CGS RESISTOR Search Results

Contextual Info: LowOhmic Resistors m Meggitft CGS moulded for current sensing Key features • flexible manufacturing • tolerances from 1% to 5% • robust silicone moulding • high power to size ratio • temperature range -55SC - +275°C • low inductance < 20 nanno-henries

Contextual Info: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistors - Custom Capability TYPE CJS SERIES The CJS is a new family of mineral insulated resistors. Developed as damping resistors for High Voltage G.T.O.

Contextual Info: High Voltage Resistors E E S Meggitt CGS planar thick film Key features • element voltage up to 20kv • excellent size to power ratio • values up to 1 gigohm • high reliability • low noise at low values • attractively priced • custom design welcomed

Contextual Info: High Power Resistors Q Meggitt CGS thick film /m e ta l alloy - upto 30 watts Key features * sm all dim ensions * pow er rating - 3 0 w atts * non inductive • values down to R01 * tolerances fro m 0.2% * tem p coeff down to lOppm * fla m e p ro o f construction

RIO 1R0

Abstract: RIO+1R0
Contextual Info: Meggitt CGS A S e le c t io n G u i d e t o S p e c i a l R e s is t o r s Meggitt Electronic Components offer a comprehensive range of special resistors with wire, metal film, metal oxide, foil and solid carbon elements. Housings include enamel, silicone,

Contextual Info: High Ohmic Value Resistors ^ Meggitt CGS c e ra m ic p la te - u p to 3 0 K V K e y fe a tu re s • element voltage up to 30KV « excellent power to size ratio • non inductive • low noise at low values • custom designs welcome • value up to 1 teraohm

Contextual Info: Meggitt CGS High Power Resistor Selection Guide A Selection Guide to High Power Resistors Maximum Power Value Range Element Technology Heatsink Required 3 0 0 W a tts R 051 ~ 82K W ire Y es 9 0 0 W a tts R 5 0 ~ 62K W ire 6 0 0 W a tts R 50~62K 1 0 0 0 W a tts

Contextual Info: Power MOSFET Electrical Characteristics Power MOSFET in Detail 4. Electrical Characteristics 4.1 Terminology The following is an explanation of main items used to evaluate power MOSFET performance. 1 |Yfs|: forward transfer admittance |Yfs| = ΔID/ΔVGS

P4N50

Abstract: TP4N50 AR175 MTM20N08 motorola mosfet 1986 TMOS spice model Nippon capacitors motorola EPI
Contextual Info: AR175 A POWER FET SPICE MODEL FROM DATA SHEET SPECS by Gary Fay Device Design Manager Judy Sutor Development Engineer Reprinted with permission of POWERTECHNICS, August 1986 issue. 1986 Darnell Research Inc. All Rights Reserved. M OTOROLA < 8 >Semiconductor

MP8110

Abstract: MP8110DK-LF-Z MP8110DKLFZ MP8110DK MO-187 MP8103
Contextual Info: MP8110 Precision High-Side Current-Sense Amplifier The Future of Analog IC Technology DESCRIPTION FEATURES The MP8110 is a low-cost, precision, high-side current-sense amplifier. This device operates from a single 2.5V to 40V supply and typically consumes 12µA. It is ideal for today’s notebook

REG IC 48V IN 12V 10A OUT

Abstract: 48vdc smps circuit diagram 48V SMPS smps 48v 12v circuit diagram of mosfet based smps power supply 48V SMPS circuit REG IC 48V 40A 48V 10A SMPS circuit diagram REG IC 48V 5V 18V 10A OUT REG IC 48V IN 12V 10A OUT ic
Contextual Info: ISL6144 Data Sheet February 2004 FN9131 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.

mec 10w resistor

Abstract: mec CGS
Contextual Info: M EC C G S HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS SMD Low O hm ic - C urrent Sense Resistors TYPE RL73 SERIES M E C CG S are pleased to offer this u n iq u e H ig h Power, thick film chip resistor for cu rren t sensing positions. It has

