CBS05F30 Search Results
CBS05F30 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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CBS05F30 |
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CBS05F30 - DIODE 0.5 A, SILICON, SIGNAL DIODE, CST2B, 2 PIN, Signal Diode | Original | 125.69KB | 5 | ||
CBS05F30 |
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Japanese - Diodes | Original | 223.69KB | 5 | ||
CBS05F30 |
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Diodes | Original | 125.68KB | 5 | ||
CBS05F30(TPL3) |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.5A CST2B | Original | 5 |
CBS05F30 Price and Stock
Toshiba America Electronic Components CBS05F30,L3FDIODE SCHOTTKY 30V 500MA CST2B |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CBS05F30,L3F | Digi-Reel | 4,481 | 1 |
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CBS05F30,L3F | Reel | 12 Weeks | 10,000 |
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CBS05F30,L3F | 3,948 |
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CBS05F30,L3F | Reel | 10,000 |
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Toshiba America Electronic Components CBS05F30(TPL3)Schottky Diodes & Rectifiers Small Sig Schottky 0.5A 30V 0.45Vf |
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CBS05F30(TPL3) |
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Toshiba America Electronic Components CBS05F30,L3F(BCBS05F30,L3F(B |
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CBS05F30,L3F(B | 10,000 | 468 |
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CBS05F30,L3F(B | 8,062 |
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Toshiba America Electronic Components CBS05F30,L3F(TSmall Signal Schottky Diode, 30V/Cst2B; Diode Configuration:Single; Repetitive Peak Reverse Voltage:30V; Average Forward Current:500Ma; Forward Voltage Max:450Mv; Forward Surge Current:3A; Operating Temperature Max:125°C Rohs Compliant: Yes |Toshiba CBS05F30,L3F(T |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CBS05F30,L3F(T | Cut Tape | 6,900 | 1 |
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CBS05F30 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CBS05F30 ショットキバリアダイオード シリコンエピタキシャル形 CBS05F30 1. 用途 • 高速スイッチング用 2. 特長 1 順電圧が小さい。: VF(3) = 0.38 V (標準) (2) 低背小型パッケージ。: 厚さ = 0.40mm (最大) |
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CBS05F30 | |
Contextual Info: CBS05F30 Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode |
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CBS05F30 | |
Contextual Info: CBS05F30 東芝ダイオード エピタキシャルショットキバリア形 CBS05F30 ○ 高速スイッチング用 単位: mm 目 記 号 定 格 単位 1.2±0.05 0.8±0.05 逆 平 電 均 整 流 電 圧 VR 30 流 IO 500* サ ー ジ 電 流 1 0 m s ) |
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CBS05F30 | |
Contextual Info: CBS05F30 Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode |
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CBS05F30 | |
marking code 72Contextual Info: CBS05F30 Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode |
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CBS05F30 marking code 72 | |
Contextual Info: CBS05F30 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type CBS05F30 High-Speed Switching Application Unit: mm Rating Unit Reverse voltage VR 30 V Average forward current IO 500 * mA Surge current 10ms IFSM 3 A Junction temperature Tj 125 °C Tstg −55 to 125 |
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CBS05F30 | |
SSM3J307T
Abstract: SSM3J328R SSM3J334R
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200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R | |
CMZB220
Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
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SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B | |
smd diode Lz zener
Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
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SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B |