CDG 20260 Search Results

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 125 Watts, 2110-2170 MHz PTF 102093* Description Key Features The PTF 102093 is a 125–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single and two carrier WCDMA operation in the 2110 to 2170 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

130-watt

Abstract: CDG 20260
Contextual Info: PTF 102093 LDMOS RF Power Field Effect Transistor 130 Watts, 2110–2170 MHz Description Key Features The PTF 102093 is a 130–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single– and two–carrier WCDMA operation in the 2110 to 2170 MHz band. Full

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,