CE 2826 Search Results

jrm a55

Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Contextual Info: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.

Contextual Info: GENNUM G F9 1 0 1 High Perform ance Multirate Digital Filter C O R P O R A T I O N PRELIMINARY DATA SHEET FEATURES DESCRIPTION • 40 MHz computation, max. I/P & O/P data rate The GF9101 is a hig h p e rfo rm a n ce m u ltira te d ig ita l filter • 12 tap cells

8086 interrupt vector table

Abstract: microprocessor 8086 Program relocation 8086 manual 8086 timing diagram 8282/8283 latch used for 8086 8086 microprocessor architecture diagram 8086 physical memory organization 8286/8287 amd 8086 manual of microprocessors 8086
Contextual Info: 8086 16-Bit M ic ro p ro ce sso r ¡A P X 8 6 Fam ily F IN A L DISTINCTIVE CHARACTERISTICS • • • • • • M U LTIBU S system interface Three speed options - 5 M H z for 8086 - 8 M H z for 8086-2 - 10M H z for 8086-1 Directly addresses up to 1 Mbyte of memory

32KX8

Contextual Info: P'S dt) Integrated Devi ce Technology» Inc. SUBSYSTEMS “FLEXI-PAK ” FAMILY 32K x 1 6/32K x 1 6 CMOS SRAM/EEPROM MODULE PRELIMINARY IDT7M7005 FEATURES: DESCRIPTION: • High-density CMOS module with SRAM and EEPROM memory on-board • M em ber of the S u b syste m s "F le xi-P a k” Fam ily of

Contextual Info: I GENNUM C O R P O R A T I 3^3S 7fl3 □□□MQbM 334 • M u ltm m r GF9101 High Performance Multirate Digital Filter O N DATA SHEET FEATURES DESCRIPTION • highly optimized & flexible architecture for multirate FIR filtering applications The GF9101 is a hig h p e rfo rm a n ce m u ltirate d ig ita l filte r

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 2826/4 Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 16 (19/29) AWG SPC 0.056 b) Insulation 0.012" Wall, Nom. PTFE

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 2826/2 Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 16 (19/29) AWG SPC 0.056 b) Insulation 0.012" Wall, Nom. PTFE

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 2826/3 Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (19/29) AWG SPC 0.056 b) Insulation 0.012" Wall, Nom. PTFE

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 2826 Construction Diameters (In) 1) Component 1 1 X 1 COND a) Conductor 16 (19/29) AWG SPC 0.056 b) Insulation 0.012" Wall, Nom. PTFE

ce 2826 ic

Contextual Info: O rdering num ber: EN 2826 Jo.2826 HPA100R NPN Triple Diffused Planar Silicon Composite Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • Highspeed tf typ = 100ns • High breakdown voltage (Vcbo = 1500V)

ce 2826 ic

Abstract: ce 2826 A100R HPA100R
Contextual Info: Ordering number : EN 2826 HP A 100R Very High-Definition Color Display, Horizontal Deflection Output Applications NPN Triple Diffused Planar Silicon Composite Transistor Features • Highspeed tf typ= 100ns • High breakdown voltage (V^ bo —1500V) • High-speed damper diode placed in one package (tfr —0.2ps max)

STK11C68-SF45I

Abstract: STK11C68-SF45 stk11c68sf45
Contextual Info: STK11C68 Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance ■ Automatic RECALL to SRAM on power up ■ Unlimited RECALL cycles

16C88

Contextual Info: 256-Kbit 32 K x 8 PowerStore nvSRAM 256-Kbit (32 K × 8) PowerStore nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Pin compatible with Industry Standard SRAMs ■ Automatic Nonvolatile STORE on power loss ■ Nonvolatile STORE under Software Control

Contextual Info: STK11C88 Features Functional Description • 25 ns and 45 ns Access Times ■ Pin Compatible with Industry Standard SRAMs ■ Software initiated STORE and RECALL ■ Automatic RECALL to SRAM on Power Up ■ Unlimited Read and Write endurance ■ Unlimited RECALL Cycles

Contextual Info: STK11C88 256 Kbit 32K x 8 SoftStore nvSRAM Functional Description • 25 ns and 45 ns Access Times ■ Pin Compatible with Industry Standard SRAMs ■ Software initiated STORE and RECALL ■ Automatic RECALL to SRAM on Power Up ■ Unlimited Read and Write endurance

Contextual Info: CY14V104LA CY14V104NA 4-Mbit 512 K x 8 / 256 K × 16 nvSRAM 4-Mbit (512 K × 8 / 256 K × 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 512 K × 8 (CY14V104LA) or 256 K × 16 (CY14V104NA) ■ Hands off automatic STORE on power-down with only a small

taa 723

Abstract: DS1230W STK16C88-3
Contextual Info: STK16C88-3 256 Kbit 32K x 8 AutoStore+ nvSRAM Functional Description • Fast 35 ns Read Access and R/W Cycle Time ■ Directly replaces Battery-backed SRAM Modules such as Dallas/Maxim DS1230W ■ Automatic Nonvolatile STORE on Power Loss ■ Nonvolatile STORE under Software Control

taa 723

Abstract: DS1230W STK16C88-3
Contextual Info: STK16C88-3 256 Kbit 32K x 8 AutoStore+ nvSRAM Functional Description • Fast 35 ns Read Access and R/W Cycle Time ■ Directly replaces Battery-backed SRAM Modules such as Dallas/Maxim DS1230W ■ Automatic Nonvolatile STORE on Power Loss ■ Nonvolatile STORE under Software Control

STK12C68-SF45I-TR

Contextual Info: STK12C68 64 Kbit 8 K x 8 AutoStore nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Hands off automatic STORE on power-down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by software, hardware, or AutoStore on power-down

Contextual Info: STK12C68 Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Hands off automatic STORE on power-down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by software, hardware, or AutoStore on power-down

Contextual Info: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)

Contextual Info: 256-Kbit 32 K x 8 PowerStore nvSRAM 256-Kbit (32 K × 8) PowerStore nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Pin compatible with Industry Standard SRAMs ■ Automatic Nonvolatile STORE on power loss ■ Nonvolatile STORE under Software Control

taa 723

Abstract: STK11C68
Contextual Info: STK11C68 64 Kbit 8K x 8 SoftStore nvSRAM Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance ■ Automatic RECALL to SRAM on power up

Contextual Info: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)