CET4401B Search Results
CET4401B Datasheets Context Search
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Contextual Info: CET4401B P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.9A, RDS ON = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. D SOT-223 package. |
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CET4401B OT-223 OT-223 |