CHANGE TRANSISTOR PARAMETERS Search Results
CHANGE TRANSISTOR PARAMETERS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
2SC6026MFV |
![]() |
NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
![]() |
NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
![]() |
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
![]() |
PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
![]() |
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
CHANGE TRANSISTOR PARAMETERS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN# 15-026 NOTIFICATION DATE: May 13, 2015 MODEL(S) AFFECTED: ROS-480+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate, |
Original |
D4-E000-73) ROS-480+ 10kHz PCN15-026 M135112 D3-E040 | |
Dielectric Resonator Oscillator DRO
Abstract: yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836
|
Original |
5968-3628E Dielectric Resonator Oscillator DRO yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836 | |
Contextual Info: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN#15-027 NOTIFICATION DATE: May 13, 2015 MODEL(S) AFFECTED: JTOS-1300+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate, |
Original |
D4-E000-73) JTOS-1300+ PCN15-027 M135112 D3-E040 | |
Contextual Info: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN#15-037 NOTIFICATION DATE: June 12, 2015 MODEL(S) AFFECTED: ROS-3800+ & ZX95-3800-S+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate, |
Original |
D4-E000-73) ROS-3800+ ZX95-3800-S+ 100kHz PCN15-037 M135112 D3-E040 | |
Contextual Info: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN# 15-008 NOTIFICATION DATE: March 3, 2015 MODEL(S) AFFECTED: ROS-3250-519+ ZX95-3250+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate, |
Original |
D4-E000-73) ROS-3250-519+ ZX95-3250+ PCN15-008 M135112 D3-E040 | |
318dContextual Info: MSD602-RT1G, SMSD602-RT1G NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable |
Original |
MSD602-RT1G, SMSD602-RT1G MSD602â 318d | |
SPZT3904T1G
Abstract: transistor marking 1am
|
Original |
PZT3904T1G, SPZT3904T1G AEC-Q101 OT-223 PZT3904T1/D transistor marking 1am | |
Contextual Info: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E |
Original |
PZT3904T1G, SPZT3904T1G PZT3904T1/D | |
Contextual Info: PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon http://onsemi.com Features • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable |
Original |
PZTA92T1G, NSVPZTA92T1G PZTA42T1G PZTA92T1/D | |
SMMBT5401LT1G
Abstract: MMBT5401LT1G
|
Original |
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G AEC-Q101 OT-23 O-236) MMBT5401LT1/D SMMBT5401LT1G MMBT5401LT1G | |
Contextual Info: MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http://onsemi.com Features • Moisture Sensitivity Level: 1 • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable |
Original |
MBT2222ADW1, NSVBT2222ADW1 AEC-Q101 SC-88/SC70-6/SOT-363 MBT2222ADW1T1/D | |
Contextual Info: PZTA42T1G High Voltage Transistor Surface Mount NPN Silicon http://onsemi.com Features • PZTA42T1G is Complement to PZTA92T1G • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and |
Original |
PZTA42T1G PZTA92T1G AEC-Q101 OT-223 PZTA42T1/D | |
Contextual Info: MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236 |
Original |
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G AEC-Q101 OT-23 O-236) MMBT5401LT1/D | |
Contextual Info: MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236 |
Original |
MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G MMBT5401LT1/D | |
|
|||
LMBT4401WT1GContextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. |
Original |
AEC-Q101 LMBT4401WT1G S-LMBT4401WT1G LMBT4401WT3G S-LMBT4401WT3G 3000/Tape 10000/Tape SC-70 LMBT4401WT1G | |
Contextual Info: MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements |
Original |
MBT35200MT1 AEC-Q101 MBT35200MT1/D | |
Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements |
Original |
MMBFJ309L, MMBFJ310L, SMMBFJ310L MMBFJ309LT1/D | |
transistor y21 sot-23
Abstract: MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6
|
Original |
MMBFJ309L, MMBFJ310L, SMMBFJ310L AEC-Q101 OT-23 O-236) MMBFJ309LT1/D transistor y21 sot-23 MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6 | |
Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and |
Original |
MMBFJ309L, MMBFJ310L, SMMBFJ310L AEC-Q101 OT-23 O-236) MMBFJ309LT1/D | |
Contextual Info: BF720T1G, SBF720T1G, BF720T3G NPN Silicon Transistor Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
Original |
BF720T1G, SBF720T1G, BF720T3G BF720T1/D | |
Contextual Info: MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
Original |
MMBT5087L MMBT5087LT1/D | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site LMBT4401LT1G S-LMBT4401LT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. |
Original |
LMBT4401LT1G S-LMBT4401LT1G AEC-Q101 LMBT4401LT3G S-LMBT4401LT3G 3000/Tape 10000/Tape LMBT4401LT1G | |
Contextual Info: BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • COLLECTOR 3 Compliant NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 |
Original |
BSS63LT1G, NSVBSS63LT1G AEC-Q101 BSS63LT1/D | |
SMMBT4403LT1G
Abstract: SMMBT4403L
|
Original |
MMBT4403L, SMMBT4403L AEC-Q101 OT-23 O-236) MMBT4403LT1/D SMMBT4403LT1G |