CDM6116A Search Results

6116A

Abstract: CDM6116 CDM6116ACD/3
Contextual Info: HARRIS SEMI COND S E C T OR 37E D 43G2271 GQ2bSn T I HAS High-Reliability CM OS LSI Devices _ CDM6116AC/3 A7 -A6 -AS-A4 -A3 -A2-Al -AO — X/OI -1/02 -1/03 -vss — High-Reliability CM OS 2048-Word by 8-Bit LSI Static RAM Features: • Fully static operation

cdm6116a-3

Abstract: CDM6116A-2 RCA-CDM6116A CDM6116 cdm6116-a CDM6116A
Contextual Info: HARRIS SEMICOND SECTOR 37E D B 43DS571 D0S3b3'ì b B HAS Random-Access Memories R A M s . T -4 6 -2 3 -1 2 CDM6116A Product Preview 1 24 - V0D 2 23 - AS 22 - A9 3 4 21 - WE 5 20 - 0Ê 6 id - AIO 7 le - CE 8 17 - 1/08 9 16 - 1/07 10 15 -1/06

Contextual Info: High-Reliability CMOS LSI Devices CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: • F u lly s tatic operation • S ingle po w e r supply: 4.5 to 5.5 V ■ A ll inpu ts and ou tputs d ire c tly TTL com patible ■ 3-state ou tputs

6116A

Abstract: CDM6116
Contextual Info: G E SOLID STATE 17E D • 3ä75Gfil QQES027 =! Hlgh-Reliability CMOS LSI Devices - CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: ■ F u lly sta tic op eratio n ■ S ingle p o w e r sup ply: 4.5 to 5.5 V

ina28-terminal

Abstract: CDM6116 CDM6116AC 2CS-40498 CDM6116ACD/3
Contextual Info: High-Reliability CMOS LSI Devices CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: • F u lly s ta tic o p e ra tio n ■ S in g le p o w e r s u p p ly : 4.5 to 5.5 V ■ AH in p u ts a n d o u tp u ts d ire c tly TT L c o m p a tib le

MK4802

Abstract: BR6116-100 BR6116-45 MK48Z02 CDM6116A-9 F3528-35 24PIN CY7C128-45 CY7C128-55 CY7C128A-15
Contextual Info: - 16 K X nMOS 'f S t a t i c f RAM iî 2 0 4 8 x 8 « % it £t OC) TAAC aax (ns) TCAC (us) TOE max (ns) TOH min (ns) TOD max (ns) TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) A M ¿&&ÍEH m 2 4 P I N IDD aax (ibA)

BR6116-100

Abstract: inverter welder schematic BR6116-45 CDM6116A-3 CMD6116-1 24PIN CDM6116A-9 CMB6116-2 UPD446 CDM6116
Contextual Info: - 48 - 16 K m % it £ ÍS KSI OC A TMC max ns) KAC max (ns) 4 CMOS - , TOE max (ns) TOH din (ns) * y TOD max (ns) y S t a t i c RAM (2 0 4 8 x 8 ) n m TtfP T U S itin min (n¡;) (as) TDH rain (ns) TfD (ns) Tffl max (ns) V D D or V C C (V) 24P I N 6 II A

rom 1K x 8

Abstract: CDM6116 CDP1800 CDP1866 CDP1867 CDP1881C CDP1881CE CDP1882 CDP1882C CDP1882CE
Contextual Info: CDP1881C, CDP1882, CDP1882C S E M I C O N D U C T O R CMOS 6-Bit Latch and Decoder Memory Interfaces March 1997 Features Description • Performs Memory Address Latch and Decoder Functions Multiplexed or Non-Multiplexed The CDP1881C, CDP1882 and CDP1882C are CMOS 6-bit

rom 1K x 8

Abstract: CDM6116 cdp1833 CDP1866 CDP1882 CDP1882C CDP1882CE CDP1882CEX CDP1882D cdp1800series
Contextual Info: CDP1881C, CDP1882, CDP1882C CMOS 6-Bit Latch and Decoder Memory Interfaces March 1997 Features Description • Performs Memory Address Latch and Decoder Functions Multiplexed or Non-Multiplexed The CDP1881C, CDP1882 and CDP1882C are CMOS 6-bit memory latch and decoder circuits intended for use in