: registered trademark of National Semiconductor Corporation et 20-Lead Ceramic Leadless Chip Carrier Type , Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small , (millimeters) O 20-Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 bs ol et e , Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor (Australia


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    PDF 74F20 74F20PC 14-Lead 14-Lead 54F20DM 74F20SC 74F20SJ 54F20FM 54F20LM 9462

    1995 - 9463

    Abstract: 54F32DM 54F32FM 54F32LM 74F32 74F32PC 74F32SC 74F32SJ J14A M14A
    Text: 20-Lead Ceramic Leadless Chip Carrier Type C 54F32DM (Note 2) Note 1 Devices also available in , reels Device Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip , -Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 Physical Dimensions inches (millimeters , 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11


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    PDF 74F32 74F32PC 14-Lead 14-Lead 74F32SC 74F32SJ 54F32FM 9463 54F32DM 54F32FM 54F32LM 74F32 74F32PC 74F32SC 74F32SJ J14A M14A

    1995 - 54F86DM

    Abstract: 54F86FM 54F86LM 74F86 74F86PC 74F86SC 74F86SJ J14A M14A N14A
    Text: (Note 2) W14B 14-Lead Cerpack 54F86LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier , DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small Outline SOIC JEDEC SJ e , 125 C) Physical Dimensions inches (millimeters) 20-Terminal Ceramic Leadless Chip Carrier (L , 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor


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    PDF 74F86 74F86PC 54F86DM 14-Lead 14-Lead 74F86SC 74F86SJ 54F86FM 54F86DM 54F86FM 54F86LM 74F86 74F86PC 74F86SC 74F86SJ J14A M14A N14A

    1995 - 54F20DM

    Abstract: 54F20FM 54F20LM 74F20 74F20PC 74F20SC 74F20SJ J14A M14A N14A
    Text: 54F20LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier Type C 54F20DM (Note 2) Note 1 , Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small , Military (b55 C to a 125 C) Physical Dimensions inches (millimeters) 20-Lead Ceramic Leadless Chip , 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor


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    PDF 74F20 74F20PC 14-Lead 14-Lead 74F20SC 74F20SJ 54F20FM 54F20DM 54F20FM 54F20LM 74F20 74F20PC 74F20SC 74F20SJ J14A M14A N14A

    1995 - MA0505

    Abstract: 3168* inverter 74F04SC 54F04DM 54F04FM 54F04LM 74F04 74F04PC 74F04SJ J14A
    Text: 20-Lead Ceramic Leadless Chip Carrier Type C 54F04DM (Note 2) Note 1 Devices also available in , Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small , Chip Carrier (L) NS Package Number E20A 3 Physical Dimensions inches (millimeters) (Continued , 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor


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    PDF 74F04 74F04PC 14-Lead 14-Lead 74F04SC 74F04SJ 54F04FM MA0505 3168* inverter 74F04SC 54F04DM 54F04FM 54F04LM 74F04 74F04PC 74F04SJ J14A

    1995 - PLCC pin configuration

    Abstract: C1995 NM27C010 NM27LV010 BIOS 32 Pin PLCC AN-809 national
    Text: PINOUTS The NM27LV010 is available in three packages a 32-pin LCC (leadless chip carrier with erase window) a 32-pin PLCC (plastic leaded chip carrier) and a 32-pin TSOP (thin small outline package) The , power and battery operation is much more practical The advantage for chip manufacturers is that , Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National


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    PDF NM27LV010 NM27LV010 20-3A PLCC pin configuration C1995 NM27C010 BIOS 32 Pin PLCC AN-809 national
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