CB33 P Search Results

42R2

Abstract: diode 42R2 BYW series FR56A FR57A 62R2 fr56 Thomson-CSF rectifier 22R2 FR58A
Contextual Info: o rectifier diodes < 100 A diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

Contextual Info: I S^C D I 7 CÌ2<:1237 aQD5131 T S G S-THOMSON T 3. O 59C 02131 tH Ù M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS D ' Y - 6J- i l B Y T 12-200 — 400, R F A S T R E C O V E R Y R E C TIFIER REDRESSEUR R A PID E ADVANCE INFORMATION .

FR55A

Abstract: G6010 BYW88-100R
Contextual Info: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 12A* I TcaM - 125°C G 510, (H) G 1010, (RI/FR55A G2010, (RJ/FR56A G3010, (R) G4010, (RI/FR57A G5010, (R) G6010, (R1/FR58A G8010, (R1/FR59 G 1110, (R1/FR61

46R2S

Abstract: r2s30 FR76 BYW 26 Thomson-CSF plastic diodes FR79 36R2S diodes byw CASA10 R83HZ
Contextual Info: controlled avalanche rectifier diodes diodes de redressement à avalanche contrôlée Types 3A •o VRRM A (V) / Tam|) = 80 °C BYW BYW BYW BYW 18- 400 18- 600 18- 800 18-1000 3 Tj = 150°C 400 600 800 1000 PRSM vF ^ V(BR)R @ Ir = 100mA 10 fiS JT. (V) (V)

Contextual Info: ñemeo ALUMINUM ELECTROLYTIC SURFACE MOUNT CAPACITORS Type CB 5°C FEATURES NMCOS009 • Low cost, high reliability surface mount construction • Life: 1000 hours at +85°C • Capacitance range: 0.1 nf to 220 ¿if • Voltage range: 4 volts to 50 volts •

CB22/16S

Contextual Info: ñemeo ALUMINUM ELECTROLYTIC SURFACE MOUNT CAPACITORS Type CB +85°C FEATURES • Low cost, high reliability surface mount construction NMCOS006 • Life: 1000 hours at +85°C • Capacitance range: 0.1 iif to 220 ^f • Voltage range: 4 volts to 50 volts

HDR 1X6

Abstract: hdr1x6
Contextual Info: RFDA0026 RFDA0026Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 700MHz TO 1035MHz, 6-BIT 0.5dB LSB CONTROL Max Gain=32dB at 900MHz RF_IN 6 GND 7  High OIP3/P1dB=+40/23dBm  Single +5V Supply GND GND GND GND GND NC

hdr1x6

Contextual Info: RFDA0026 RFDA0026Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 700MHz TO 1035MHz, 6-BIT 0.5dB LSB CONTROL GND 7 8 Gain Control Range=31.5dB 0.5dB Step Size  High OIP3/P1dB=+40/23dBm  Single +5V Supply GND GND

Contextual Info: RFDA0026 RFDA0026Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 700MHz TO 1035MHz, 6-BIT 0.5dB LSB CONTROL Max Gain=32dB at 900MHz  Gain Control Range=31.5dB 0.5dB Step Size  High OIP3/P1dB=+40/23dBm  Single +5V Supply

Lpp 97

Abstract: transil 428 54-135
Contextual Info: transient voltage suppressors «TRANSIL» íí diodes de protection «TRANSIL» THOMSON-CSF 'R M @ V r m t»A 2,5 KW G LT G LT G LT G LT / 12 24 47 120 V) m in 12 24 47 120 m ax nom 350 W 1 ms expo. 5 5 5 5 @ V(BR>* (V) U nidirectional typ es / 15 30 60

Contextual Info: G S-THQ M SQ N S ÌC D | OGOaOET fl 7 ^ 2 3 7 V THOMSON-CSF C H IP S u ltra-fast recovery rectifier chips pastilles de diodes de redressement ultra-rapide Types >0 A v R flU Vf # ' f = «o m u. *FSU 10 IT* (V) (A) 'R 'V fW M 25*C max. (jlA) V r* OifW lPOOÎ

DS111120

Contextual Info: RFDA0026 RFDA0026Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 700MHz TO 1035MHz, 6-BIT 0.5dB LSB CONTROL Max Gain=32dB at 900MHz RF_IN 6 GND 7  High OIP3/P1dB=+40/23dBm  Single +5V Supply GND GND GND GND GND NC

Contextual Info: s î c S G S-THOMSON D 59C 0 2 1 6 7 ' II D 0 0 2 ib ? D 7 ^ 0 3 '2 * B Y T 6 0 - 2 0 0 — 4 0 0 , R F A S T R E C O V E R Y R E C T IF IE R R E D R E S S E U R R A P ID E ADVANCE INFORMATION V R R M 200 to 400 V ' f (AV) *0 A at Tcaa* 80 C tffi < SO m

