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    chip 5511 Datasheets

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    GCM31CD70J226KE02K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
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    sc 6200 8pin

    Abstract: chip 5511 5X715-ND 2D 1002 pg-3000 smd 1034 370-1042-ND LX1FS-ND 370-1022-ND CFE4-A7BP-212
    Text: , all active circuitry on the chip within the oscillator is shut down. For reactivation, time in which , 45.61 45.61 45.61 55.11 55.11 45.61 45.61 45.61 55.11 55.11 45.61 45.61 45.61 55.11 55.11 45.61 45.61 45.61 55.11 55.11 CFE4-A7BP-155.52 CFE4-A7BP-156.25 CFE4-A7BP-212.5 CFE4-A7BP , 68.00 58.00 58.00 58.00 68.00 68.00 55.11 55.11 55.11 64.61 64.61 55.11 55.11 55.11 , 58.00 58.00 68.00 68.00 58.00 58.00 58.00 68.00 68.00 55.11 55.11 55.11 64.61 64.61


    Original     		PDF 000MHz 000MHz Conn55 CTED-A5B3-155 CTED-A5B3-156 CTED-A5B3-212 CTED-A5B3-311 sc 6200 8pin chip 5511 5X715-ND 2D 1002 pg-3000 smd 1034 370-1042-ND LX1FS-ND 370-1022-ND CFE4-A7BP-212

    2001 - LT5507

    Abstract: LT5507 s-parameters 5511 567 tone LT5503 Switching Transformers zo 607 LT5500 LT5502 LT5504
    Text: DESCRIPTIO The LT® 5511 mixer is designed to meet the high linearity requirements of cable TV , /TONE) 44MHz GND ­20 ­30 ­40 ­50 LO­ ­70 ­90 5511 F01a LO INPUT 994MHz ­10dBm , °C ­15 ­5 0 ­10 IF INPUT POWER (dBm/TONE) 5 5511 F01b Figure 1. High Signal Level Upmixer for , 25°C, unless otherwise noted. Shutdown Current ( Chip Disabled) EN = Low Enable Mode , °C LO TO RF LEAKAGE (dBm) 17 6 ­2 ­20 5 5511 G03 TA = 25°C GAIN ­10 0 ­5 IF


    Original     		PDF LT5511 3000MHz 17dBm 950MHz) Out05 300MHz LT5506 500MHz LT5507 100kHz LT5507 LT5507 s-parameters 5511 567 tone LT5503 Switching Transformers zo 607 LT5500 LT5502 LT5504

    2001 - 567 tone

    Abstract: balun diode mixer capacitor 1.8ghz 100pF 0402 capacitor 1nF 0402 LT5503 ZO 607 MA zo 607 p 408 LT5500 LT5502 LT5511
    Text: DESCRIPTIO FEATURES s s s s s s s s s s The LT® 5511 mixer is designed to meet the high , ­60 ­80 GND POUT 5511 F01a LO INPUT 994MHz PLO = ­10dBm fRF1 = 950MHz fRF2 = 949MHz TA = 25°C ­15 ­5 0 ­10 IF INPUT POWER (dBm/TONE) 5 5511 F01b Figure 1. High Signal Level , otherwise noted. Shutdown Current ( Chip Disabled) EN = Low Enable Mode EN = High Disable Mode , ­10 300 500 700 900 1100 RF OUTPUT FREQUENCY (MHz) ­50 ­60 1300 5511 G07 IIP3, IIP2


    Original     		PDF LT5511 3000MHz 17dBm Input00 LT5502 400MHz 70MHz LT5503 120MHz 567 tone balun diode mixer capacitor 1.8ghz 100pF 0402 capacitor 1nF 0402 LT5503 ZO 607 MA zo 607 p 408 LT5500 LT5502 LT5511

