NCE2301C
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET NCE2301C with -15V drain-source voltage, -2.6A continuous drain current, 80mΩ RDS(ON) at VGS=-4.5V, and low gate charge suitable for load switch and PWM applications in SOT-23 package. |
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NCE2301D
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -20V drain-source voltage, -2A continuous drain current, RDS(ON) less than 160mΩ at VGS=-2.5V, available in SOT-23 package. |
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NCE2301F
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -20V drain-source voltage, -2A continuous drain current, RDS(ON) less than 150mΩ at VGS=-2.5V, available in SOT-23 package. |
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NCE2309
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NCEPOWER
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NCE2309 is a -60V, -1.6A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 140 mΩ at VGS = -10V and low gate charge, suitable for load switch and PWM applications. |
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NCE2303
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NCEPOWER
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NCE2303 is a channel enhancement mode power MOSFET with -30V drain-source voltage, -2.0A continuous drain current, and low on-state resistance of 72mΩ typical at VGS=-10V, suitable for load switch and PWM applications in SOT-23 surface mount package. |
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NCE2302C
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NCEPOWER
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NCE2302C N-Channel Enhancement Mode MOSFET with 20V drain-source voltage, 3A continuous drain current, 80mΩ RDS(ON) at 2.5V VGS, and low gate charge, suitable for battery protection and switching applications in SOT-23 package. |
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NCE2301A
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET NCE2301A with -15V drain-source voltage, -3.0A continuous drain current, RDS(ON) less than 70mΩ at VGS=-2.5V, suitable for load switch and PWM applications in a surface mount SOT-23 package. |
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NCE2302B
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NCEPOWER
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NCE2302B is an N-Channel Enhancement Mode Power MOSFET with 20V drain-source voltage, 3.3A continuous drain current, and low on-resistance of less than 60mΩ at 2.5V gate drive, suitable for battery protection and switching applications. |
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NCE2301
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NCEPOWER
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NCE2301 is a channel enhancement mode power MOSFET with -20V drain-source voltage, -3A continuous drain current, and low on-resistance of less than 110 mΩ at -4.5V gate-source voltage, suitable for load switch and PWM applications. |
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NCE2304
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NCEPOWER
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NCE2304 is a Channel Enhancement Mode Power MOSFET in SOT-23 package, with 30V drain-source voltage, 3.6A continuous drain current, and low on-resistance of 73mOhm at 4.5V gate-source voltage. |
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NCE2301B
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -20V drain-source voltage, -2.6A continuous drain current, RDS(ON) less than 160mΩ at VGS=-2.5V, and low gate charge suitable for load switch and PWM applications in SOT-23 package. |
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NCE2302
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NCEPOWER
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20V, 4A NCE2302 trench MOSFET with RDS(ON) less than 59mΩ at VGS=2.5V, low gate charge, and operation down to 2.5V gate voltage, suitable for battery protection and switching applications in SOT-23 package. |
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NCE2305A
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET NCE2305A with -16V drain-source voltage, -4.1A continuous drain current, 60mΩ RDS(ON) at VGS=-2.5V, and low gate charge for load switch and PWM applications in SOT-23 package. |
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NCE2308X
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NCEPOWER
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NCE2308X is a channel enhancement mode power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-state resistance of 78mΩ at VGS=10V, suitable for battery protection and switching applications. |
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NCE2305
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET NCE2305 with -20V drain-source voltage, -4.1A continuous drain current, 45mΩ RDS(ON) at VGS=-4.5V, suitable for load switch and PWM applications in SOT-23 package. |
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NCE2301C
