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    CE600 Search Results

    CE600 Datasheets (14)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge NCE6003Y
    		NCEPOWER NCE6003Y is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 105mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications. Original PDF
    badge NCE6003X
    		NCEPOWER NCE6003X is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-state resistance of less than 90mΩ at VGS=10V, suitable for battery protection and switching applications. Original PDF
    badge NCE6008AS
    		NCEPOWER 60V, 8A NCE6008AS enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 13.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, suitable for power switching and load switch applications in SOP-8 package. Original PDF
    badge NCE6003
    		NCEPOWER NCE6003 is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 105mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications. Original PDF
    badge NCE6009XS
    		NCEPOWER NCE6009XS is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 9A continuous drain current, and low on-resistance of 9.3mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in power switching applications. Original PDF
    badge NCE6009AS
    		NCEPOWER NCE6009AS is an N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 9A continuous drain current, and low on-resistance of 11mΩ typical at 10V gate-source voltage, suitable for power switching and load switch applications. Original PDF
    badge NCE6005AN
    		NCEPOWER NCE6005AN is a 60V, 5A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 26 mΩ at VGS=10V and low gate charge, suitable for high-frequency switching applications. Original PDF
    badge NCE6003XY
    		NCEPOWER NCE6003XY is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-resistance of less than 78mΩ at VGS=10V, suitable for battery protection and switching applications. Original PDF
    badge NCE6007S
    		NCEPOWER NCE6007S N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 7A continuous drain current, 24mΩ typical RDS(ON) at VGS=10V, and low gate charge, suitable for power switching and high-frequency applications. Original PDF
    badge NCE6005AR
    		NCEPOWER NCE6005AR is a channel enhancement mode power MOSFET with 60V drain-source voltage, 5A continuous drain current, and low on-resistance of 26mΩ typical at 10V gate-source voltage, using advanced trench technology for high efficiency in switching applications. Original PDF
    badge NCE6004
    		NCEPOWER NCE6004 is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 4A continuous drain current, and low on-resistance of less than 50mΩ at VGS=10V, suitable for battery protection and switching applications. Original PDF
    badge NCE6003M
    		NCEPOWER NCE6003M is an N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 100mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications. Original PDF
    badge NCE6005AS
    		NCEPOWER NCE6005AS is a channel enhancement mode power MOSFET with 60V drain-source voltage, 5A continuous drain current, and low on-resistance of 26mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. Original PDF
    badge NCE6003XM
    		NCEPOWER NCE6003XM is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 78mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications. Original PDF
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    CE600 Price and Stock

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    Panasonic Electronic Components EXC-X4CE600U

    CMC 100MA 2LN 60 OHM SMD
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    DigiKey () EXC-X4CE600U Cut Tape 9,034 1
    • 1 $0.27
    • 10 $0.22
    • 100 $0.18
    • 1000 $0.15
    • 10000 $0.14
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    EXC-X4CE600U Digi-Reel 9,034 1
    • 1 $0.24
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    • 100 $0.15
    • 1000 $0.11
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    Avnet Americas EXC-X4CE600U Reel 10,000
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    Master Electronics EXC-X4CE600U
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    KEMET Corporation ALA7DA181CE600

    CAP ALUM 180UF 20% 600V SNAP TH
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    DigiKey ALA7DA181CE600 Bulk 349 1
    • 1 $16.47
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    Avnet Americas ALA7DA181CE600 Box 1,120
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    Mouser Electronics ALA7DA181CE600 299
    • 1 $16.47
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    Newark ALA7DA181CE600 Bulk 160
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    RS ALA7DA181CE600 Bulk 34 Weeks 1,120
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    • 10000 $9.57
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    Pentair Equipment Protection - Hoffman SCE600

    CABLE ENTRY PLATE (2) 600
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    DigiKey SCE600 Bulk 1
    • 1 $115.97
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    Seiko Epson Corporation SG-211SCE-60.0000MH

    XTAL OSC XO 60.0000MHZ CMOS SMD
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    DigiKey SG-211SCE-60.0000MH
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    Seiko Epson Corporation SG-8002CE-6.0000M-PCMB

    XTAL OSC XO 6.0000MHZ CMOS SMD
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    DigiKey SG-8002CE-6.0000M-PCMB 50
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    Find more CE600 price and stock on Findchips.com

    CE600 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CD7577

    Abstract: D1557 transistor d1557 D146D 11.0592 MHz crystal da2000 CC4000 CC6000 D16000 D12000
    Contextual Info: Application Note AN011 AN011 Programming the CC1000 frequency for best sensitivity By S. Vetti Keywords • • • • • CC1000, frequency programming ISM band frequencies Optimum sensitivity Software compensation for crystal frequency errors Optimum frequencies for frequency hopping the 902-928 MHz band, USA FCC


    Original     		AN011 CC1000 CC1000, CD7577 D1557 transistor d1557 D146D 11.0592 MHz crystal da2000 CC4000 CC6000 D16000 D12000 PDF

    2SC6104

    Abstract: c6144 BT-183 asus schematic diagram asus RM04FTN2000 r63302 RM04FTN AC10P RM06FTN
    Contextual Info: A B C D E V6J SCHEMATIC V2.0 1 Content PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 1 Content PAGE POWER PAGE REF. YONAH CPU-1 YONAH CPU-2 CPU CAP & THERMAL SENSOR


    Original     		ICS954310 90Ohm/100Mhz 2SC6104 c6144 BT-183 asus schematic diagram asus RM04FTN2000 r63302 RM04FTN AC10P RM06FTN PDF

    Contextual Info: Accessories Channel Mounted Terminal Blocks Accessories Medium-Duty Channel Mount terminal blocks are rated at 600 VAC, 50 Amps. Terminal lugs are plated copper and have tubular screw contacts. Terminal wire range is from #22 through #8 AWG. Each terminal block top has a painted marking area


    Original     		CTB3005 CTE3001 CT6005 CE6001 5012A PDF

    smd 3ft

    Abstract: sta 512 smd CCK
    Contextual Info: ? CONVERTERS DC to DC TDK o ffers a w ide ra n g e o f low p ro file, com pact, ligh tw eigh t DC/DC con verters th a t p ro vid e sta n d a rd ized regu lated voltages w ith high efficiency. The high g ra d e m agnetic m aterial and design technology enables TDK to m eet m arket requirem ents f o r com puters, p erip h era ls,


    OCR Scan     		30x125x8 24x12x5 58x12 14-0514P« VRM-1214P6 N0f18 smd 3ft sta 512 smd CCK PDF

    RTS5116

    Abstract: RTM865T-300 RC415MD new bright R288 rqw130 RQA180N03 stac9200x5 APL5912 RC415M 40gab
    Contextual Info: 5 4 3 INTEL YONAH CPU EXTERNAL CLOCK GEN. RTM865T-300 2 INDICATOR BOARD CON 24 2 1 PCI BUS Celeron M GNT#/REQ# INTR IDSEL C/D AD25 MINI PCI uFCPGA 479 Pin 4, 5 AGTL+ 533MHz 4X DATA 2X ADDRESS D D ATI NB - RC415MD VGA CON 15 CRT 15 LVDS LVDS CON AGTL+ YONAH CPU I/F


    Original     		RTM865T-300 533MHz RC415MD SB600/SB460 150Kohm 68Kohm 47Kohm 82Kohm RTS5116 RC415MD new bright R288 rqw130 RQA180N03 stac9200x5 APL5912 RC415M 40gab PDF