CE 2087 Search Results

CR123A

Abstract: CR14250SE panasonic 614 battery CR17335SE panasonic CR123A "eveready E9" CR14250 ey 2562 PC1604 Eveready E9
Contextual Info: R TI F I ED STEEL BATTERY HOLDERS 2 T Y CE 900 ISO Q I UAL RUGGED STEEL BATTERY HOLDERS INSULATOR TUBES SUPPLIED FOR 2-3-4 CELLS END TO END An established design that has gained wide acceptance for commercial and military applications. Batteries are held under constant spring tension

CR1220 holder smt

Abstract: panasonic cl2020 coin cell pc battery holders CR2032 toshiba sony CR2032 CR2450 toshiba CR2032 holder panasonic UL 2330 cr 3020 holder CR2032 button cell holder
Contextual Info: R TI F I ED COIN CELL PC BATTERY HOLDERS 2 T Y CE 900 ISO Q I UAL 12mm to 16mm & 1/3 “N” Sizes 20mm to 30mm Sizes SINGLE CELL HOLDER 3-VOLT DUAL CELL HOLDER (6-VOLT) Single and Dual “Printed Circuit” Cell Holders for Lithium Coin Cells. Designed for easy battery replacement. Will accommodate diameters

tr 512

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-1E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • GENERAL DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

FPT-44P-M08

Abstract: MBM30LV0064
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-3E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

527h

Abstract: FPT-44P-M08 MBM30LV0064
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-4E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

AA722

Abstract: FPT-44P-M08 MBM30LV0064
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-1E FLASH MEMORY M l l l 64M 8M X 8 BIT NAND-type MBM30LV0064

FPT-44P-M08

Abstract: MBM30LV0064 BGA-52P-M01
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-5E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

FPT-44P-M08

Abstract: MBM30LV0064
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-1E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • GENERAL DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages

diode MARKING CODE A9

Abstract: FPT-32P-M24 MBM29F004BC MBM29F004TC SA10
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-2E FLASH MEMORY CMOS 4 M 512 K x 8 BIT MBM29F004TC/004BC-70/-90 • DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (I) and 32-pin QFJ (PLCC) packages. This device is designed to

diode MARKING CODE A9

Abstract: MBM29F004BC MBM29F004TC SA10 FPT-32P-M24 SA1016K
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-3E FLASH MEMORY CMOS 4 M 512 K x 8 BIT MBM29F004TC/004BC-70/-90 • DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (1) and 32-pin QFJ (PLCC) packages. This device is designed

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-2E FLASH MEMORY CMOS 4 M 512 K x 8 BIT MBM29F004TC/004BC-70/-90 • DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (I) and 32-pin QFJ (PLCC) packages. This device is designed to

FPT-48P-M19

Abstract: FPT-48P-M20 SA10
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-1E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD-75/-90/MBM29PL160BD-75/-90 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

SA11

Abstract: SA12 SA13 SA14 MBM29LV080A SA10
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-4E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/-90/-12 • FEATURES • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements

MBM29LV080A

Abstract: SA10 SA11 SA12 SA13 SA14 SA15
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-5E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/90/12 • DESCRIPTION The MBM29LV080A is a 16 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes of data is divided into 32 sectors of 64 K bytes of flexible erase capability. The 8 bits of data will appear on

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

800TD

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.

FPT-48P-M19

Abstract: FPT-48P-M20 SA10
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-1E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD-75/-90/MBM29PL160BD-75/-90 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-5E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/90/12 • DESCRIPTION The MBM29LV080A is a 16 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes of data is divided into 32 sectors of 64 K bytes of flexible erase capability. The 8 bits of data will appear on

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-1E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD-75/-90/MBM29PL160BD-75/-90 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

MBM29LV080A

Abstract: SA10 SA11 SA12 SA13
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-3E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/-90/-12 • FEATURES • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements

FPT-48P-M19

Abstract: FPT-48P-M20 SA10
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-1E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD-75/-90/MBM29PL160BD-75/-90 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

AAH17

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20877-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 • FEATURES • Single 1.8 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands