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    CEP3120 TRANSISTOR Search Results

    CEP3120 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    		Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy

    CEP3120 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEP3120

    Contextual Info: CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP3120/CEB3120 O-220 O-263 CEP3120 PDF

    CEP3120

    Abstract: CEB3120 cep3120 TRANSISTOR
    Contextual Info: CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP3120/CEB3120 O-220 O-263 CEP3120 CEB3120 cep3120 TRANSISTOR PDF

    CEP3120

    Abstract: ceb3120
    Contextual Info: CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP3120/CEB3120 O-220 O-263 CEP3120 ceb3120 PDF