R5F21276SNFP

Abstract: R5F2127 32.768kHz CRYSTAL. 419 65KOHM hh 004 f
Contextual Info: R8C/26-29 31-Aug-06 Evaluation of Subsystem Clock Oscillation Circuit [R5F21276SN-32P] QFP 7x7 0.80mm pitch Measurement conditions : 3.3V Model Vcc=2.2 to 5.5V :SSP-T7 Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=7.0pF

siliconix sd210

Abstract: SD210 SD5000 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400
Contextual Info: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application examples, test data, and other application hints.

vt200 seiko

Abstract: 892 X1 HD64N3687GFP VT200
Contextual Info: H8/3687N 25-May-04 Evaluation of Subsystem Clock Oscillation Circuit 【HD64N3687GFP-64E】 LQFP 10x10 0.50mm pitch Measurement conditions : 5.0V （in use of regulator）, 3.3V （non use of regulator） •FEATURES Vcc=3.0 to 5.5V Model ：VT-200 Frequency

M30626FJPFP

Abstract: VT-200
Contextual Info: M16C/62P 01-Mar-05 Evaluation of Subsystem Clock Oscillation Circuit [M30626FJPFP-100P] QFP 14x20 0.65mm pitch Measurement conditions : 5.0V Model Vcc=2.7 to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=6.0pF

R5F21256SNFP

Abstract: 35108 R5F21256SNFP-52P VT-200 R5F21256S r5f21256sn
Contextual Info: R8C/24,25 20-Dec-05 Evaluation of Subsystem Clock Oscillation Circuit [R5F21256SNFP-52P] QFP 10x10 0.65mm pitch Measurement conditions : 3.3V Model Vcc=2.2 to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance

A CLIPPER CIRCUIT APPLICATIONS

Abstract: sd5000 SD210 future scope of jfet sd211 SD5000I sst211 sot-143 VSB uhf modulator analog jfet transistor n-channel to 92 FAST DMOS FET Switches
Contextual Info: High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application

SP-T2A-12.5pF

Abstract: M3823AGFFP M3823AGFFP-80P
Contextual Info: 3823 07-Sep-06 Evaluation of Subsystem Clock Oscillation Circuit [M3823AGFFP-80P] PQFP 14x20 0.80mm pitch Measurement conditions :3.3V, 5.0V Model Vcc=1.8V to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=12.5pF

M37548G3FP

Abstract: VT-200
Contextual Info: 740 16-Feb-07 Evaluation of Subsystem Clock Oscillation Circuit [M37548G3FP-20P] LSSOP 4.4x6.5 0.65mm pitch Measurement conditions :5.5V, 3.3V Model Vcc=1.8V to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance

M38235G6FP

Abstract: VT-200
Contextual Info: 3823 07-Sep-06 Evaluation of Subsystem Clock Oscillation Circuit [M38235G6FP-80P] PQFP 14x20 0.80mm pitch Measurement conditions :3.3V, 5.0V Model Vcc=1.8V to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance

diode T7

Abstract: M38D59GFHP
Contextual Info: M38D5 13-Jul-06 Evaluation of Subsystem Clock Oscillation Circuit [M38D59GFHP-80P] LQFP 12x12 0.5mm pitch Measurement conditions :3.3V, 5.0V Model Vcc=1.8V to 5.5V :SSP-T7 Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=7.0pF

M38D58G8HP-80P

Abstract: M38D58G8HP 327629
Contextual Info: M38D5 22-Jul-05 Evaluation of Subsystem Clock Oscillation Circuit [M38D58G8HP-80P] LQFP 12x12 0.5mm pitch Measurement conditions :3.3V, 5.0V Model Vcc=1.8V to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=6.0pF

M38D59GFHP

Contextual Info: M38D5 24-Jul-06 Evaluation of Subsystem Clock Oscillation Circuit [M38D59GFHP-80P] LQFP 12x12 0.5mm pitch Measurement conditions :3.3V, 5.0V Model Vcc=1.8V to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=12.5pF