CHANGE TRANSISTOR PARAMETERS Search Results

318d

Contextual Info: MSD602-RT1G, SMSD602-RT1G NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

SPZT3904T1G

Abstract: transistor marking 1am
Contextual Info: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E

SMMBT5401LT1G

Abstract: MMBT5401LT1G
Contextual Info: MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236

Contextual Info: PZTA42T1G High Voltage Transistor Surface Mount NPN Silicon http://onsemi.com Features • PZTA42T1G is Complement to PZTA92T1G • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and

Contextual Info: MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236

marking Specific Device Code Date Code sot-23 4l

Abstract: transistor 3em
Contextual Info: MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon http://onsemi.com Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

LMBT4401WT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Contextual Info: MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements

transistor y21 sot-23

Abstract: MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6
Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements

Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and

Contextual Info: MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site LMBT4401LT1G S-LMBT4401LT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Contextual Info: BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • COLLECTOR 3 Compliant NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101

Contextual Info: MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: BF720T1G, SBF720T1G, BF720T3G NPN Silicon Transistor Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MMBT3904LT3G

Abstract: sot-23 Marking 1am
Contextual Info: MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • http://onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and

K 1358 fet transistor

Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.

LMBT3908LT1G

Abstract: 1AM 6 1AM c
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a • Pb−Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

SBCW72LT1G

Contextual Info: BCW72LT1G, SBCW72LT1G General Purpose Transistor NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique http://onsemi.com Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SMMBT6521LT1G

Contextual Info: MMBT6521LT1G, SMMBT6521LT1G Amplifier Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM H V V0912-150 H igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle

SMMBT3906LT1G

Abstract: SMMBT3906L MMBT3906LT1-D MMBT3906L
Contextual Info: MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NPN 300 VOLTS vce POWER TRANSISTOR

Abstract: SMMBT6427LT1G
Contextual Info: MMBT6427LT1G, SMMBT6427LT1G Darlington Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS