CEF 83 A 3 Search Results

Contextual Info: 1234567893A66B4C 93DCEFC2CECEFCEE 33C2 1234546789A8BC7DCEF8 254728F88A8  F3 !" # !$"!!%#3&9D7'936B62 9 3! 2 "C 56A5C #$%

CEF 83 A 3

Abstract: flash 8m*16bit wes 237
Contextual Info: ADVANCED INFORMATION MX69LW12832T/B/U/D 128M-BIT [X16] FLASH AND 32M-BIT [X16] PSEUDO SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage VCCf : 2.7V to 3.6V • Fast access time: Flash memory:70ns SRAM memory:70ns • Operation temperature range: -40 ~ 85°C

Multi Chip Memory

Contextual Info: ADVANCED INFORMATION MX69F1602/1604C3T/B 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

Multi Chip Memory

Contextual Info: ADVANCED INFORMATION MX28F1602/1604C3T/B 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

Multi Chip Memory

Contextual Info: ADVANCED INFORMATION MX69F1602/1604C3T/B 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

Multi Chip Memory

Contextual Info: ADVANCED INFORMATION MX69F3204C3T/B 32M-BIT [X16] FLASH AND 4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

4kw marking

Abstract: MB84VF5F4F4J1-70 MBM29DL64DF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50403-1E 3 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J1-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V

Contextual Info: SKiM 220GD176D H4 Absolute Maximum Ratings Symbol Conditions IGBT 789, B8 B8PQ 7S9, .U I.+4'K .0%; SKiM 4 SKiM 220GD176D H4 Preliminary Data Features # $%&%' %*+ ,# ./()01 2 ./()01'34( .(01)%5%'6 # 789+34 :-41 ;%+-4-<( 4(&;(/34*/( 0%(=-0-()4 $-'1 +1%/4 0-/0*-4 03;3>-5-46? +(5=

Contextual Info: MB84VF5F4F4J1-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

MBM29DL64DF

Abstract: vccf1 7FF000H SA93
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

abt3612-15

Abstract: IC51-1324-828 SN74ABT3612 ABT3612
Contextual Info: SN74ABT3612 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SCBS129G – JULY 1992 – REVISED APRIL 1998 D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs Buffering Data in Opposite Directions

Contextual Info: SN74ABT3612 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SCBS129G – JULY 1992 – REVISED APRIL 1998 D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs Buffering Data in Opposite Directions

IC51-1324-828

Abstract: SN74ABT3612 ABT3612-15 Level-4-260C-72HR
Contextual Info: SN74ABT3612 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SCBS129G – JULY 1992 – REVISED APRIL 1998 D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs Buffering Data in Opposite Directions

Contextual Info: SN74ABT3612 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SCBS129G – JULY 1992 – REVISED APRIL 1998 D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs Buffering Data in Opposite Directions

Contextual Info: SN74ABT3612 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SCBS129G – JULY 1992 – REVISED APRIL 1998 D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs Buffering Data in Opposite Directions

ABT3612-15

Abstract: IC51-1324-828 SN74ABT3612
Contextual Info: SN74ABT3612 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SCBS129G – JULY 1992 – REVISED APRIL 1998 D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs Buffering Data in Opposite Directions

SA-194

Abstract: SA214 MB84SF6H6H6L2-70 SPECIFICATION SA210 SA247
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: SN54ABT3614 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY WITH BUS MATCHING AND BYTE SWAPPING SGBS308F – AUGUST 1995 – REVISED MAY 2000 D D D D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs

Contextual Info: SN54ABT3614 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY WITH BUS MATCHING AND BYTE SWAPPING SGBS308F – AUGUST 1995 – REVISED MAY 2000 D D D D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs

Contextual Info: SN54ABT3614 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY WITH BUS MATCHING AND BYTE SWAPPING SGBS308F – AUGUST 1995 – REVISED MAY 2000 D D D D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs

Contextual Info: SN54ABT3614 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY WITH BUS MATCHING AND BYTE SWAPPING SGBS308F – AUGUST 1995 – REVISED MAY 2000 D D D D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs

Contextual Info: SN54ABT3614 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY WITH BUS MATCHING AND BYTE SWAPPING SGBS308F – AUGUST 1995 – REVISED MAY 2000 D D D D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs

IC51-1324-828

Abstract: SN74ABT3611
Contextual Info: SN74ABT3611 64 x 36 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCBS127E – JULY 1992 – REVISED APRIL 1998 D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident 64 × 36 Clocked FIFO Buffering Data From Port A to Port B Mailbox-Bypass Register In Each Direction

ceb65

Abstract: 15d60
Contextual Info: CEP655N/CEB655N CEI655N/CEF655N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP655N 150V 0.153Ω 15A 10V CEB655N 150V 0.153Ω 15A 10V CEI655N 150V 0.153Ω 15A CEF655N 150V 0.153Ω 15A 10V d 10V D Super high dense cell design for extremely low RDS(ON).