    2001 - 5511

    Abstract: LT5503 broadband impedance transformation LT5500 LT5502 LT5511 LT5511EFE LTC5505 169 MHz RF CHIP Transmission-Line Conversion Transformers
    Text: DESCRIPTIO FEATURES s s s s s s s s s s The LT® 5511 mixer is designed to meet the high , ­60 ­80 GND POUT 5511 F01a LO INPUT 994MHz PLO = ­10dBm fRF1 = 950MHz fRF2 = 949MHz TA = 25°C ­15 ­5 0 ­10 IF INPUT POWER (dBm/TONE) 5 5511 F01b Figure 1. High Signal Level , otherwise noted. Shutdown Current ( Chip Disabled) EN = Low Enable Mode EN = High Disable Mode , ­10 300 500 700 900 1100 RF OUTPUT FREQUENCY (MHz) ­50 ­60 1300 5511 G07 IIP3, IIP2


    Original     		PDF LT5511 3000MHz 17dBm Input00 LT5502 400MHz 70MHz LT5503 120MHz 5511 LT5503 broadband impedance transformation LT5500 LT5502 LT5511 LT5511EFE LTC5505 169 MHz RF CHIP Transmission-Line Conversion Transformers

    2001 - LT5503

    Abstract: No abstract text available
    Text: DESCRIPTIO The LT® 5511 mixer is designed to meet the high linearity requirements of cable TV , (dBm/TONE) 44MHz GND –20 –30 –40 –50 LO– –70 –90 5511 F01a LO , 950MHz fRF2 = 949MHz TA = 25°C –15 –5 0 –10 IF INPUT POWER (dBm/TONE) 5 5511 F01b , . Shutdown Current ( Chip Disabled) EN = Low Enable Mode Threshold EN = High Disable Mode , POWER (dBm) 5511 G03 TA = 25°C GAIN –5 –15 5 –10 0 –5 IF INPUT POWER (dBm


    Original     		PDF LT5511 3000MHz 17dBm 950MHz) 300MHz LT5506 500MHz LT5507 100kHz LTC5508 LT5503

    sis 5511

    Abstract: HA20
    Text: S ÌS 5511 PCI/ISA Cache Memory Controller Figure 1.2 SiSSSll Function Block Diagram 2.3 General , has been integrated into 5511 . The SLiC/MP interrupt control module consists of IPI control block and , Silicon Integrated Systems Corporation S ÌS 5511 PCI/ISA Cache Memory Controller The SLiC module will , dirty SRAM chip . This is accomplished by sharing the alter bit with tag address bits in the same 8 , 5511 can support up to 512MBytes (4 banks) of DRAM. Each bank could be single or double sided 64 / 72


    OCR Scan     		PDF SiS551 SiS5511 SiS5512 667/60/50MHz. XFC00028h. XFC00030h. 1111b. sis 5511 HA20

    bu 5521

    Abstract: 5731 led 05cc0 ESPY5501 SPY5501 5501 ESAA5501 55D1 SPR5501 m 5701
    Text: 551 1 , 571 1 (E)SBR 5521 5?21 5531, 5731 GaAsP 5501,5701 CAR 5511 ,5711 5521, 5721 5531,5731 GaP 5501, 5701 cprj 5511 ,5711 5521,5721 5531, 5731 Green GaP 5501, 5701 ,E)eBR 5511 , 5711 (t)bbb 5521, 5721 5531,5731 GaP CDf> 5521, 5721 ^^ 5531,5731 Yellow GaP 5501,5701 ipicpv 5511 , 5711 5521,5721 5531, 5731 GaAsP/GaP 5501, 5701 , 5511 ,5711 (h)bAY 5521,5721 5531,5731 Orange GaAsP/GaP 5501, 5701 . , 5511 , 5711 (t)oAA 5521 5721 5531, 5731 ■DESCRIPTION Each LED is encapsulated in epoxy package with


    OCR Scan     		PDF 00S3BA3 572BLE bu 5521 5731 led 05cc0 ESPY5501 SPY5501 5501 ESAA5501 55D1 SPR5501 m 5701

    d6345

    Abstract: PD6345 PD6345GS SCK 054 PD6345I MLT 22 452 sck 083 T10601 NEC UPD6345 sol 4011 be
    Text: ¿¿PD6345 (1) v vaWMb Vcc O- -40 V VDD O + 5 V DD 1 chip CPU EN LAT SO SCK RES 55 777 DD , O -40 V Vnn O + 5 V V DD EN LAT 1 chip CPU SO SCK RES V ss in DD EN LAT SIN , LAT SO SCK RES 777 1 chip CPU DD EN LAT SIN SCK 0, Ö2 RES 0 8 777 //PD6345 R 14 , (0273)26 (0276)46 (0266)21 (0265)24 (0262)35 (0263)35 (0266)53 (0552)24 (048)641 -0161 - 5511 -4344 - 5511 - 5511 - 5511 -2155 -1717 5511 -1255 4011 -2261 -5011 -1444 1666 5350 4141 1411 ÏL * m Kl


