CFH MARKING Search Results

01248

Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

zo 607 MA

Abstract: 4948 CFH400 pHEMT FET marking A
Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

CFH120-08

Contextual Info: CFH 120-08 Datasheet Low Noise pHEMT Packaged FET Description: The CFH 120-08 is a high linearity, very low noise pHEMT FET for general purpose, low noise front-end applications. Noise figures as low as 0.65 dB with associated gain of 12 dB are achievable at 12 GHz

sot43

Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

ZO 607 MA

Abstract: 4948 ta 6203 CFH400 Q62702-G0116
Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

Contextual Info: CFH 120-08 Datasheet Low Noise pHEMT Packaged FET Description: The CFH 120-08 is a high linearity, very low noise pHEMT FET for general purpose, low noise front-end applications. Noise figures as low as 0.65 dB with associated gain of 12 dB are achievable at 12 GHz

dual npn 500ma

Abstract: NPN/PNP transistor CTLM3410-M832D CTLM3474-M832D CTLM7410-M832D TLM832D v30010
Contextual Info: CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D SURFACE MOUNT DUAL, LOW VCE SAT SILICON TRANSISTORS Top View Bottom View TLM832D CASE MARKING CODES: CTLM3410-M832D: CFG CTLM7410-M832D: CFH CTLM3474-M832D: CFJ APPLICATIONS • Switching Circuits • DC / DC Converters

GSO05553

Abstract: Q62702-G117 CFH77 HEMT marking P
Contextual Info: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code

cfh marking

Abstract: smd marking zz
Contextual Info: Mechanical Dimensions CFH Series Crystal 3.2x2.5x.80mm Ceramic SMD RoHS Compliant 12.000MHz to 50.000MHz Dimensions are in millimeters Electrical SpecificaƟons Frequency Range 12.00MHz to 50.000MHz OperaƟng Temperature Range -10° to 60°C, -20 to 70°C or –40° to 85°C

74923

Abstract: dg s22
Contextual Info: Infineon ^«cfrnciogies P-HEMT CFH 400T Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; Ga = 15.8 dB @ 3 V; 1 0 m A ;/= 1.8 GHz • • Suitable for PCS CDMA and UMTS applications

k0604

Abstract: MAX 8985 zo 607 p 408 8772 P pseudomorphic HEMT GSO05553 S221 Q62705-K0603 ZO 607 MA 135
Contextual Info: GaAs HEMT CFH 120 Preliminary Data Sheet • • • • • Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz 3 2 4 1 ESD: Electrostatic discharge sensitive device,

NPN/PNP transistor

Abstract: CTLM3410M832D CTLM3410-M832D CTLM3474-M832D CTLM7410-M832D TLM832D
Contextual Info: CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D SURFACE MOUNT DUAL, LOW VCE SAT SILICON TRANSISTORS TLM832D CASE MARKING CODES: CTLM3410-M832D: CFG CTLM7410-M832D: CFH CTLM3474-M832D: CFJ APPLICATIONS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM3410M832D (Dual NPN), CTLM7410-M832D (Dual PNP),

transistor SMD MARKING CODE 772

Abstract: smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404
Contextual Info: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1

UMTS

Abstract: 6943-3
Contextual Info: In fineon *B£ h C IOQ ¡ Ùi P-HEMT CFH 800 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F = 0.52 dB; GA = 15.2 dB @ 3 V; 20 mA; / = 1.8 GHz

transistor s11 s12 s21 s22

Abstract: SMD MARKING CODE WG sot-343 smd marking 1331 sot 6943-3 SMD TRANSISTOR 701 325 diode din 4147 GPS05605 marking code s22 smd marking s22 cfh marking
Contextual Info: P-HEMT CFH 800 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F = 0.52 dB; GA = 15.2 dB @ 3 V; 20 mA; f = 1.8 GHz • Low cost miniature package P-SOT343-4-1

42827

Contextual Info: P-HEMT CFH 800T Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F = 0.52 dB; GA = 14.5 dB @ 3 V; 20 mA; f = 1.8 GHz • Low cost ultra miniature package P-TSFP-4

transistor SMD MARKING CODE 772

Abstract: SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607
Contextual Info: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1

Contextual Info: Infineon b i i c l ü ç i i es P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz jp = 0.55 dB; Ga - 15.7 dB @ 3 V; 1 0 m A ;/= 1.8 GHz • Suitable for PCS CDMA and UMTS applications

SMD MARKING CODE WG sot-343

Abstract: ZO 103 MA 75 715 smd marking s22 SMD TRANSISTOR 701 325 SMD CODE MARKING 1046 smd marking 271 Sot smd transistor marking GA 04435
Contextual Info: P-HEMT CFH 800 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F = 0.52 dB; GA = 15.2 dB @ 3 V; 20 mA; f = 1.8 GHz • Low cost miniature package P-SOT343-4-1

SMD CODE MARKING 1046

Abstract: 74923 72482
Contextual Info: P-HEMT CFH 400T Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.8 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost ultra miniature package P-TSFP-4

smd code book

Abstract: SMD MARKING CODE WG 4.00t
Contextual Info: GaAs HEMT CFH 400T Target Data Sheet • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4 GHz F = 0.65 dB; Ga = 17.5 dB @ 3 V; 15 mA; f = 2 GHz Suitable for PCS CDMA and UMTS applications Low cost ultra miniature package P-TSFP-4-1

P-SOT-143

Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
Contextual Info: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1

Q68000-A8370

Abstract: CGY MW
Contextual Info: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215

377 03397

Abstract: marking h3s Q62705-K0604
Contextual Info: In fineon ! « £ h n c> o $ i e s G aA sH E M T C F H 120 Preliminary Data Sheet • • • • • Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz