CGHV27300MP Search Results

Contextual Info: PRELIMINARY CGHV27300MP 300 W, 2300-2700 MHz, GaN HEMT for LTE Cree’s CGHV27300MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27300MP ideal for 2.32.7 GHz LTE and BWA amplifier applications. The transistor is input matched