    OCR Scan     		PDF D6345 /PD6345IÃ PD6345C 300mil) PD6345GS PD6345GS d6345 PD6345 SCK 054 PD6345I MLT 22 452 sck 083 T10601 NEC UPD6345 sol 4011 be

    MT5LC2568DJ

    Abstract: No abstract text available
    Text: offers chip enable (CE) and output enable (OE) with this organization. These enhancements can place the , Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip Disable to output in High-Z Chip Enable to power-up time `RC 'AA `ACE `OH 'LZCE 'HZCE *PU `PD *AOE `LZOE ` HZOE , ns ns ns ns ns ns ns ns ns ns ns ns ns ns 7 6, 7 6 7 6 ,7 4 4 SRAM Chip Disable to power-down , ITE C ycle WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup


    OCR Scan     		PDF MT5LC2568 28-Pin acces69 160-PIN MT5LC2568DJ

    1995 - pfr 852 diode

    Abstract: Catch-22 National 74hc04 74HC04 oscillator application note 74hc04 oscillator 8 Mhz oscillator 9152 "1N6263" 74hc04 single 1N914 AN-588
    Text: external oscillator signal which is set to the battery voltage plus one diode drop Once the chip is , peak-topeak voltage must not exceed the voltage at the VBB pin When the chip is first time powered up it is , internal inverter If the internal inverter doesn't pass the external signal you cannot program the chip , Continue your regular initialization of the chip The above concept could be applied to any chip that uses , Rue Deputado Lacorda Franco 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex


    Original     		PDF DP857x LP2951 LM611 LP2951onductor 20-3A pfr 852 diode Catch-22 National 74hc04 74HC04 oscillator application note 74hc04 oscillator 8 Mhz oscillator 9152 "1N6263" 74hc04 single 1N914 AN-588

    1995 - TMS320C30

    Abstract: block diagram of tms320c30 D-82256 AN-642 C1995 DP8422A VME bus schematic diagram for the reader
    Text: after this chip access write access programming Programming Bits DESCRIPTION This design consists , the VME bus The DP8422A is operated in access Mode 1 and uses the interleaving capability on chip A , 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor


    Original     		PDF TMS320C30 DP8422A 20-3A block diagram of tms320c30 D-82256 AN-642 C1995 VME bus schematic diagram for the reader

    1995 - SIS5513

    Abstract: SiS5511 T40 N sis 5511 pin configuration of IC 74138 128m simm 72 pin 3-8 decoder 74138 pin diagram intel 8042 103AD sd 7406
    Text: Pentium PCI/ISA Chipset 1. 5511 /5512/5513 Overview SiS5511 SiS5512 SiS5513 PCI/ISA Cache , . SRAM CPU Pentium LVT573 HOST BUS Address Data PCMC DRAM 244 5511 PLDB , . ( 5511 decodes memory space up to 1 Gbytes actually, but limited by current DRAM modules 512Mbytes is , Dual Processor application the SLiC/MP interrupt control module has been integrated into 5511 . The , save the dirty SRAM chip . This is accomplished by sharing the alter bit with tag address bits in the


    Original     		PDF SiS5511 SiS5512 SiS5513 LVT573 T40 N sis 5511 pin configuration of IC 74138 128m simm 72 pin 3-8 decoder 74138 pin diagram intel 8042 103AD sd 7406

