CEF TI Search Results

molex 22-01

Contextual Info: Order Code Model Num ber Output Voltage4 Minim um Load5 Maxim um Load w/ 30CFM A ir6 Peak Load1 Regulation2 Ripple P/P PA R D 3 289-5131 LPS252-CEF 5 V (3-6V) 1.50 A 50A 60A ±2% 50 mV 289-5147 LPS253-CEF 12V (6-12V) 0.63 A 21 A 25A ±2% 120mV 289-5153 LPS254-CEF

LPQ252

Abstract: lpq252-cef lpq253
Contextual Info: Model Num ber O utput Voltage M inim um Load5 Maxim um Load w /3 0 C F M A ir6 Peak Load1 Regulation2 Ripple P /P P A R D 3 LPQ252-CEF 5 V 12 V -12 V ± 5 -2 5 V4 3 A A A A 35A 10A 6A 6A 40A 12A 8A 8A ±2% ±3% ±3% ±3% 50 mV 120 mV 120 mV 240 mV max LPQ253-CEF 5 V

rf pogo pin

Abstract: AVX TAZ sj 6357 military connectors AVX film chip capacitors 2 sj 6357 ks pogo pin MIL-C-23269 avx polYESTER capacitors 14 pin zif connector 0.3mm FPC
Contextual Info: / à\W < A KYO CERA GRO U P COMPANY Product Guide for_ High Rei & Military appiications The Complete list of Application Guides available: A K YO CEFÎA G R O U P C O M P A N Y Automotive Consumer EDP High Rel and Military Industrial Mobile Communications

LPQ352-C

Abstract: LPQ350-CEF IEC801-2 IEC801-4 IEC801-5 LPQ353-C IEC-801-4 22-01-2085 molex 22-01-1102
Contextual Info: Installation Notes LPQ350-CEF Series 350 Watts Input Specifications Quad Outputs Output Specifications Input range 85 VAC to 264VAC 120 VDC to 370 VDC Maximum wattage 350W Frequency 47 - 440 Hz Adjustment range ± 5% on output 1 3.3V - 24V on output 4 Inrush current

Contextual Info: / S ' t- Approvals: ATTENUATION IN 50 OHM-50 OHM CIRCUIT ACCORDING CISPR PA01F 1 AMP Circuit I CEf P q- 1 c s — t PA03F (3 AMP) mA NM ? 2 — ~o -*• § k -• ' CM N \J t " r > 1}- t r V :P a n n a - 1-vJLSUULr- t - - L -

Contextual Info: FEATURES • 1 0 -2 0 0 0 MHz J MODEL NO. ■ -30 to -10 dBm Dynamic Range CEf ■ Adjustable Threshold Level DTD01904 TTL Compatible Threshold Detector ■ 1 mA Sink/Source Current ■ 5 Pin TO-8 Package R E S IS T O R CONTROL •XX •X XX = = .02 .010 +5V

AT29C040A

Abstract: AT29C432 AT29C432-12 AT29C432-12TC AT29C432-12TI AT29C432-15 AT29C432-15TC AT29C432-15TI
Contextual Info: Features • • • • • ConcurrentFlash Memory Unique Architecture Allows the Flash Array To Be Read During the E2PROM Write Cycle 4 Megabit 5-volt Flash Configured as a 512K x 8 Memory Array 120 ns Read Access Time Sector Program Operation Single Cycle Reprogram No Erase Necessary

Contextual Info: Features • • • • • ConcurrentFlash Memory Unique Architecture Allows the Flash Array To Be Read During the E2PROM Write Cycle 4 Megabit 5-volt Flash Configured as a 512K x 8 Memory Array 120 ns Read Access Time Sector Program Operation Single Cycle Reprogram No Erase Necessary

Contextual Info: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-22003 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 8M-BIT FLASH MEMORY AND 2M-BIT SRAM D e s c r ip tio n The MC-22003 is a MCP (Multi-Chip Package) of 8,388,608 mode : 524,288 words by 16 bits) flash memory and 2,097,152

Contextual Info: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-22006 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 8M-BIT FLASH MEMORY AND 1M-BIT SRAM D e s c r ip tio n The MC-22006 is a MCP (Multi-Chip Package) of 8,388,608 bits (Byte mode : 1,048,576 words by 8 bits, W ord

MB84VA2000

Abstract: F9805
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50101-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2000-10/MB84VA2001-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

Contextual Info: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-22007 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 8M-BIT FLASH MEMORY AND 1M-BIT SRAM D e s c r ip tio n The MC-22007 is a MCP (Multi-Chip Package) of 8,388,608 bits (Byte mode : 1,048,576 words by 8 bits, W ord

Contextual Info: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-22001 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 8M-BIT FLASH MEMORY AND 2M-BIT SRAM D e s c r ip tio n The MC-22001 is a MCP (Multi-Chip Package) of 8,388,608 bits (1,048,576 words by 8 bits) flash memory and

MB84VA2004

Abstract: MB84VA2005
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50106-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8) FLASH MEMORY & 1M (× 8) STATIC RAM MB84VA2004-10/MB84VA2005-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

Contextual Info: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-22002 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 8M-BIT FLASH MEMORY AND 2M-BIT SRAM D e s c r ip tio n The MC-22002 is a MCP (Multi-Chip Package) of 8,388,608 mode : 524,288 words by 16 bits) flash memory and 2,097,152

Contextual Info: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-22000 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 8M-BIT FLASH MEMORY AND 2M-BIT SRAM D e s c r ip tio n The MC-22000 is a MCP (Multi-Chip Package) of 8,388,608 bits (1,048,576 words by 8 bits) flash memory and

MB84VA2006

Abstract: MB84VA2007
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50107-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8/× 16) FLASH MEMORY & 1M (× 8) STATIC RAM MB84VA2006-10/MB84VA2007-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

MB84VA2102

Abstract: MB84VA2103 67FFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50104-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2102-10/MB84VA2103-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

Multi Chip Memory

Contextual Info: ADVANCED INFORMATION MX69LW3221/3241T/B 32M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

Multi Chip Memory

Abstract: 40000h
Contextual Info: ADVANCED INFORMATION MX69LW162/164T/B 16M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

MB84VA2106

Abstract: MB84VA2107
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50109-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x16) FLASH MEMORY & 1M (× 8) STATIC RAM MB84VA2106-10/MB84VA2107-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

MB84VA2002

Abstract: MB84VA2003
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50105-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2002-10/MB84VA2003-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

Contextual Info: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-22102 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 16M-BIT FLASH MEMORY AND 2M-BIT SRAM D e s c r ip tio n The MC-22102 is a MCP (Multi-Chip Package) of 16,777,216 bits (1,048,576 words by 16 bits) flash memory and

Contextual Info: ADVANCED INFORMATION MX69LW162/164T/B 16M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C