CHARACTERISTICS OF UJT Search Results

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Switching Thyristors

Abstract: 150 Amps dimmer module NH5 Diode triac 220v light dimmer filter coil Application silicon bilateral switch light Dimmer tektronix 576 curve tracer motorola triac catalog Q6012LTH1LED
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE Power Switching Semiconductor Products Teccor brand Thyristors table of Contents IT RMS VDRM/VRRM Thyristor Product Descriptions Product Packages Quality and Reliability Assurance V-I Characteristics of Thyristor Devices Electrical Parameter Terminology

UJT 2N2646

Abstract: UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 UJT 2N2646 specification diode zener BZX 61 C 10 UJT 2N2646 PIN VIEW pin diagram of UJT-2N2646 varistor pdz 320 BZX 460 zener diode 1N4742A 12 volt zener diode
Contextual Info: BZX85C3V3RL Series 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators This is a complete series of 1 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon–oxide passivated junctions. All this in an axial–lead

SN7449

Abstract: 54175 SN7401 74L42 SN7437 SN74S40
Contextual Info: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a

IC1201

Abstract: smd diode 748 36A RP1H "cross reference" RP1-12V RP1-24V RP1-H-12V RP1-H-24V F 245C glow plug relay "7 pin" ir tk 69
Contextual Info: RP ULTRA LOW PROFILE HIGH FREQUENCY RELAY 10.6 .417 RP-RELAYS • High frequency relay with the low profile of 4 mm .157 inch • Excellent high frequency characteristics Isolation: 10 dB or more at 1.8 GHz Insertion loss: 1 dB or less (at 1.8 GHz) V.S.W.R.: 1.3 or less (at 1.8 GHz)

251C

Abstract: 600Y cdi ic
Contextual Info: T his m a te ria l and the Inform ation herein is ihe p ro p e rty o f f ujt Etccmc Co ltd I hey shall be neither re p ro d u c e d , c o p i e d le n t, o' disclosed in any s»dy w h a ts o e v e r lor the use of a n y third pa/ty.nor used for the m .inufacTuring p u r p o s e s w ith o u t

diac SBS 14

Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Contextual Info: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation

Contextual Info: SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number Case Style Diagram Number RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <pA) lE V bb Pd •e o Intrinsic Stand Off Ratio Interbase

NTE+6402

Contextual Info: SPECIAL DEVICES SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number 6400 6400A 6401 6409 6410 Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <(lA) Ie VBB Pd •eo

applications of ujt

Abstract: ujt transistor UJT APPLICATION applications of ujt with circuits NTE6410 ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download
Contextual Info: NTE6410 Unijunction Transistor UJT Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified)

2N6120

Abstract: applications of ujt 2N6119 PN6119 PN6119-18R PN6120 PN6120-18R PROGRAMMABLE UJT 2N6119-2N6120
Contextual Info: Data Sheet central PN6119-18R PN6120-18R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNPN SILICON PROGRAMMABLE UJT Sem iconductor Corp. JEDEC T0-92-18R CASE (AGK) Manufacturers of World Class Discrete Semiconductors

IC LA 78141

Abstract: Pin Configuration of IC 78141 IC LA 78141 characteristics 50U50 Electrical Wiring Diagram Toyota ice ci LA 78141 IC LA 78141 pin number voltage reading qlr 615
Contextual Info: TMS320P25 DIGITAL SIGNAL PROCESSOR SPRS028 - OCTOBER 1994 " Instruction Cycle Time of 100 ns 40 MHz FN PACKAGE (T O P V IE W ) > * 4K Words of On-Chip Secure Program EPROM _ _ o T- w n ^ uJti — S û û û û û û û îli * 544 Words of On-Chip Data RAM

Ujts

Contextual Info: M O T O R O L A SC DIODES/OPTÔ BSE I> • b3b7SSS 0ÜÖ1213 3 ■ 7-37-Ä/ M U10 M U20 PN Unijunction Transistors Silicon Annular Unijunction Transistors . . . d esig n ed fo r eco n o m ica l, general purp ose use in pulse, tim in g, oscillator and PN UJTs

Contextual Info: Product Brief 1 – IGLOO PLUS Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/O • Segmented, Hierarchical Routing and Clock Structure • • • • • 1.2 V or 1.5 V Core Voltage for Low Power

AGLN010

Abstract: AGN060 JESD8-12A
Contextual Info: Advance v0.2 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/Os • 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS

Contextual Info: v1.2 IGLOO PLUS Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/O • • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation

QN68

Abstract: VQ100 actel part markings
Contextual Info: Advance v0.4 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process

RT3PE600L

Contextual Info: Advance v0.1 Radiation-Tolerant ProASIC 3 Low-Power SpaceFlight Flash FPGAs ® with Flash*Freeze Technology Features and Benefits • High-Performance, Low-Skew Global Network • Architecture Supports Ultra-High Utilization MIL-STD-883 Class B Qualified Packaging

AGLP030

Contextual Info: v1.2 IGLOO PLUS Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/O • • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation

AGLN010

Contextual Info: Advance v0.4 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/Os • 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS

QN68

Abstract: VQ100 PAC11 ProASIC3 handbook
Contextual Info: Advance v0.5 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process

Contextual Info: Advance v0.3 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process

Contextual Info: v1.0 IGLOO PLUS Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/O • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in Flash*Freeze Mode

IO125

Abstract: IO05PDB0V0 IO32PDB1V1 A3PE600
Contextual Info: ProASIC 3E Datasheet P ro du c t Br ie f 1 – ProASIC®3E Flash Family FPGAs with Optional Soft ARM®Support Features and Benefits Pro Professional I/O • • • • High Capacity • • • 600 k to 3 Million System Gates 108 to 504 kbits of True Dual-Port SRAM