    1995 - General Semiconductor SJ diode

    Abstract: national Semiconductor 74f32
    Text: Semiconductor Corporation et 20-Lead Ceramic Leadless Chip Carrier Type C Connection Diagrams 54F 74F , DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small Outline SOIC JEDEC SJ e Small Outline SOIC , Leadless Chip Carrier (L) NS Package Number E20A 3 bs ol et e Temperature Range C e Commercial (0 , Semiconductores Do Brazil Ltda Rue Deputado Lacorda Franco 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor (Australia) Pty Ltd Building


    Original     		PDF 74F32 74F32PC 14-Lead 14-Lead 54F32DM 74F32SC 74F32SJ 54F32FM 54F32LM General Semiconductor SJ diode national Semiconductor 74f32

    1995 - General Semiconductor SJ diode

    Abstract: 54F08DM 54F08FM 54F08LM 74F08 74F08PC 74F08SC 74F08SJ J14A M14A
    Text: 20-Lead Ceramic Leadless Chip Carrier Type C 54F08DM (Note 2) Note 1 Devices also available in , reels Device Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip , -Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 Physical Dimensions inches (millimeters , 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor


    Original     		PDF 74F08 74F08PC 14-Lead 14-Lead 74F08SC 74F08SJ 54F08FM General Semiconductor SJ diode 54F08DM 54F08FM 54F08LM 74F08 74F08PC 74F08SC 74F08SJ J14A M14A

    1995 - 74F10

    Abstract: 54F10DM 54F10FM 54F10LM 74F10PC 74F10SC 74F10SJ J14A M14A N14A
    Text: 14-Lead Cerpack 54F10LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier Type C , Device Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC , -Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 Physical Dimensions inches (millimeters , 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11


    Original     		PDF 74F10 74F10PC 14-Lead 14-Lead 74F10SC 74F10SJ 54F10FM 74F10 54F10DM 54F10FM 54F10LM 74F10PC 74F10SC 74F10SJ J14A M14A N14A

    1995 - J14A

    Abstract: M14A 54F38DM 54F38FM 54F38LM 74F38 74F38PC 74F38SC 74F38SJ
    Text: ) W14B 14-Lead Cerpack 54F38LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier Type C , Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small , Chip Carrier (L) NS Package Number E20A 5 Physical Dimensions inches (millimeters) (Continued , 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11


    Original     		PDF 74F38 74F38PC 14-Lead 14-Lead 74F38SC 74F38SJ 54F38FM J14A M14A 54F38DM 54F38FM 54F38LM 74F38 74F38PC 74F38SC 74F38SJ

    1995 - 74F02

    Abstract: 54F02DM 54F02FM 54F02LM 74F02PC 74F02SC 74F02SJ J14A M14A N14A
    Text: 54F02LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier Type C 54F02DM (Note 2) Note 1 , e Flatpak L e Leadless Chip Carrier (LCC) S e Small Outline SOIC JEDEC SJ e Small Outline SOIC , Dimensions inches (millimeters) 20-Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 , Rue Deputado Lacorda Franco 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor (Australia) Pty Ltd Building 16


    Original     		PDF 74F02 74F02PC 14-Lead 14-Lead 74F02SC 74F02SJ 54F02FM 74F02 54F02DM 54F02FM 54F02LM 74F02PC 74F02SC 74F02SJ J14A M14A N14A

    1995 - Not Available

    Abstract: No abstract text available
    Text: are registered trademarks of National Semiconductor Corporation et 20-Lead Ceramic Leadless Chip , Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small , Dimensions inches (millimeters) O 20-Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 , 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181


    Original     		PDF 74F10 74F10PC 14-Lead 14-Lead 54F10DM 74F10SC 74F10SJ 54F10FM 54F10LM

    national semiconductor dimensions 14-lead

    Abstract: General Semiconductor SJ diode 54F86DM 54F86FM 54F86LM 74F86 74F86PC 74F86SC 74F86SJ J14A
    Text: Chip Carrier Type C Note 1 Devices also available in 13 reel Use suffix e SCX and SJX Note 2 , Chip Carrier (LCC) S e Small Outline SOIC JEDEC SJ e Small Outline SOIC EIAJ Temperature Range C , (millimeters) 20-Terminal Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 ol et e , Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National


