CC 50 R 06 Search Results
CC 50 R 06 Price and Stock
YAGEO Corporation CC0603JRNPO9BN150Multilayer Ceramic Capacitors MLCC - SMD/SMT 50 V 15 pF C0G 0603 5% |
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CC0603JRNPO9BN150 | 95,227 |
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Vishay Intertechnologies RCC12067K50FKEAThick Film Resistors - SMD 7.5Kohms 1% 100ppm |
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RCC12067K50FKEA | 53,540 |
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Vishay Intertechnologies RCC12067R50FKEAThick Film Resistors - SMD 7.5ohms 1% 100ppm |
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RCC12067R50FKEA | 31,015 |
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Vishay Intertechnologies RCC1206150KFKEAThick Film Resistors - SMD 150Kohms 1% 100ppm |
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RCC1206150KFKEA | 23,478 |
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Vishay Intertechnologies RCC1206750RFKEAThick Film Resistors - SMD 750ohms 1% 100ppm |
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RCC1206750RFKEA | 21,312 |
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CC 50 R 06 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CC 05 / CC 06 TCE 50 / TCE 60 CONDENSATEURS CERAMIQUE MOULES CLASSE 1 MOLDED CERAMIC CAPACITORS CLASS 1 E12 E24 E48 E96 Capacité Capacitance 200 V CC 06 - CCR 06 TCE 60 - TCE 60 R Céramique classe 1 Chips multicouches moulé résine époxy CARACTERISTIQUES ELECTRIQUES |
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Contextual Info: TOSHIBA TC7SZ32AFE UND^R DEVELOPMENT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ32AFE 2 INPUT OR GATE FEATURES • High Output Drive : ±24mA (Typ.) • Super High Speed Operation : tpo 2.4 ns (Typ.) @ V Cc = 3 V @ V Cc = 5 V, 50 pF |
OCR Scan |
TC7SZ32AFE TC74LCX | |
Contextual Info: TOSHIBA TC7SZ00AFE UND^R DEVELOPMENT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ00AFE 2 INPUT NAND GATE FEATURES • High Output Drive : ±24mA (Typ.) • Super High Speed Operation : tpo 2.4 ns (Typ.) @ V Cc = 3 V @ V Cc = 5 V, 50 pF |
OCR Scan |
TC7SZ00AFE TC74LCX | |
Contextual Info: TOSHIBA TC7SZ04AFE fuND^R DEVELOPMENT T0SHIBA CM0S D|GITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ04AFE INVERTER FEATURES • ±24mA Typ.) @ V CC = 3 V High Output Drive • Super High Speed Operation tpD 2.4 ns (Typ.) @ V CC = 5 V, 50 pF Operation Voltage Range |
OCR Scan |
TC7SZ04AFE TC74LCX | |
Contextual Info: TOSHIBA TC7SZ08AFE fuND^R DEVELOPMENT T0SHIBA CM0S D|GITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ08AFE 2 INPUT AND GATE FEATURES • High Output Drive : ±24mA Typ.) @ V CC = 3 V • Super High Speed Operation : tpo 2.7 ns (Typ.) @ V CC = 5 V, 50 pF |
OCR Scan |
TC7SZ08AFE TC74LCX | |
Contextual Info: TOSHIBA TC7SZ00AFE fuND^R DEVELOPMENT T0SHIBA CM0S D|GITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ00AFE 2 INPUT NAND GATE FEATURES • High Output Drive : ±24mA Typ.) @ V CC = 3 V • Super High Speed Operation : tpo 2.4 ns (Typ.) @ V CC = 5 V, 50 pF |
OCR Scan |
TC7SZ00AFE TC74LCX | |
Contextual Info: TOSHIBA TC7SZ32AFE fuND^R DEVELOPMENT T0SHIBA CM0S D|GITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ32AFE 2 INPUT OR GATE FEATURES • High Output Drive : ±24mA Typ.) @ V CC = 3 V • Super High Speed Operation : tpo 2.4 ns (Typ.) @ V CC = 5 V, 50 pF |
OCR Scan |
TC7SZ32AFE TC74LCX | |
Contextual Info: TOSHIBA TC7SZ02AFE fuND^R DEVELOPMENT T0SHIBA CM0S D|GITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ02AFE 2 INPUT NOR GATE FEATURES • High Output Drive : ±24mA Typ.) @ V CC = 3 V • Super High Speed Operation : tpo 2.4 ns (Typ.) @ V CC = 5 V, 50 pF |
OCR Scan |
TC7SZ02AFE TC74LCX | |
