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    CEFF634 Search Results

    CEFF634 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEFF634
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 85.51KB 4

    CEFF634 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEBF634

    Abstract: CEFF634 CEIF634 CEPF634
    Contextual Info: CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF634 250V 0.45Ω 8.1A 10V CEBF634 250V 0.45Ω 8.1A 10V CEIF634 250V 0.45Ω 8.1A CEFF634 250V 0.45Ω 8.1A 10V d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEPF634/CEBF634 CEIF634/CEFF634 CEPF634 CEBF634 CEIF634 CEFF634 O-220 O-263 O-262 O-220F CEBF634 CEFF634 CEIF634 CEPF634 PDF

    CEPF634

    Abstract: CEBF634 CEFF634 CEIF634 S925
    Contextual Info: CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF634 250V 0.45Ω 8.1A 10V CEBF634 250V 0.45Ω 8.1A 10V CEIF634 250V 0.45Ω 8.1A CEFF634 250V 0.45Ω 8.1A 10V d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEPF634/CEBF634 CEIF634/CEFF634 CEPF634 CEBF634 CEIF634 CEFF634 O-220 O-263 O-262 O-220F CEPF634 CEBF634 CEFF634 CEIF634 S925 PDF

    CEFF634

    Contextual Info: CEFF634 Nov. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 D 250V , 6A , RDS ON =450m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole


    Original     		CEFF634 O-220F O-220F CEFF634 PDF

    CEBF634

    Abstract: CEFF634 CEIF634 CEPF634
    Contextual Info: CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF634 250V 0.45Ω 8.1A 10V CEBF634 250V 0.45Ω 8.1A 10V CEIF634 250V 0.45Ω 8.1A CEFF634 250V 0.45Ω 8.1A 10V d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEPF634/CEBF634 CEIF634/CEFF634 CEPF634 CEBF634 CEIF634 CEFF634 O-220 O-263 O-262 O-220F CEBF634 CEFF634 CEIF634 CEPF634 PDF

    CEBF634

    Abstract: CEFF634 CEIF634 CEPF634
    Contextual Info: CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF634 250V 0.45Ω 8.1A 10V CEBF634 250V 0.45Ω 8.1A 10V CEIF634 250V 0.45Ω 8.1A CEFF634 250V 0.45Ω 8.1A 10V d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEPF634/CEBF634 CEIF634/CEFF634 CEPF634 CEBF634 CEIF634 CEFF634 O-220 O-263 O-262 O-220F CEBF634 CEFF634 CEIF634 CEPF634 PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF