CHARGE AMPLIFIER ARRAY Search Results

Linear Image sensor IC

Abstract: G9212-512S C7557 C8061-01 C8062-01 G9205 G9211 G9211-256S VREF256
Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS

G9205

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS

MLX75306

Abstract: Timing Generator for Frame Readout 8 bit LFSR for test pattern generation Melexis photodiode MLX75306KXZ-BAA-000-RE
Contextual Info: MLX75306 rd 3 Generation Linear Optical Array General Description rd The MLX75306 is the Melexis 3 generation automotive linear optical sensor array, including a 142 x 1 array of photodiodes, associated charge amplifier circuitry and a pixel data-hold function that provides

MLX75306

Abstract: TZ12 640LSB CDF-AEC-Q100-002 SO16NB 8 bit LFSR for test pattern generation Melexis photodiode
Contextual Info: MLX75306 3 Generation Linear Optical Array rd General Description rd The MLX75306 is the Melexis 3 generation automotive linear optical sensor array, including a 142 x 1 array of photodiodes, associated charge amplifier circuitry and a pixel data-hold function that provides

Contextual Info: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with

Contextual Info: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with

Contextual Info: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with

s9226

Abstract: linear cmos IMAGE SENSOR Hamamatsu Photonics KMPD1073E04 SE-171
Contextual Info: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with

linear image sensor

Abstract: Photodiode-Array cmos linear array linear cmos IMAGE SENSOR s9226 KMPD1073E04 SE-171
Contextual Info: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with

Contextual Info: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register

s9226

Abstract: KMPD1073E04 SE-171 KMPDB0229EB
Contextual Info: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with

Contextual Info: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with

jfet start up device

Abstract: KMPD1073E05 S9226 SE-171 high frequency linear cmos IMAGE SENSOR charge amplifier
Contextual Info: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with

TS100

Abstract: KMPD1073E04
Contextual Info: PREVIOUS DATA IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with

Contextual Info: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G8160 to G8163/G8180 Near infrared detectors 0.9 to 1.67 pm/0.9 to 2.55 G8160 to G8163/G8180 series InGaAs linear image sensors are specifically designed as detectors for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier made up

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an

Contextual Info: NEW IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensors for DWDM monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier made up of C-MOS

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,

Contextual Info: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with

TSL1401

Contextual Info: 400 dpi 128 x 1 Linear Array with Hold Applications/End Equipment Description The TSL1401 linear sensor array with hold consists of 128 x 1 array photodiodes, associated charge amplifier circuitry, and a pixel data-hold function that provides simultaneous integration start and stop times for all pixels. The pixels measure 63.5 µm H by 55 µm (W) with

G8053

Abstract: G8053-512R G8053-512S G8050 G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,