CDG 20260 Search Results

CDG 20260 Result Highlights (5)

Part	Manufacturer	Description	Download
61083-202602LF	Amphenol Communications Solutions	BergStak® 0.80mm Pitch, Mezzanine Connector, Vertical Header, Double Row, 200 Positions.	PDF
10120260-111-102LF	Amphenol Communications Solutions	10120260-111-102LF-INFINX PLUG 4PAIR 5COL W	PDF
61083-202600LF	Amphenol Communications Solutions	BergStak® 0.80mm Pitch, Mezzanine Connector, Vertical Header, Double Row, 200 Positions.	PDF
61082-202602LF	Amphenol Communications Solutions	BergStak® 0.80mm Pitch, Receptacle, Vertical, Double Row, 200 Positions.	PDF
61082-202609LF	Amphenol Communications Solutions	BergStak® 0.80mm Pitch, Receptacle, Vertical, Double Row, 200 Positions.	PDF

CDG 20260 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 125 Watts, 2110-2170 MHz PTF 102093* Description Key Features The PTF 102093 is a 125–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single and two carrier WCDMA operation in the 2110 to 2170 MHz band. Full gold metallization ensures excellent device lifetime and reliability.	Original	1-877-goldmos 1522-ptf	PDF
130-watt Abstract: CDG 20260 Contextual Info: PTF 102093 LDMOS RF Power Field Effect Transistor 130 Watts, 2110–2170 MHz Description Key Features The PTF 102093 is a 130–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single– and two–carrier WCDMA operation in the 2110 to 2170 MHz band. Full	Original	1522-ptf 130-watt cdg 20260	PDF
T35W Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,	OCR Scan	10db2p 10db4p 10db6p 180b6a +10t35w transistor kt 606a 65e9 transistor sr 6863 d 2sc965 cs9011 sr1k diode kt850 transistor st25a transistor 130001 8d	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 125 Watts, 2110-2170 MHz PTF 102093* Description Key Features The PTF 102093 is a 125–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single and two carrier WCDMA operation in the 2110 to 2170 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Original

1-877-goldmos 1522-ptf

PDF

130-watt

Abstract: CDG 20260
Contextual Info: PTF 102093 LDMOS RF Power Field Effect Transistor 130 Watts, 2110–2170 MHz Description Key Features The PTF 102093 is a 130–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single– and two–carrier WCDMA operation in the 2110 to 2170 MHz band. Full

Original

1522-ptf 130-watt cdg 20260

PDF

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

OCR Scan

10db2p 10db4p 10db6p 180b6a +10

PDF