Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CEIF634 Search Results

    CEIF634 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEIF634
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 85.51KB 4

    CEIF634 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEBF634

    Abstract: CEFF634 CEIF634 CEPF634
    Contextual Info: CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF634 250V 0.45Ω 8.1A 10V CEBF634 250V 0.45Ω 8.1A 10V CEIF634 250V 0.45Ω 8.1A CEFF634 250V 0.45Ω 8.1A 10V d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEPF634/CEBF634 CEIF634/CEFF634 CEPF634 CEBF634 CEIF634 CEFF634 O-220 O-263 O-262 O-220F CEBF634 CEFF634 CEIF634 CEPF634 PDF

    CEPF634

    Abstract: CEBF634 CEFF634 CEIF634 S925
    Contextual Info: CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF634 250V 0.45Ω 8.1A 10V CEBF634 250V 0.45Ω 8.1A 10V CEIF634 250V 0.45Ω 8.1A CEFF634 250V 0.45Ω 8.1A 10V d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEPF634/CEBF634 CEIF634/CEFF634 CEPF634 CEBF634 CEIF634 CEFF634 O-220 O-263 O-262 O-220F CEPF634 CEBF634 CEFF634 CEIF634 S925 PDF

    CEBF634

    Abstract: CEFF634 CEIF634 CEPF634
    Contextual Info: CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF634 250V 0.45Ω 8.1A 10V CEBF634 250V 0.45Ω 8.1A 10V CEIF634 250V 0.45Ω 8.1A CEFF634 250V 0.45Ω 8.1A 10V d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEPF634/CEBF634 CEIF634/CEFF634 CEPF634 CEBF634 CEIF634 CEFF634 O-220 O-263 O-262 O-220F CEBF634 CEFF634 CEIF634 CEPF634 PDF

    CEBF634

    Abstract: CEFF634 CEIF634 CEPF634
    Contextual Info: CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF634 250V 0.45Ω 8.1A 10V CEBF634 250V 0.45Ω 8.1A 10V CEIF634 250V 0.45Ω 8.1A CEFF634 250V 0.45Ω 8.1A 10V d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEPF634/CEBF634 CEIF634/CEFF634 CEPF634 CEBF634 CEIF634 CEFF634 O-220 O-263 O-262 O-220F CEBF634 CEFF634 CEIF634 CEPF634 PDF