CB-257

Abstract: BYW 90 1N1581 diodes byw 214200 byw 150 D027A 1N1341B 200A2 1n1342
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types >0 VRRM A (V) 1HOMSON-CSF • fs m 10 ms vF (A) (V) / if max Tj = 175°C 3 A / Tam b = 100°C 1N 1N 1N 1N 1N 1N 5401 5402 5404 5406 5407 5407 S 3 1N 1N 1N 1N GS 5624 5625 5626 5627 5628 3 BVW17- 100

ca33p

Abstract: ca30p CB33P cb50p cd33p CA50P cd25p CB35P cd50p CA27P
Contextual Info: AIC1734 300mA Low Dropout Linear Regulator FEATURES DESCRIPTION Low Dropout Voltage of 470mV at 300mA Output Current 3.0V Output Version . The AIC1734 is a 3-pin low dropout linear Guaranteed 300mA Output Current. AIC1734 include zero base current loss, very

Contextual Info: SÌC D I 7 ^ 2 3 7 -THOMSON _ 59C 02065 O THOMSON-CSF DGDEGbS 1 _ D*T' e 3 ' / 7 ~ 1 N 3 8 8 9 ^ 1 N 3 8 9 3 , R B Y X 6 2 6 0 0 (R) DIVISION SEMICONDUCTEURS DISCRETS , SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY

gz zener

Abstract: 39A zener diode RZ33A 6AR6 GZ33AR GZ47A GZ27AR 34 GZ gz 77 diodes 415 39a
Contextual Info: y zener diodes diodes zener THOMSON-CSF Type» Vc min 10 W / Tease GZ 6A, GZ 8A, GZ 10A, GZ 12A, GZ 15A, GZ 18A, GZ 22A, GZ 27A, GZ 33A, GZ39A, GZ 47A, GZ 56A, GZ68A, GZ 82A, GZ 10B, GZ 12B, GZ 15B, GZ 18B, R (R) (R) (R) (R) (R) (R) (R) (R) (R) (R) (R) (R)

byx 61 400

Abstract: byx 33 400 BYX61-50 Thomson-CSF rectifier GR606 diodes byt
Contextual Info: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A Types 6 A / Tcase = 85°C ESM ESM ESM ESM ESM 255-50 R 255-100 R 255-200 R 255-300 R 255-400 R 10 20 40 60 80 zzzzz 765-10 765-20 765-40 765-60 765-80 R (R) (R) (R) (R) 1N 3889, (R)

1N3001

Abstract: 1N3011 1N3012 BR48 1n3015 BR203 1N 2979 1N3014B DIODES 1n3001
Contextual Info: o zener diodes diodes zener Types VZ T/IZT min Tease = 1N 2970 B, R 1N 2971 B,(R) 1N 2972 B,(R) 1N 2973 B,(R) 1N 2974 B,(R) 1N 2975 B,(R) 1N 2976 B,(R) 1N 2977 B,(R) 1N 2979 B,(R) 1N 2980 B,(R) 1N 2982 B,(R) 1N 2984 B,(R) 1N 2985 B,(R) 1N 2986 B,(R) 1N 2988 B,(R)

BYT 45 J

Abstract: stc 8000 h
Contextual Info: 1 5^0 D I 7TETE37 0002101 3 S G S-THOMSON Q 59C 02181 T H O M S O N -C S F B 0 7 ^ 0 3 “/7 Y T 6 5 . 6 5 B DIVISION SEMICONDUCTEURS DISCRETS SUPERSW ITCH 6 _ ^ 1 , C R HIGH VOLTAGE FAST RECOVERY RECTIFIERS R E D R ESSEU R S RA PID ES H AU TE TENSION HIGH VOLTAGE

esm diodes

Abstract: ESM 470 esm 30 450 v ESM 650 esm 112-39 esm 200 cb33 p 112220 112180 esm 112 390
Contextual Info: clamping zener diodes diodes zener ecreteuses THOMSON-CSF V BR * 'RM @ V rivi Unidirectional types 1mA) 4 KW ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM 111-15 111-18 111-22 111-27 111-33 111-39 111-47 111-56 111-68 111-82

Contextual Info: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T

ca33g

Abstract: CB33G CA30G CD38G CB50G CA27G CA50G CA35G CB35G ca30p
Contextual Info: AIC1734 300mA Low Dropout Linear Regulator FEATURES DESCRIPTION Low Dropout Voltage of 470mV at 300mA Output Current 3.0V Output Version . The AIC1734 is a 3-pin low dropout linear Guaranteed 300mA Output Current. AIC1734 include zero base current loss, very

Contextual Info: s G S-THOMSON S'iC D 1I 7 ^ 5 3 7 O T-0¿-/Í d 59C 0 2 1 3 6 T H O M S O N -C S F QGGEiat, T BYT 12-600-* 800, R DIVISION SEMICONDUCTEURS DISCRETS FAST RECOVERY RECTIFIER REDRESSEUR RAPIDE ADVANCE INFORMATION VrrM 600 — 800 V lF(AV) 12 A at Tease 90°C