CDMA REPEATER CIRCUIT Search Results

Contextual Info: Preliminary Data Sheet Part Number 856503 836.5 MHz SAW Filter Features • • • • • • • • • For AMPS, CDMA and TDMA repeater and booster applications Usable bandwidth 25 MHz High attenuation No impedance matching required for operation at 50 Ω

Contextual Info: Preliminary Data Sheet Part Number 856504 881.5 MHz SAW Filter Features • • • • • • • • • For AMPS, CDMA and TDMA repeater and booster applications Usable bandwidth 25 MHz High attenuation No impedance matching required for operation at 50 Ω

201805A

Abstract: Kamaya RMC Rogers 4350B SKY67130 201805 Rogers 4350B substrate
Contextual Info: DATA SHEET SKY67130-396LF: 0.7-2.7 GHz High Linearity Amplifier Driver Applications • LTE, CDMA, WCDMA, and TD-SCDMA cellular infrastructures • Linear amplifier systems that require high OIP3 with extremely low current • Ideal for 2.7 to 5.0 V WLAN driver PAs and cellular repeater

Contextual Info: DATA SHEET SKY67130-396LF: 0.7-2.7 GHz High Linearity Amplifier Driver Applications • LTE, CDMA, WCDMA, and TD-SCDMA cellular infrastructures • Linear amplifier systems that require high OIP3 with extremely low current • Ideal for 2.7 to 5.0 V WLAN driver PAs and cellular repeater

Contextual Info: Power Amplifier RFA1765-03 Product Features Application • Small size by using simple matching circuit board • Single Supply Voltage • Heat sink 99.9% copper, gold plated • High Productivity • Low Manufacturing Cost • GaAs HFET • PCS Repeater

Contextual Info: Power Amplifier RFA1855-03 Product Features Application • Small size by using simple matching circuit board • Single Supply Voltage • Heat sink 99.9% copper, gold plated • High Productivity • Low Manufacturing Cost • GaAs HFET • PCS Repeater

Contextual Info: Power Amplifier RFA0902-04 / RFA0947-04 Product Features Application • Small size by using simple matching circuit board • Single Supply Voltage • Heat sink 99.9% copper, gold plated • High Productivity • Low Manufacturing Cost • GaAs HFET • GSM Repeater

2100 WCDMA repeater circuit

Contextual Info: E-pHEMT Drive Amplifier CE2024 Product Features Application CP-16 package • GaAs E-pHEMT chip on board • High Efficiency and Linearity • High Output Power and Small Size • Single Supply Voltage 5v with Ceramic Substrate • No External Matching Circuit Needed

Contextual Info: Gain Block Amplifier GB0108 / GB0115 GB0408 / GB0415 Product Features Application • GaAs p-HEMT chip on board • No matching circuit needed • High IP3 • Surface Mount Hybrid Type & Reel Packing • Small Size • Alumina Substrate • Pb Free / RoHS Standard

transistor z9

Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Contextual Info: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package

Contextual Info: PCS Converter DR RFUR19-50 / RFDR19-51 RFDR19-55 / RFUR19-56 Product Features Application • Integrated Monolithic GaAs Converter Package Module • High Reliability • Lower Manufacturing Cost • Higher Productivity • Very Low Noise Figure & Low Distortion

Contextual Info: Gain Block Amplifier GB0108 / GB0115 GB0408 / GB0415 Product Features Application • GaAs p-HEMT chip on board • No matching circuit needed • High IP3 • Surface Mount Hybrid Type & Reel Packing • Small Size • Alumina Substrate • Pb Free / RoHS Standard

QPP-030

Contextual Info: QPP-030 35W, 824-849MHz Class AB Driver Stage Preliminary QuikPAC Module Data General description: Features: The QPP-030 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in cellular repeater systems. The power transistor is fabricated using Xemod’s

XD010-24S-D2F

Contextual Info: Preliminary Product Description The XD010-24S-D2F 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s latest, high performance LDMOS process. This unit operates from a single voltage and has internal temperature compensation of the bias voltage to ensure consistant

XD010-24S-D2FY

Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
Contextual Info: XD010-24S-D2F XD010-24S-D2FY Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s

Contextual Info: XD010-24S-D2F XD010-24S-D2FY Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s

GSM repeater circuit

Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
Contextual Info: XD010-24S-D2F 1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s

SDM-08120

Abstract: 08120 GAN temperature compensation AN067
Contextual Info: SDM-08120 Y SDM-08120(Y) 869 MHz to 894 MHz Class AB 130 W Power Amplifier Module 869 MHz to 894 MHz CLASS AB 130 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Product Description Features „ „ „ Available in RoHS Compliant

XD010-12S-D4F

Contextual Info: Preliminary Product Description The XD010-12S-D4F 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers for cellular base stations. The power transistors are fabricated using Sirenza’s latest, high

Contextual Info: XD010-12S-D4F XD010-12S-D4FY Product Description Sirenza Microdevices’ XD010-12S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of cellular base station power amplifiers. The power transistors are fabricated using

200 watt schematics power amp

Abstract: 80021 GSM repeater circuit Rogers 4350 datasheet XD010-12S-D4F AN060
Contextual Info: XD010-12S-D4F Product Description Sirenza Microdevices’ XD010-12S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of cellular base station power amplifiers. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune,

Contextual Info: XD010-12S-D4F XD010-12S-D4FY Product Description Sirenza Microdevices’ XD010-12S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of cellular base station power amplifiers. The power transistors are fabricated using

Rogers 4350 datasheet

Abstract: AN060 XD010-12S-D4F kemet f 881 GSM repeater power amplifier module LDMOS 15w
Contextual Info: XD010-12S-D4F XD010-12S-D4FY Product Description Sirenza Microdevices’ XD010-12S-D4FY is a 15 Watt, 2-Stage class A/AB LDMOS power amplifier module designed for use in the 869-894 MHz frequency band. The module is internally matched to 50 ohms and operates directly from 28V making system integration very simple. Internal

Contextual Info: Preliminary Product Description SDM-08060-B1F The SDM-08060-B1F 60W power module is an impedance matched, single stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a drop in, no tune, solution for high