CET451AN Search Results
CET451AN Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CET451AN | Chino-Excel Technology | N-Channel Enhancement Mode Field Effect Transistor | Original | 40.34KB | 5 | ||
| CET451AN | Chino-Excel Technology | N-Channel Enhancement Mode Field Effect Transistor | Scan | 506.18KB | 5 |
CET451AN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CET451ANContextual Info: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 30V, 7.2A, R ds o n =35 itiQ @Vgs=10V. R d s (o n )=50 it iî 2 @Vgs=4.5V. • High dense cell design for low R d s <o n ). • Rugged and reliable. • SOT-223 Package. |
OCR Scan |
CET451AN 35itiq OT-223 OT-223 CET451AN | |
CET451ANContextual Info: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 7.2A , RDS ON =35mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. 8 G D S D S D SOT-223 S G G SOT-223 (J23Z) |
Original |
CET451AN OT-223 OT-223 CET451AN | |
CET451ANContextual Info: CET451AN N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.2A, RDS ON = 35mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. |
Original |
CET451AN OT-223 OT-223 CET451AN |