CBX SMD CODE Search Results

hyb39s16

Abstract: marking smd wmf CAY smd marking code
Contextual Info: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Single Pulsed RAS Interface • Fully Synchronous to Positive Clock Edge

P-TSOPII-44

Abstract: CAZ MARKING AZ2 marking
Contextual Info: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge •

P-TSOPII-54

Abstract: caz smd PC133 registered reference design
Contextual Info: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10

39S16802AT-10

Abstract: Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T
Contextual Info: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Multiple Burst Read with Single Write Operation

cbx smd code

Abstract: SMD marking code ax2 PC100-222 PC133-333 P-TSOPII-54 smd marking T22
Contextual Info: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge

P-TSOPII-54

Abstract: Q67100-Q1838 Q67100-Q2781
Contextual Info: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns

SMD MARKING T20

Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
Contextual Info: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge

39S64160BT-8

Abstract: SMD MARKING T5 application of sequential circuit CAZ MARKING marking RBY
Contextual Info: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns

CAY smd marking code

Abstract: smd marking T22 cbx smd code smd CAY 39S256800T-8 SMD MARKING T20 SMD MARKING T5 P-TSOPII-54 PC100-222-620 PC100-323-620
Contextual Info: HYB 39S256400/800/160T 256 MBit Synchronous DRAM Preliminary Information • High Performance: • • • • -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns • Multiple Burst Read with Single Write Operation

SMD marking code ax2

Abstract: HYB 39S64800AT-8 P-TSOPII-54 39S64800AT-8 39S64160AT-8
Contextual Info: HYB39S6440x/80x/16xAT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Single Pulsed RAS Interface • Fully Synchronous to Positive Clock Edge

smd marking code bs

Abstract: TSOP RECEIVER 39S64160BT-8 MARKING AX5 sdram 4 bank 4096 16 smd code marking t6 P-TSOPII-54
Contextual Info: HYB39S64400/800/160BT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: 7.5 -8 -10 Units fCKmax. 133 125 100 MHz tCK3 7.5 8 10 ns tAC3 5.4 6 7 ns tCK2 10 10 15 ns tAC2 6 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

39S256160T

Abstract: PC100-322-620 MARKING AX5 SMD MARKING T20
Contextual Info: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10

P-TSOPII-54

Abstract: 39s64160at-8
Contextual Info: HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: -7 -7.5 -8 Units • Automatic and Controlled Precharge Command fCK 143 133 125 MHz • Data Mask for Read/Write Control (x4, x8)

SIEMENS SCR BST

Abstract: SIEMENS BST 68 cke scr
Contextual Info: Overview HYB 39S13620TQ-6/-7/-8 • Special Mode Registers • High Performance: -6 -7 -7 -8 Units fCK 166 125 125 125 MHz latency 3 2 3 3 − tCK3 6 8 7 8 ns tAC3 5.5 5.5 5.5 6 ns • Two color registers • Burst Read with Single Write Operation • Block Write and Write-per-Bit Capability

smd CA-Y

Abstract: P-TSOPII-54 smd CAY
Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCK 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns

Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Information • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125

tube az1

Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
Contextual Info: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10

PC100-222-620

Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8

marking code EY SMD

Abstract: PC100-222-620 P-TSOPII-54
Contextual Info: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN

smd marking T22

Abstract: smd transistor marking ba 128M-BIT P-TSOPII-54 P-TSOP-54 PC133 registered reference design 128-MBIT
Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: -7 -7.5 -8 Units • Automatic and Controlled Precharge Command fCK 143 133 125 MHz • Data Mask for Read/Write Control (x4, x8)

P-TSOPII-54

Contextual Info: HYB 39S128400/800/160DT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM Preliminary Target Specification 10.01 High Performance: • Multiple Burst Read with Single Write Operation -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz • Automatic and Controlled Precharge

smd marking T22

Abstract: PC133-222-520
Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single Write Operation -7 -7.5 -8 Units fCK 143 133 125 MHz • Automatic and Controlled Precharge Command tCK3 7 7.5 8 ns • Data Mask for Read/Write Control (x4, x8)

P-TSOPII-54

Abstract: PC133 registered reference design
Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single Write Operation -7 -7.5 -8 Units fCK 143 133 125 MHz • Automatic and Controlled Precharge Command tCK3 7 7.5 8 ns • Data Mask for Read/Write Control (x4, x8)