    Original     		PDF 74F86 74F86PC 74F86SC 14-Lead 14-Lead 54F86DM 74F86SJ 54F86FM 54F86LM national semiconductor dimensions 14-lead General Semiconductor SJ diode 54F86DM 54F86FM 54F86LM 74F86 74F86PC 74F86SC 74F86SJ J14A

    1995 - 9462

    Abstract: No abstract text available
    Text: registered trademark of National Semiconductor Corporation et 20-Lead Ceramic Leadless Chip Carrier Type , Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small , (millimeters) O 20-Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 bs ol et e , Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor (Australia


    Original     		PDF 74F20 74F20PC 14-Lead 14-Lead 54F20DM 74F20SC 74F20SJ 54F20FM 54F20LM 9462

    1995 - 9463

    Abstract: 54F32DM 54F32FM 54F32LM 74F32 74F32PC 74F32SC 74F32SJ J14A M14A
    Text: 20-Lead Ceramic Leadless Chip Carrier Type C 54F32DM (Note 2) Note 1 Devices also available in , reels Device Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip , -Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 3 Physical Dimensions inches (millimeters , 120-3A Sao Paulo-SP Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11


    Original     		PDF 74F32 74F32PC 14-Lead 14-Lead 74F32SC 74F32SJ 54F32FM 9463 54F32DM 54F32FM 54F32LM 74F32 74F32PC 74F32SC 74F32SJ J14A M14A

    1995 - 54F86DM

    Abstract: 54F86FM 54F86LM 74F86 74F86PC 74F86SC 74F86SJ J14A M14A N14A
    Text: (Note 2) W14B 14-Lead Cerpack 54F86LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier , DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small Outline SOIC JEDEC SJ e , 125 C) Physical Dimensions inches (millimeters) 20-Terminal Ceramic Leadless Chip Carrier (L , 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor


    Original     		PDF 74F86 74F86PC 54F86DM 14-Lead 14-Lead 74F86SC 74F86SJ 54F86FM 54F86DM 54F86FM 54F86LM 74F86 74F86PC 74F86SC 74F86SJ J14A M14A N14A

    1995 - 54F20DM

    Abstract: 54F20FM 54F20LM 74F20 74F20PC 74F20SC 74F20SJ J14A M14A N14A
    Text: 54F20LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier Type C 54F20DM (Note 2) Note 1 , Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small , Military (b55 C to a 125 C) Physical Dimensions inches (millimeters) 20-Lead Ceramic Leadless Chip , 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor


    Original     		PDF 74F20 74F20PC 14-Lead 14-Lead 74F20SC 74F20SJ 54F20FM 54F20DM 54F20FM 54F20LM 74F20 74F20PC 74F20SC 74F20SJ J14A M14A N14A

    1995 - MA0505

    Abstract: 3168* inverter 74F04SC 54F04DM 54F04FM 54F04LM 74F04 74F04PC 74F04SJ J14A
    Text: 20-Lead Ceramic Leadless Chip Carrier Type C 54F04DM (Note 2) Note 1 Devices also available in , Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small , Chip Carrier (L) NS Package Number E20A 3 Physical Dimensions inches (millimeters) (Continued , 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National Semiconductor


    Original     		PDF 74F04 74F04PC 14-Lead 14-Lead 74F04SC 74F04SJ 54F04FM MA0505 3168* inverter 74F04SC 54F04DM 54F04FM 54F04LM 74F04 74F04PC 74F04SJ J14A

    1995 - PLCC pin configuration

    Abstract: C1995 NM27C010 NM27LV010 BIOS 32 Pin PLCC AN-809 national
    Text: PINOUTS The NM27LV010 is available in three packages a 32-pin LCC (leadless chip carrier with erase window) a 32-pin PLCC (plastic leaded chip carrier) and a 32-pin TSOP (thin small outline package) The , power and battery operation is much more practical The advantage for chip manufacturers is that , Brazil 05418-000 Tel ( 55-11 ) 212-5066 Telex 391-1131931 NSBR BR Fax ( 55-11 ) 212-1181 National


    Original     		PDF NM27LV010 NM27LV010 20-3A PLCC pin configuration C1995 NM27C010 BIOS 32 Pin PLCC AN-809 national
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