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    CE-34 Search Results

    CE-34 Datasheets (24)

    NCEPOWER
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge NCE3407
    		NCEPOWER P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.6A continuous drain current, and low on-resistance of less than 95mΩ at VGS=-4.5V, available in SOT-23 surface mount package. Original PDF
    badge NCE3401A
    		NCEPOWER P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of less than 85mΩ at -2.5V gate-source voltage, suitable for load switch and PWM applications in SOT-23 package. Original PDF
    badge NCE3420
    		NCEPOWER 20V NCE3420 Channel Enhancement Mode Power MOSFET with 6A continuous drain current, RDS(ON) less than 40mΩ at VGS=2.5V, suitable for uni-directional and bi-directional load switch applications in a surface mount SOT-23 package. Original PDF
    badge NCE3400XY
    		NCEPOWER NCE3400XY is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.1A continuous drain current, and low on-resistance of 33mΩ at 2.5V gate drive, suitable for switching and power management applications in SOT23-3L surface mount package. Original PDF
    badge NCE3417
    		NCEPOWER P-Channel Enhancement Mode Power MOSFET NCE3417 with -12V drain-source voltage, -4.4A continuous drain current, RDS(ON) less than 56mΩ at VGS=-2.5V, available in SOT-23 surface mount package. Original PDF
    badge NCE3401
    		NCEPOWER NCE3401 is a -30V, -4.2A channel enhancement mode power MOSFET with 48mΩ typical RDS(ON) at VGS=-10V, suitable for load switch and PWM applications in surface mount SOT-23 package. Original PDF
    badge NCE3401E
    		NCEPOWER NCE3401E is a -30V, -4.4A channel enhancement mode power MOSFET with low RDS(ON) of less than 85mΩ at VGS=-2.5V, suitable for load switch and PWM applications in surface mount package. Original PDF
    badge NCE3400X
    		NCEPOWER NCE3400X is a channel enhancement mode power MOSFET with 30V drain-source voltage, 5.1A continuous drain current, and low on-resistance of less than 55mΩ at 2.5V gate voltage, suitable for switching applications and load management in surface mount design. Original PDF
    badge NCE3400A
    		NCEPOWER NCE3400A N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 40mΩ at 10V gate-source voltage, available in SOT-23 surface mount package. Original PDF
    badge NCE3404Y
    		NCEPOWER NCE3404Y is an N-channel enhancement mode power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 28mΩ at VGS=10V, suitable for load switch and PWM applications in a SOT-23-3L surface mount package. Original PDF
    badge NCE3400AY
    		NCEPOWER NCE3400AY is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 27mΩ at 10V gate-source voltage, suitable for switching applications and load management in surface mount design. Original PDF
    badge NCE3407A
    		NCEPOWER NCE3407A is a P-channel enhancement mode power MOSFET in SOT-23 package with -30V drain-source voltage, -4.3A continuous drain current, and low on-resistance of less than 52mΩ at VGS=-10V, suitable for load switch and PWM applications. Original PDF
    badge NCE3401AY
    		NCEPOWER P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of less than 120mΩ at -2.5V gate-source voltage, suitable for load switch and PWM applications. Original PDF
    badge NCE3402A
    		NCEPOWER NCE3402A N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 3A continuous drain current, and low on-resistance of less than 85mΩ at 2.5V gate voltage, suitable for battery protection and switching applications in SOT-23 package. Original PDF
    badge NCE3406N
    		NCEPOWER NCE3406N is a 30V N-channel enhancement mode MOSFET in SOT23-6L package, with RDS(ON) less than 50mΩ at VGS=2.5V, suitable for battery protection and switching applications. Original PDF
    badge NCE3400
    		NCEPOWER NCE3400 N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 35mΩ at 10V gate-source voltage, suitable for switching applications. Original PDF
    badge NCE3402
    		NCEPOWER NCE3402 N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 3A continuous drain current, RDS(ON) less than 75mΩ at VGS=2.5V, and low gate charge, suitable for battery protection and switching applications in SOT-23 package. Original PDF
    badge NCE3404
    		NCEPOWER NCE3404 is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 31mΩ at 10V gate-source voltage, suitable for load switch and PWM applications. Original PDF
    badge NCE3401BY
    		NCEPOWER P-Channel Enhancement Mode Power MOSFET NCE3401BY with -30V Drain-Source Voltage, -4.4A continuous drain current, and low on-resistance of 70mΩ at VGS=-2.5V, suitable for load switch and PWM applications in SOT-23-3L surface mount package. Original PDF
    badge NCE3401Y
    		NCEPOWER P-Channel Enhancement Mode Power MOSFET NCE3401Y with -30V drain-source voltage, -4.2A continuous drain current, and low RDS(ON) down to 55mΩ at VGS=-10V, suitable for load switch and PWM applications in SOT-23-3L package. Original PDF
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