Contextual Info: DALLAS DS2064 8K x 8 Static RAM s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT • Standby current 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at tA = 25°C Vc c = 5.5V 1 |iA max at t* = 60°C V cc = 5.5V • Full operation for V cc = 4-5V to 5.5V • Data Retention Voltage = 5.5V to 2.0V |
OCR Scan |
DS2064 28-PIN 2L1413D | |
3055 smd
Abstract: MC10H181 PACKAGE DIMENSIONS CASE 751-03
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OCR Scan |
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tyco 17105-3608
Abstract: 17105-3608 42802 42802-1 a 315j pa 17105-3608
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OCR Scan |
06APR06 030-I 31MAR2000 tyco 17105-3608 17105-3608 42802 42802-1 a 315j pa 17105-3608 | |
N4211
Abstract: ECR-05-017287
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OCR Scan |
06APR06 030-I 31MAR2000 N4211 ECR-05-017287 | |
Contextual Info: 2 7 no © i m CD ''T no in . oo y y i E - 1 } )\- D <r cc O 77.8 6 1.8 45.8 37.8 29.8 2 1.8 7 1.2 55.2 39.2 3 1.2 23.2 15.2 53493- 187 53493- 147 53493-107 53493-087 53493-067 53493-047 36.2 28.2 20.2 50 42 34 26 D C B A MATERIAL NO. t in M A T E R IA L |
OCR Scan |
SD-53493-003 MXJ-32 SD-53493-003 | |
OC-254Contextual Info: FEATURES & J CC DC - 450 MHz 50i2 or 7 5 Q Terminations 20 Watts CW MODEL NO 100C0612 SP3T RELAY Non-Reflective SP3T SMA Connectors J2 J1 J3 50 a .X X .X X X O • .02 ■ .010 TYPICAL PERFORMANCE ft 1.8 r 0.8 GUARANTEED PERFORMANCE A T 25“ C 120 PARAMETER |
OCR Scan |
100C0612 OC-254) OC-254 | |
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Contextual Info: _Technical Data CD54/74AC151 CD54/74ACT151 Advance Information 8-Input Multiplexer Type Features: • Buffered inputs m Typical propagation delay: 6 ns @ l/cc - 5 V, Ta = 25° C, CL = 50 pF vCc = '« GN D = 8 F U N C T IO N A L D lA G R A M '9 2 c 5 ' 3S43l |
OCR Scan |
CD54/74AC151 CD54/74ACT151 3S43l CD54/74ACT151 CD74AC151 CD74ACT151 16lead | |
crcw FRT1
Abstract: NSC87108 CRCW VJ1206Y474JXXMT 685X CRCW-1206-7R00-F-RT1 293D
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OCR Scan |
TFDS6500 NSC87108 CRCW-1206-50R00-F-RT1 CRCW-1206-7R00-F-RT1 VJ1206Y474JXXMT 9016B2T PC87338VLJ crcw FRT1 NSC87108 CRCW 685X 293D | |
RESISTOR NY4 100K
Abstract: RC3T resistor "color code" VISHAY BC 150 RC21U marking K4 4N rs58y resistor color code
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MIL-R-39017 RESISTOR NY4 100K RC3T resistor "color code" VISHAY BC 150 RC21U marking K4 4N rs58y resistor color code | |
MIL-S-3950
Abstract: 2TL1-50
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OCR Scan |
BI94432 2TL1-50 MIL-S-3950 MIL-S-3950 | |
Contextual Info: 2 7 LD OT LD .O O <J E D □ 0-5^^o CAMBER s 0.5 MAX. , J - J ' / h N O . H NO." 1 D m CIRCUIT NO.: I ONLY. 43.56 39.6 35.64 3 1.68 27.72 23.76 19.8 15.84 1.88 7.92 3.96 B <r cc O < * CJ m JtC x T N O . CAVITY NO. o o o CJ cE: i— Ld 09- 50 > - 12 i I |
OCR Scan |
MXJ-32 | |
5566 molex
Abstract: 24B2
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OCR Scan |
SDA-5566-N 5566 molex 24B2 | |
Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SM-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX S 3 { 3.2 * 5.45 10V D R IV E V d s s . 60V rDS ON (MAX). 30m i2 |
OCR Scan |
FS30SM-06 | |
Contextual Info: MITSUBISHI Neh POWER MOSFET FS30KM-06 HIGH-SPEED SWITCHING USE FS30KM-06 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 - 2 .8 1 0 .2 r 10V D R IV E V d s s . 60V rDS ON (MAX). 30m i2 |
OCR Scan |
FS30KM-06 30mi2 O-220FN | |
Contextual Info: MITSUBISHI Neh POWER MOSFET FS50VS-06 HIGH-SPEED SWITCHING USE FS50VS-06 OUTLINE DRAWING I q J w e Q w r 6 +i CO C\i q w e r 10V DRIVE V d s s . 60V Dimensions in mm q o - GATE |
OCR Scan |
FS50VS-06 O-220S 571Q-22 | |
Contextual Info: MITSUBISHI Neh POWER MOSFET FS50UM-06 HIGH-SPEED SWITCHING USE FS50UM-06 OUTLINE DRAWING Dimensions in mm 4.5 1.3 ILI U LU qwe q w e r 10V DRIVE V d s s . 60V q o- GATE DRAIN SOURCE |
OCR Scan |
FS50UM-06 O-220 |