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CE-5028
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TDK
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Original |
PDF
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66.57KB |
3 |
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CE-5029
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TDK
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Original |
PDF
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66.57KB |
3 |
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CE5038
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Intel
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DVB-S2 Advanced Modulation Satellite Tuner |
Original |
PDF
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494.08KB |
41 |
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CE50U
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ADAM Tech
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Connector: Board to Board Connector: F: 50: 2.54: THRU |
Original |
PDF
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718.03KB |
6 |
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CE50URC
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ADAM Tech
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Connector: Board to Board Connector: F: 50: 2.54: THRU |
Original |
PDF
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718.03KB |
6 |
NCE5080K
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NCEPOWER
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NCE5080K N-Channel Enhancement Mode Power MOSFET with 50V drain-source voltage, 80A continuous drain current, RDS(ON) less than 7.5mΩ at VGS=10V, and low gate charge for high-frequency switching applications. |
Original |
PDF
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NCE5015S
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NCEPOWER
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NCE5015S N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 15A continuous drain current, and low on-resistance of 7.6mΩ at 10V gate-source voltage, suitable for power switching and load switch applications. |
Original |
PDF
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NCE50TD120VT
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NCEPOWER
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1200V, 50A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-247 package. |
Original |
PDF
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NCE5055K
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NCEPOWER
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NCE5055K is an N-Channel Enhancement Mode Power MOSFET with 50V drain-source voltage, 55A continuous drain current, and low on-resistance of 12mΩ at VGS=10V, utilizing trench technology for high efficiency and thermal performance in switching applications. |
Original |
PDF
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NCE50TD120VTP
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NCEPOWER
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1200V, 50A Trench FSII Fast IGBT in TO-247P package with low VCE(sat), high-speed switching, positive temperature coefficient, and integrated diode for PV, solar inverters, and UPS applications. |
Original |
PDF
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NCE50TD120WT
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NCEPOWER
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1200V, 50A Trench FSII Fast IGBT in TO-247 package featuring low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for welding and industrial applications. |
Original |
PDF
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NCE5020Q
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NCEPOWER
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NCE5020Q is an N-Channel Enhancement Mode Power MOSFET with 50V drain-source voltage, 20A continuous drain current, and low RDS(ON) of 11.5mΩ typical at VGS=10V, housed in a DFN3.3x3.3-8L package. |
Original |
PDF
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NCE50TD120WW
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NCEPOWER
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1200V, 50A Trench FSII fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and integrated diode in TO-264 package. |
Original |
PDF
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NCE50TD120BT
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NCEPOWER
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1200V, 50A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-247 package. |
Original |
PDF
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NCE50TD120BP
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NCEPOWER
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1200V, 50A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-3P package. |
Original |
PDF
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NCE5080K
